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Rad-Hard Power MOSFETs
A new high reliability series for space applications

Electronic devices used in satellites and space stations are constantly showered by cosmic rays. Extreme damage to semiconductors and the soft/hard errors caused by the high density of electron-hole pairs after the passage of a highly energetic particle can occur in space.

Irradiation facilities for the radiation tolerance testing for space, which cover different radiation qualities, such as gamma-rays, electron beams and ion beams are

Total Ionizing Dose (TID) - rays 100krad (Si)
Single Event Effect (SEE) heavy ions irradiation
LET = 37 E= 250 MeV Bromine tolerance target
Rad-Hard


Rad-hard Power MOSFETs

ST is expanding its rad-hard portfolio with the introduction of:

N-Channel 60V, 100V, 200V and 250V, devices
P-Channel 60V, 100V and 200V devices.

These devices are radiation hardened and have high reliability characteristics appropriate for satellite based applications. The new devices designed for DC-DC converters, motor control inverters, channel amplifiers, electronic power conditioners in satellites and other high reliability applications are fully isolated and hermetically packaged. Devices are available in surfacemount SMD-0.5, and the TO-39 for smaller die sizes, as well as in the TO-257AA and the TO-254AA for larger die sizes.

Rad-hard Technology Features

An accurate prediction of the device’s lifetime and reliability in space is mandatory. In this field, techniques for the evaluation of radiation resistance of electronic devices have been developed.

Gate oxide process optimized to reduce the Total Ionizing Dose (TID) susceptibility
Drain engineering structure to improve the Single Event Burnout (SEB) / Single Event Gate Rupture (SEGR) tolerance
Alternative gate structure to increase TID tolerance and to achieve the best SEGR/TID trade-off

Rad-hard Power MOSFET Features

Gate oxide process optimized to reduce the Total Ionizing Dose (TID) susceptibility
Rad-Hard
Drain engineering structure to improve the Single Event Burnout (SEB) / Single Event Gate Rupture (SEGR) tolerance
Alternative gate structure to increase TID tolerance and to achieve the best SEGR/TID trade-off


Technology
Part number
BVDSS
Clamped
[V]
RDS(on)@
10V
[mOhm]
Channel
Polarity
Total ionizing dose
[krad]
Linear energy transfer
[Mev/(mg/cm2)]
Package
STripFET
100
24
N
100
37
TO-254AA
60
30
SMD-0.5
60
12
TO-254AA
100
160
TO-39
PowerMESH
200
44
TO-254AA
200
200
SMD-0.5
250
70
TO-254AA
250
550
TO-257
STripFET
100
60
P
100
37
TO-254AA
60
50
TO-254AA
60
18
TO-254AA
100
300
TO-257

 

 

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Product Selector and Datasheets
Power MOSFETs for Aerospace
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