STF2NK60Z - STQ2NK60ZR-AP
STP2NK60Z - STD2NK60Z-1
N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESHTM MOSFET
Table 1: General Features
TYPE STF2NK60Z STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1
s s s s s s
Figure 1: Package
ID 1.4 0.4 1.4 1.4 A A A A Pw 20 3W 45 W 45 W 8 8 8 8
VDSS 600 V 600 V 600 V 600 V
RDS(on) < < < <
3
TYPICAL RDS(on) = 7.2 EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-92 (Ammopack) TO-220
1
2
3 2 1
3 1 2
DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
IPAK
T O- 2 2 0 F P
Figure 2: Internal Schematic Diagram
APPLICATIONS s LOW POWER BATTERY CHARGERS s SWITH MODE LOW POWER SUPPLIES(SMPS) s LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1 STF2NK60Z Marking Q2NK60ZR P2NK60Z D2NK60Z F2NK60Z Package TO-92 TO-220 IPAK TO-220FP Packaging AMMOPAK TUBE TUBE TUBE
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Table 3: Absolute Maximum ratings
Symbol Parameter TO-220 / IPAK VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) VISO dv/dt (1) Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD (HBM-C= 100pF, R=1.5k) Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 4.5 -55 to 150 1.4 0.77 5.6 45 0.36 Value TO-92 600 600 30 0.4 0.25 1.6 3 0.025 1500 2500 1.4 (*) 0.77 (*) 5.6 (*) 20 0.16 TO-220FP V V V A A A W W/C V V V/ns C Unit
( ) Pulse width limited by safe operating area (1) ISD 1.4A, di/dt 200A/s, VDD V(BR)DSS, T j T JMAX. (*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/IPAK Rthj-case Rthj-amb Rthj-lead Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose 2.77 100 -300 TO-220FP 6.25 100 -TO-92 -120 40 260 Unit C/W C/W C/W C
Table 5: Avalanche Characteristics
Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 1.4 90 Unit A mJ
Table 6: Gate-Source Zener Diode
Symbol BVGSO Parameter Gate source Breakdown Voltage Test Conditions Igs= 1 mA (Open Drain) Min. 30 Typ. Max. Unit V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 50 A VGS = 10V, ID = 0.7 A 3 3.75 7.2 Min. 600 1 50 10 4.5 8 Typ. Max. Unit V A A A V
Table 8: Dynamic
Symbol gfs (1) Ciss Coss C rs s Coss eq. (3) td(on) tr td(off) tr Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V, ID= 0.7 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1 170 27 5 30 8 30 22 55 7.7 1.7 4 10 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 300 V, ID = 0.65 A, RG= 4.7 , VGS = 10 V (Resistive Load see, Figure 22) VDD = 480V, ID = 1.5 A, VGS = 10V (see, Figure 24)
Table 9: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.5 A, VGS = 0 ISD = 1.3 A, di/dt = 100 A/s VDD = 25V, Tj = 25C (see test circuit, Figure 23) ISD = 1.3 A, di/dt = 100 A/s VDD = 25V, Tj = 150C (see test circuit, Figure 23) 250 550 4.4 300 690 4.6 Test Conditions Min. Typ. Max. 1.5 6 1.6 Unit A A V ns C A ns C A
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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Figure 3: .Safe Operating Area For TO-220 Figure 6: Thermal Impedance For TO-220
Figure 4: Safe Operating Area For IPAK
Figure 7: Thermal Impedance For IPAK
Figure 5: Safe Operating Area For TO-92
Figure 8: Thermal Impedance For TO-92
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Figure 9: Safe Operating Area For TO-220FP Figure 12: Thermal Impedance For TO-220FP
Figure 10: Output Characteristics
Figure 13: Transfer Characteristics
Figure 11: Transconductance
Figure 14: Gate Charge vs Gate-source Voltage
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Figure 15: Static Drain-source On Resistance Figure 18: Source-Drain Forward Characteristics
Figure 16: Capacitance Variations
Figure 19: Maximum Avalanche Energy vs Temperature
Figure 17: Normalized Gate Thereshold Voltage vs Temperature
Figure 20: Normalized On Resistance vs Temperature
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Figure 21: Normalized BVDSS vs Temperature
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Figure 22: Switching Times Test Circuit For Resistive Load Figure 24: Gate Charge Test Circuit
Figure 23: Test Circuit For Inductive Load Switching and Diode Recovery Times
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In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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TO-92 AMMOPACK
mm. MIN. 4.45 3.30 TYP MAX. 4.95 3.94 1.6 2.3 0.41 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.56 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0.11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.016 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. 0.170 0.130 inch TYP. MAX. 0.194 0.155 0.06 0.09 0.022 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43
DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P
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TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
C A C2
L2
D
B3 B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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TO-92 MECHANICAL DATA
mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch
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TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1
D
F
G1 H
F2
L2 L5
E
123
L4
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G
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Table 10: Revision History
Date 07-Jul-2004 11/Nov/2004 05-Sep-2005 Revision 3 4 5 Description of Changes The document change from "TARGET" to "COMPLETE" New stylesheet Added TO-220FP Inserted Ecopack indication
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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