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STV160NF02L/03L Advanced PowerSO-10 MOSFETs
for High Performance DC-DC Converters
 
Product Pages: STV160NF02L STV160NF03L

ST’s new STV160NF02L and STV160NF03L N-channel MOSFETs are manufactured in ST’s proprietary STripFET™ II low voltage technology, and are housed in PowerSO-10™ for surface mounting.

Thanks to this well consolidated technology coupled to the multi-wire and multi-stitch bonding technique introduced in the PowerSO-10™, these devices show the lowest on-resistance (1.6m ohm) and the lowest figure of merit RDS(on) * Qg .

The New “A” version of PowerSO-10™ exhibits almost the same performance in terms of RDS(on), with a simplified assembly procedure. 		STV160NF02L/03L
The new devices are ideal for synchronous buck converters for telecom and also in matching the very high current and fast transient response requirements in the newest generation of CPUs. The Kelvin source terminal enables the drive voltage to be applied between the gate and the Kelvin itself, therefore averting voltage drops of the type LS* dID/dt due to high rates of change of drain current across the stray inductance in series to the conventional source lead.

Applications
DC-DC converters
Electric Power Assisted Steering (EPAS)

Segments
Telecom
Computer
Automotive

Benefits
Cost effective solution
High conversion efficiency
Circuit layout optimization

Features
State-of-the-art low voltage process
Low on-resistance, low gate-charge
Fast switching
Excellent co-planarity, low profile, inductance and gate charge

Features

Typical forward converter with syncronous rectificationThese PowerSO-10™ devices are not only suitable for new designs, but can also replace existing solutions using paralleled SO-8, DPAK and D2PAK packages much more efficiently. This translates into simplification of circuit layout and board space saving.

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