 SuperMESH3 is an innovative technology covering the high-voltage breakdown class, in which the 950 V series is an absolute novelty on the market. It combines excellent electrical performances and reliability in a winning combination, differentiating it from any other product or technology available to date. Increased breakdown voltage margin versus the standards offered in today’s market, extremely good RDS(on)*area and improved switching performances, combined with outstanding avalanche ruggedness extend the capabilities of SuperMESH3 950 V MOSFETs to solve the most critical application issues for lighting and SMPS applications.
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The STP7N95K3 is the first power MOSFET of the new SuperMESH3 950 V series to be released. It offers up to 30% reduction in RDS(on) per device size compared to previous-generation MOSFETs, allowing designers to increase power density as well as improve efficiency. With its unbeatable avalanche ruggedness among comparable power MOSFETs currently available, it provides safer operating area and avalanche energy management
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| SuperMESH3 950 V series delivers the best switching performance among the same RDS(on) class standard technology devices |
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Vd=760V; Id=7.2A; Vgs=10V; Rg=47Ω |
Part
number |
Tdoff (ns) |
Tr (ns) |
Tc (ns) |
Tf (ns) |
STP7N95K3 |
139 |
55 |
53 |
46 |
Competition A |
670 |
96 |
135 |
120 |
Competition B. |
180 |
64 |
69 |
72 |
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| Datasheets and product selector |
 SuperMESH3 950 V |
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| Features |
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Higher voltage capability |
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Improved avalanche ruggedness |
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Lower on-resistance (up to 30% less compared to previous generation) |
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Enhanced dynamic performances (lower Qq, Ciss and Crss) |
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Improved diode reverse recovery characteristics |
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Fast diode available as additional feature |
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| Benefits |
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Larger safe-operating area |
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Higher avalanche energy handling |
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Lower conduction and switching losses |
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| Applications |
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SMPS for |
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Desktop PCs |
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LCD TVs |
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Industrial applications |
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Lighting ballast |
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