VNP28N04FI VNB28N04/VNV28N04
" OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
T Y PE V NP 28 N04 F I V NB 28 N04 V NV 28 N04
s s s s s s
V c l a mp 42 V 42 V 42 V
R DS( o n ) 0. 035 0. 0 35 0. 035
Ilim 28 A 28 A 28 A
s s
s
LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET
ISOWATT220
1 2
3
10
3 1
1
DESCRIPTION The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technolog y, intended for replacement of s tandard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh BLOCK DIAGRAM ()
D2PAK TO-263
PowerSO-10
enviroments. Fault feedbac k can be detected by monitoring the voltage at the input pin.
() PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998
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VNP28N04FI-VNB28N04-VNV28N04
ABSOLUTE MAXIMUM RATING
S ym b o l P ar am e t er P o w erS O - 10 D2P AK V DS V in ID IR V esd Pto t Tj Tc T st g Dr ain- s o ur c e V olt a ge ( V i n = 0 ) I n p u t V o l ta g e Dr ain Cur r en t Re v er s e DC O ut put Cur r e nt E l ec t r o s t a t i c D i s c h a r ge ( C = 1 0 0 pF , R = 1 . 5 K ) T o t a l D i s s ip a t io n a t T c = 2 5 C O p e r a t i n g J u n c t i o n T em p e r a t u r e C a s e O p e r a t in g T em p e r a tu r e S t o r a g e T e m per a t u r e
o
V al u e I S O W AT T 22 0
Unit
I nt er nall y C lam ped 18 I nt er nal ly Li m it ed - 28 2000 83 I nt er nal ly Li m it ed I nt er nal ly Li m it ed - 55 t o 1 50 34
V V A A V W
o o o
C C C
THERMAL DATA
I S O W AT T 220 P o w erS O - 10 R t h j - c a s e T he r m a l R e s is t a n ce J u n c t i o n - c a s e R t h j - a mb T he r m a l R e s is t a n ce J u n c t i o n - a m b ie nt M ax Ma x 3. 75 62. 5 1. 5 50 D 2P A K 1. 5 6 2. 5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (-40 < Tj < 125 oC unless otherwise specified) OFF
S ymb o l V CL AMP V CL T H V I NCL I DSS I I SS P a r a m et e r D r a in - s o ur c e C la m p V o lt age D r a in - s o ur c e C la m p T h r e s h o l d V o l ta g e I n p ut - S o ur c e R e v e r s e C l a m p V o l t ag e Z e r o I npu t V olt ag e D r a in C u r r e n t ( V i n = 0 ) S u pply C ur r ent f r om I n p ut P i n T est C o n d i t i o n s I D = 200 m A ID = 2 m A Iin = -1 mA V D S = 13 V V D S = 25 V VD S = 0 V Vin = 0 Vin = 0 Vi n = 1 0 V 250 Vin = 0 Vin = 0 Mi n. 34 31 - 1. 1 - 0. 1 1 00 2 00 6 00 T yp . 42 M a x. 51 Un i t V V V A A A
ON ()
S ymb o l VIN (th ) R DS( o n ) P a r a m et e r I n p ut T h r es h o l d V o lt age S t a t i c D r a i n - s ou r c e O n R e s is ta n c e V D S = Vi n T est C o n d i t i o n s ID + Ii n = 1 m A A A A A Mi n. 0. 8 T yp . M a x. 3 0. 035 0 . 05 0 . 07 0. 1 Un i t V
V i n = 10 V I D = 1 4 ID = 14 Vi n = 5 V - 4 0 < T j < 2 5 oC V i n = 10 V I D = 1 4 Vi n = 5 V ID = 14 o T j = 125 C
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VNP28N04FI-VNB28N04-VNV28N04
ELECTRICAL CHARACTERISTICS (continued) DYNAMIC
S ymb o l g fs ( ) Coss P a r a m et e r F o r war d T r a n s c o n d u c ta n c e O u t put Ca pac it anc e T est C o n d i t i o n s V D S = 13 V V D S = 13 V I D = 14 A f = 1 MH z Vi n = 0 Mi n. 9 T yp . 18 700 1100 M a x. Un i t S pF
SWITCHING (**)
S ymb o l td(on) tr td(of f) tf td(on) tr td(of f) tf ( di/ dt ) o n Qi P a r a m et e r T u r n - o n D el a y T im e Ri s e T im e T u r n - o f f D el a y T im e F a ll T im e T u r n - o n D el a y T im e Ri s e T im e T u r n - o f f D el a y T im e F a ll T im e T u r n - o n C ur r e n t S lo p e T o t a l I n p ut C h a rg e T est C o n d i t i o n s VD D = 1 5 V V g e n = 10 V ( s ee f igur e 3) VD D = 1 5 V V g e n = 10 V ( s ee f igur e 3) VD D = 1 5 V V i n = 10 V VD D = 1 2 V Id = 1 4 A Rg e n = 10 Mi n. T yp . 100 330 400 155 450 1.7 7.5 3.4 35 60 M a x. 3 00 8 00 9 00 4 00 9 00 4 25 10 Un i t ns ns ns ns ns s s s A /s nC
Id = 1 4 A Rg e n = 1000
ID = 14 A Rgen = 10 ID = 1 0 A V i n = 10 V
SOURCE DRAIN DIODE
S ymb o l V SD ( ) t r r ( ) Q r r ( ) I RRM ( ) P a r a m et e r F o r w ar d O n V olt ag e R e v e r s e R e c o v er y Ti me R e v e r s e R e c o v er y Ch ar ge R e v e r s e R e c o v er y C u r re n t I SD = 1 4 A T est C o n d i t i o n s V in = 0 180 0. 45 7 I SD = 1 4 A di/ dt = 10 0 A/ s o Tj = 2 5 C VD D = 3 0 V ( s e e t e s t c ir c uit , f ig ure 5) Mi n. T yp . M a x. 2 Un i t V ns C A
PROTECTION
S ymb o l Ilim t d l im ( ) T j s h ( ) T j r s ( ) Ig f () E a s ( ) P a r a m et e r D r a in C u r r e n t L i m it S t e p R e s p o n se C u r re n t L im i t O v er t em per at u r e S h ut dow n O v er t em per at u r e Re s et F a u lt S in k C u r r e n t S i n g l e Pu ls e A v alanc he E ner gy V i n = 10 V Vi n = 5 V VD S = 1 3 V V DS = 1 3 V
o
T est C o n d i t i o n s V i n = 10 V Vi n = 5 V V i n = 10 V Vi n = 5 V VD S = 1 3 V V DS = 1 3 V
Mi n. 19 19
T yp . 28 28 25 70
M a x. 41 41 40 1 20
Un i t A A s s
o
150 135 50 20 2. 5
C C
o
mA mA J
s t ar t in g T j = 25 C VD D = 2 0 V V i n = 10 V R g e n = 1 K L = 10 m H
( ) Pulsed: Pulse duration = 300 s , duty cycle 1.5 % ( ) Parameters guaranteed by design/characterization
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VNP28N04FI-VNB28N04-VNV28N04
PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate o f the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Ii ss) flows into the Input p in in order to supply the internal circuitry. The device integrates:
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these a re based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is a utomatically restarted when the chip temperature falls below 135oC.
- OVERVOLTAGE
CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET s tage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance o f 100 . The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
- LINEAR CURRENT LIMITER CIRCUIT: limits
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VNP28N04FI-VNB28N04-VNV28N04
Thermal Impedance For ISOWATT220 Thermal Impedance For D2PAK / PowerSO-10
Derating Curve
Output Characteristics
Transconductance
Static Drain-Source On Resistance vs Input Voltage
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VNP28N04FI-VNB28N04-VNV28N04
Static Drain-Source On Resistance Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
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VNP28N04FI-VNB28N04-VNV28N04
Normalized On Resistance vs Temperature Turn-on Current Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
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VNP28N04FI-VNB28N04-VNV28N04
Switching Time Resistive Load Switching Time Resistive Load
Current Limit vs Junction Temperature
Step Response Current Limit
Source Drain Diode Forward Characteristics
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VNP28N04FI-VNB28N04-VNV28N04
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Input Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
Fig. 6: Waveforms
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VNP28N04FI-VNB28N04-VNV28N04
ISOWATT220 MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 ¯ F
D
G1
E
H
F2
123 L2 L4
P011G
10/13
G
VNP28N04FI-VNB28N04-VNV28N04
TO-263 (D2PAK) MECHANICAL DATA
mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.3 2.49 0.7 1.25 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.4 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.055 0.068
DIM.
E C2 L2
A
D L L3
B2 B G
A1 C
P011P6/C
11/13
VNP28N04FI-VNB28N04-VNV28N04
PowerSO-10 MECHANICAL DATA
DIM. MIN. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q 0
o
mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 1.27 1.25 13.80 0.50 1.20 1.70 8o 1.80 0.047 1.35 14.40 0.049 0.543 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90
inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 0.050 0.053 0.567 0.002 0.071 0.067
B
0.10 A B
10 = H = A F A1 =
6
=
=
=
E = 1 5 e
0.25
M
=
E2
E3
E1
E4
=
=
A
=
SEATING PLANE DETAIL "A" Q
B
C
h
D = D1 = = = SEATING PLANE
= A1 L
DETAIL "A"
0068039-C
12/13
VNP28N04FI-VNB28N04-VNV28N04
Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such in formation nor fo r any in fringement of p atents or other rights of third parties whi ch ma y resu lt from its use. No licen se is grante d by implication or othe rwise un der any patent or paten t rights of STMicroelectro nics. Specification mentio ned in this publication are subj ect to change without notice. This publication supersedes and replaces all information previousl y supplied . STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without expres s written approval of STMicroelec tronics . The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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