* * _/_/_/_/_/_/ * _/ _/ * _/_/ _/ STMicroelectronics * _/ _/ * _/_/_/ _/ * www.st.com * * ***************************************************** * Model Generated by STMicroelectronics * * All Rights Reserved * * Commercial Use or Resale Restricted * ***************************************************** * CREATION DATES: 27-11-2006 * * * * POWER IGBT Model (Rev 1.0) * * * * EXTERNAL PINS DESCRIPTION: * * * * PIN 1 -> Collector * * PIN 2 -> Gate * * PIN 3 -> Emitter * * * * ****C**** * * ********************** * * *************************************** * * PARAMETER MODELS EXTRACTED FROM MEASURED DATA * * <<<<<<<<<<<>>>>>>>>>>> * * *************************************** * * THIS MODEL CAN BE USED AT TEMPERATURE: 25 °C * * * ***************************************************** * MODELLING FOR STGW39NC60VD .SUBCKT STGW39NC60VD 1 2 3 LG 10 2 7.5E-09 LE 3 15 7.5E-09 LC 13 1 4.5E-09 RG 10 5 15.001 RC 14 13 0.506E-04 RE 15 12 0.106E-02 RF 7 10 1MEG RX 4 14 883.381 CGE 12 5 0.248E-08 CCG 17 4 0.402E-08 CK 16 4 0.108E-09 DCE 12 14 DE DCG 12 11 DG Q1 12 11 14 Q M1 11 5 12 12 MOS E1 16 5 8 7 1 E2 17 5 6 7 1 G1 7 9 11 10 1u D1 8 9 DI D2 9 6 DI D3 16 4 DO R1 7 8 1MEG R2 7 6 1MEG .MODEL MOS NMOS + LEVEL = 3 + VTO = 6.774 + KP = 39.584 + THETA = 0.352 .MODEL Q PNP + IS = 0.444E-21 + VAF = 1.413 + BF = 2.848 + NE = 1.422 + ISE = 0.643E-13 + IKF = 19.734 + BR = 0.619E-01 + NC = 2.319 + NK = 0.303 + RB = 0.568E-04 + TF = 0.639E-06 + ITF = 1.035 + VTF = 10.031 + XTF = 0.102 .MODEL DI D + IS = 0.01E-12 + CJO = 0.108E-11 .MODEL DO D + IS = 0.01E-12 + CJO = 0.104E-10 + VJ = 0.75 + M = 0.35 .MODEL DE D + IS = 0.01E-12 + CJO = 0.973E-12 + BV = 665 + VJ = 0.75 + M = 0.35 .MODEL DG D + IS = 0.01E-12 + BV = 665 + VJ = 0.75 + M = 0.35 .ENDS STGW39NC60VD * END OF MODELLING