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Fast-recovery built-in body diode from STMicroelectronics sharpens high-voltage power MOSFETs for ZVS phase-shift converters

Short recovery time joins benefits of low on-resistance and fast switching rate

Geneva, December 10, 2001 - STMicroelectronics (NYSE: STM) has introduced the first three members of its FDmesh series of high-voltage N-channel power MOSFETs. The new series adds an exceptionally short body-diode recovery time to the advantages of low on-resistance (RDS(on)) and fast switching rate already achieved by the company's existing MDmesh MOSFET technology.

The three high-voltage power MOSFETs are the 500V, 45A STW45NM50FD with an RDS(on) of 90 mohm (typical); the 20A, 500V STW20NM50FD with an RDS(on) of 220 mohm (typical): and the 11A, 600V STP11NM60FD with an RDS(on) of 400 mohm (typical). Their mix of superior specifications recommends the MOSFETs for use in high-efficiency bridge converters, and in particular zero-voltage phase-shift (ZVS) switching topologies used for high-end power supplies found in telecommunications and welding equipment.

The FDmesh family builds on STMicroelectronics' revolutionary MDmesh (Multiple Drain mesh) technology, which combines a vertical drain structure with the company's well-established Mesh Overlay™ layout. The main contribution of FDmesh to MDmesh's low on-resistance and minimal gate charge (Qg)- is the addition of an intrinsic fast-recovery body (source-to-drain) diode and a dv/dt capability of 20V/ns at 400A/µs. The diode serves to minimize the MOSFETs reverse recovery charge (Qrr) and, therefore, reverse recovery time (trr).

Respective typical values of trr, Qrr, and Qg for the three MOSFETs are 245ns, 2.2µC, and 92nC for the STW45NM50FD; 175ns, 1.2µC and 38nC for STW20NM50FD; and 194ns, 1.1µC, and 28nC for the STP11NM60FD. In addition, excellent avalanche characteristics contribute to this MOSFET family's rugged, high performance.

The STW45NM50FD comes in a TO-247 package. The STP20NM50FD (also available in TO-247) and STP11NM60FD each come in a TO-220 package, with D2PAK and I2PAK package options available. Samples are already available with volume production scheduled within 2001.

About STMicroelectronics
STMicroelectronics is the world's third largest independent semiconductor company. The Company shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. The Company designs, develops, manufactures and markets a broad range of semiconductor integrated circuits (ICs) and discrete devices used in a wide variety of microelectronic applications, including telecommunications systems, computer systems, consumer products, automotive products and industrial automation and control systems. In 2000, the Company's net revenues were $7,813.2 million and net earnings were $1,452.1 million. Further information on ST can be found at www.st.com


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