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SuperFREDMesh™ Technology from STMicroelectronics Enhances MOSFET Portfolio |
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 Geneva,
September 3, 2004 - STMicroelectronics (NYSE: STM) has introduced
an n-channel MOSFET for use in HID lamps, high-end ballasts and switch-mode
power supplies that use zero-voltage and zero-current transitions.The STx9NK60ZD is the first device built using a new high-voltage process technology known as SuperFREDMesh™. Thanks to this advanced technology that realizes a new carrier lifetime control process on the ST's basic High Voltage SuperMESH™ series, the device shows, along with optimal dynamic performance, optimized body diode reverse-recovery time (trr) and very soft recovery. All these features help reduce switching losses. Devices built using the SuperFREDMesh technology also benefit from reduced on-resistance, Zener gate protection, high dv/dt capability and cost competitiveness. The part handles 600V, a drain current of up to 7A and offers a typical RDS(on) of 0.85Ohm. The STF9NK60ZD handles up to 30W, while the STB9NK60ZD and STP9NK60ZD each handle up to 125W. The parts are100% avalanche tested and are available in TO-220, TO-220FP and D2PAK packages. US pricing is 0.80$US in quantities of 100k pieces. Further information is available at www.st.com/pmos About STMicroelectronics STMicroelectronics is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2003, the Company's net revenues were $7.24 billion and net earnings were $253 million. Further information on ST can be found at www.st.com. |
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