* * _/_/_/_/_/_/ * _/ _/ * _/_/ _/ STMicroelectronics * _/ _/ * _/_/_/ _/ * www.st.com * * ***************************************************** * Model Generated by STMicroelectronics * * All Rights Reserved * * Commercial Use or Resale Restricted * ***************************************************** * CREATION DATES: 27-11-2006 * * * * POWER IGBT Model (Rev 1.0) * * * * EXTERNAL PINS DESCRIPTION: * * * * PIN 1 -> Collector * * PIN 2 -> Gate * * PIN 3 -> Emitter * * * * ****C**** * * ********************** * * *************************************** * * PARAMETER MODELS EXTRACTED FROM MEASURED DATA * * <<<<<<<<<<<>>>>>>>>>>> * * *************************************** * * THIS MODEL CAN BE USED AT TEMPERATURE: 25 °C * * * ***************************************************** * MODELLING FOR STGF20NB60S .SUBCKT STGF20NB60S 1 2 3 LG 10 2 7.5E-09 LE 3 15 7.5E-09 LC 13 1 4.5E-09 RG 10 5 13.501 RC 14 13 0.100E-02 RE 15 12 0.301E-02 RF 7 10 1MEG RX 4 14 705.023 CGE 12 5 1.68E-09 CCG 17 4 3.8E-09 CK 16 4 1.0E-11 DCG 12 11 DG Q1 12 11 14 Q M1 11 5 12 12 MOS E1 16 5 8 7 1 E2 17 5 6 7 1 G1 7 9 11 10 1u D1 8 9 DI D2 9 6 DI D3 16 4 DO R1 7 8 1MEG R2 7 6 1MEG .MODEL MOS NMOS + LEVEL = 3 + VTO = 4.572 + KP = 40.917 + THETA = 0.447 .MODEL Q PNP + IS = 0.589E-15 + VAF = 6.933 + BF = 1.688 + NE = 1.025 + ISE = 0.162E-13 + IKF = 3.921 + BR = 0.666E-01 + NC = 1.862 + NK = 0.989 + RB = 0.50E-03 + TF = 0.529E-06 + ITF = 0.225 + VTF = 7.238 + XTF = 9.369 .MODEL DI D + IS = 0.01E-12 + CJO = 0.641E-13 .MODEL DO D + IS = 0.01E-12 + CJO = 0.381E-10 + VJ = 0.75 + M = 0.35 .MODEL DG D + IS = 0.01E-12 + BV = 665 + VJ = 0.75 + M = 0.35 .ENDS STGF20NB60S * END OF MODELLING