| Vol. 3, No. 1, August 2006- Art. 8 |
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| An Above IC MEMS RF Switch |
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by
Daniel Saias, Philippe Robert, Samuel Boret, Christophe Billard,
Guillaume Bouche, Didier Belot, and Pascal Ancey, STMicroelectronics
Copyright
Copyright © IEEE, 2003. Reprinted from An Above IC
MEMS RF Switch, by Daniel Saias, Philippe Robert, Samuel Boret,
Christophe Billard, Guillaume Bouche, Didier Belot, and Pascal
Ancey, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO.
12, DECEMBER 2003, pp 2318 - 2324 |
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Abstract
Addressing reconfiguration of radio frequency (RF) systems
might require high performance integrated RF switching capabilities.
In this regard, a particular design experience of an integrated
circuit (IC) monolithically integrated micro electro mechanical
system (MEMS) ohmic switch is reported here. Applications at 2-GHz
have been targeted. The MEMS device was processed on top of a
0.25 µm standard BiCMOS wafer including the switch IC driver.
An extensive RF characterization has been made. At 2-GHz, the
switch exhibits a 0.18 dB insertion loss and a 57 dB isolation
level. This realization opens the way to further designs of reconfigurable
architectures for multiband and multistandard mobile terminals.
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