Datasheets | Transistors | Transistors, Power Bipolar | Very High Voltage

High voltage fast-switching NPN power transistor

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Last Updated: 14/01/2008

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BUL213

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BUL213
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

s

s s s

s s s

STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC
1 2

3

APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL213 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM Ptot Tstg Tj Parameter C o ll e c t o r -E m i t t e r Voltage (V B E = 0) C o ll e c t o r -E m i t t e r Voltage (I B = 0) Em it t e r -B a s e Voltage (I C = 0) C o ll e c t o r Current C o ll e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T o t a l Dissipation at T c = 25 o C St o r a g e Temperature M a x . Operating Junction Temperature Value 1300 600 9 3 6 2 4 60 - 6 5 to 150 150 U ni t V V V A A A A W
o o

C C

February 2003

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BUL213
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m a l Resistance Junction-Case T h e r m a l Resistance Junction-Ambient Max Max 2 .0 8 62.5
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S IC EO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = 0) C o l l e c t o r Cut-off C u r r e n t (I B = 0) T e s t Conditions V C E = 1300 V V C E = 1300 V V C E = 600 V I C = 100 mA L = 25 mH 600 T c = 125 o C Min. Typ. Ma x. 10 0 50 0 25 0 Unit A A A V

V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) VEBO V C E(s at ) V B E (s at ) hFE E m i t t e r- B a s e Voltage ( I C = 0) C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage D C Current Gain I N D U C T I V E LOAD S t o r a g e Time F a l l Time I N D U C T I V E LOAD S t o r a g e Time F a l l Time

I E = 10 mA I C = 0.5 A IC = 1 A I C = 0.5 A IC = 1 A I C = 0.35 A I C = 10 mA IC = 1 A I B 1 = 0.2 A L = 200 H IC = 1 A I B 1 = 0.2 A L = 200 H I B = 0.1 A I B = 0.2 A I B = 0.1 A I B = 0.2 A VCE = 3 V VCE = 5 V V C L = 400 V I B 2 = -0.4 A V C L = 400 V I B 2 = -0.4 A T c = 125 o C

9 0.5 0.9 1.2 1.5 16 12 4 250 5.2 380 36

V V V V V

ts tf ts tf

6 42 0

s ns s ns

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

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BUL213
Safe Operating Areas Derating Curve

DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

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BUL213
Reverse Biased SOA Inductive Load Switching Test Circuit

1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier

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BUL213

TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409

P011CI
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BUL213

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