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FDmesh MOSFETs Short Recovery Time Joins Benefits of Low On-Resistance & Fast Switching Rate

A wide product range of the new FDmesh series of high-voltage N-channel MOSFETs is now in full production. The new series adds an exceptionally short body-diode recovery time to the advantages of low on-resistance and fast switching rate already achieved by the existing MDmesh technology.

Due to their extremely fast inherent body diode and their enhanced dv/dt capability, FDmesh MOSFETs are recommended for high-efficiency bridge converters such as Zero Voltage Switching (ZVS) phase-shift topologies.

FDmesh

Features

The new FDmesh family brings new levels of performances to high frequency applications like ZVS phase-shift full bridge converters, welding machines, telecommunications and high-end servers.

On-resistance 3 times lower than standard products
Gate resistance minimized
Low Gate charge, a third the size of standard MOSFETs
Very high dv/dt capability (> 20V/nsec @ di/dt <= 400A/sec)
Short reverse recovery time (trr)
Reduced reverse recovery charge (Qrr)
Rugged avalanche operation
Lower on-losses than standard MOSFETs
Input and output capacitance smaller than standard MOSFETs
Turn-off improvements and reduction in switching losses


Benefits

Smaller heatsinks
Cost saving
Higher efficiency
Safe operation in bridge topologies

Fast Source Drain Diode

FDmesh MOSFETs - Fast Source Drain Diode FDmesh employs the basic MDmesh technology plus implanted metal ions (platinum) to shorten the reverse recovery time of the diode, trr. This is defined as the time taken by the current before going to zero after taking on negative values.
A great difference in terms of the diode's recovery time, between the standard STP20NM50 and its FDmesh version, STP20NM50FD, can be seen in the waveforms on the right.








Competition Analysis

The new FDmesh is unique as none of our direct competitors have devices or similar technology with fast-recovery body diodes. With the usual excellent and superior on-resistance of MDmesh, STW20NM50FD, STW45NM50FD and STP11NM60FD exhibit a far better gate charge, as seen in the table below.

Company P/N Package VDSS
(V)
RDS(on) max
(Ohm)
ID(cont)
@ 25°C
(A)
Qg typ
@ Vgs=10V
(nC)
trr
@ 25°C typ
(ns)
Irrm
@ 25°C typ
(A)
ST STW20NM50FD TO-247 500 0.25 20 38 175 14
IXYS IXFH21N50Q TO-247 500 0.25 21 90 250 (max) 8
ST STW45NM50FD TO-247 500 0.11 45 92 230 18
IR IRFPS40N50L TO-247 500 0.1 46 380 170 9
FAIRCHILD FQL40N50F TO264 500 0.11 40 155 250 (max) -
IXYS IXFX44N50Q PLU247 500 0.12 44 190 250 (max) 10
IXYS IXFN48N50Q ISOTOP 500 0.1 48 190 250 (max) 10
APT APT5010JFLL ISOTOP 500 0.1 44 92 250 (max) 15
ST STP11NM60FD TO-220 600 0.45 11 28 194 11.5