STB180N55F3 & STB185N55F3 New low R_DS(on) Power MOSFET generation for automotive and industrial segments

STB180N55F3 Product Page
STB185N55F3 Product Page

The STB180N55F3 and STB185N55F3 are the first devices manufactured in the new MDmesh Low Voltage technology. ST's "strip" layout competes against the industry's "trench" technology to achieve one of the best R_DS(on) values in the D²PAK package.

The target markets are primarily automotive for the STB185N55F3, and industrial for the STB180N55F3, where extremely low RDS(on) is required, for example: High current switching applications DC/DC converters Wiper blade motor control Industrial motor control (e.g., steppers) Solenoid drivers Antilock braking systems (ABS)

The 55V "N" series comes from the multi-drain approach now applied to the low voltage technology in order to significantly reduce the R_DS(on) per area.
TO-220 versions (STP180N55F3 and STP185N55F3) will soon be introduced. The next step is to develop a 55V line in the DPAK package in order to achieve an R_DS(on) typical value in the range of 8.0mOhm.
The comparison between the 55V device in both STripFET II and MDmesh low voltage technologies is shown below. The R_DS(on) x area for the new "N" series versus the previous NF series, is around 40% lower. That is, the "N" series provides the same R_DS(on) value with 40% less silicon area.


Typical R_DS(on) x area of N series versus NF series

Part number V(BR)DSS [V] RDS(on) max @ 10V, 60A [mΩ] RTHJ-C [°C/W] ID* [A] STB180N55F3 STB185N55F3 55 3.5 0.48 120 * Drain current is limited by wire bonding As for the 30V and 40V "N" series devices, the improvement for the new 55V technology is more than 35% compared to the "NF" types.