The typical 277V ac push-pull configuration shows the
reduction in components required when using the BUL742
solution - a saving of up to ten components.
To reinforce STs leadership as a manufacturer of power Bipolar
Transistors and to respond to the continuous market demand, ST
is enlarging its already wide lighting product range, with the
introduction of the BUL742 for High Frequency ballast applications.
Features
Minimum lot-to-lot spread;
High voltage capability (Bvces>900V);
Fast switching time;
Avalanche proof (6mJ with a L=2mH) ;
Available in a wide package range: TO-220,
I²PAK (BULB742-1) and D²PAK (BULB742T4)
The BUL742 bipolar is manufactured using high voltage multiepitaxial
planar technology for high switching speeds and high voltage capability.
It uses a cellular emitter structure with planar edge termination
to enhance switching speeds while maintaining the wide RBSOA.
Thanks to an increased intermediate layer, the device has an intrinsic
ruggedness which enables the transistor to withstand a high collector
current level during breakdown condition without using the transil
protection usually necessary in typical converters for lamp ballast.
suffix D = integrated free-wheeling diode
*120V ac mains #277V ac mains
Benefits
The BUL742 thanks to its intrinsic ruggedness, offers a good trade-off
in terms of performance and cost, making this technology very
flexible and ideal for cost effective lighting solutions. The
BUL742 is a 900V breakdown voltage device, so it is suggested
for electronic lamp ballast 2/4 x 32W lamps using 120V push-pull
configuration and for ballast 4 x 32W lamps using 277V half bridge
current-fed configuration. In the typical 120Vac push-pull configuration
shown below the 2 TRANSILS can be eliminated when the BUL742 solution
is chosen. The BUL742 is housed in the most common industry standard
through-hole and SMD packages, making this bipolar transistor
flexible for any PCB assembly solution.