STD95N4F3
A new low R_DS(on) power MOSFET for automotive applications

STD95N4F3 Product Page

The very low R_DS(on) value of the new STD95N4F3 power MOSFET means it can easily compete against the best competition in the marketplace. STD95N4F3 is one of the first devices in a new “N...F3” series belonging to the well known STripFET III technology. This technology has now been further optimized to improve its performance in low voltage / low R_DS(on) switching applications. Housed in DPAK, in terms of R_DS(on) the STD95N4F3 is one of the best 40V devices available.

175°C operating temperature
Standard threshold drive
Typical R_DS(on) in the range of 5mOhm
100% avalanche rated
AEC Q101 compliant
P.A.T (part average testing) applied during wafer probing

The Technology

This series is a direct spin-off of the successful STripFET III technology.This further enhancement of the ST’s low voltage range has been optimized for automotive applications, addressing V_(BR)DSS ranging from 30V to 40V. A further optimization will bring devices ranging from 50V to 75V in order to achieve for these BV_DSS values the best R_DS(on) performance for D²PAK and DPAK in the market.
Thanks to this technology release it is now possible for ST to be extremely competitive in terms of R_DS(on) and cost performance. In fact the new “N...F3” series offer devices with a 30% reduction of silicon area to ensure the same R_DS(on) of the previous “NF” series.