STD2NK70Z STD2NK70Z-1
N-channel 700V - 6 - 1.6 A - DPAK/IPAK Zener protected SuperMESHTM Power MOSFET
General features
Type STD2NK70Z STD2NK70Z-1
VDSS 700V 700V
RDS(on) 7 7
ID 1.6A 1.6A
Pw 45W 45W
1 3
2 1 3
Extremely high dv/dt capability ESD improved capability 100% avalanche tested New high voltage benchmark Gate charge minimized
DPAK
IPAK
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STD2NK70Z STD2NK70Z-1 Marking D2NK70Z D2NK70Z Package D˛PAK IPAK Packaging Tape & reel Tube
July 2006
Rev 3
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www.st.com 16
Contents
STD2NK70Z - STD2NK70Z-1
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 7
3 4 5 6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 700 700 30 1.6 1 6.4 45 0.36 2000 4.5 55 to 150 Max. operating junction temperature Unit V V V A A A W W/C V V/ns C
Ptot
VESD(G-S) dv/dt
(2)
Gate source ESD (HBM-C = 100pF, R = 1.5 K) Peak diode recovery voltage slope Storage temperature
Tstg Tj
1. Pulse width limited by safe operating area. 2. ISD .6A, di/dt 00A/s, VDD V(BR)DSS, Tj TJMAX 1 2
Table 2.
Rthj-case Rthj-amb TJ
Thermal data
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 2.78 100 300 C/W C/W C
Table 3.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (star ting Tj=25C, Id=Iar, Vdd=50V) Value 1.6 110 Unit A mJ
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Electrical ratings
STD2NK70Z - STD2NK70Z-1
Table 4.
Symbol BVGSO
Gate-source zener diode
Parameter Gate-source breakdown voltage Test Condition
Igs= 1mA (open drain)
Min. 30
Typ.
Ma x
Unit A
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STD2NK70Z - STD2NK70Z-1
Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 50A VGS= 10V, ID= 0.8A 3 3.75 6 Min. 700 1 50 10 4.5 7 Typ. Max. Unit V A A nA V
Table 6.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 0.8A VDS =25V, f=1 MHz, VGS=0 Min. Typ. 1.4 280 35 6.5 17 7 17 20 35 11.4 2 6.8 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
Coss eq(2). Equivalent output capacitance td(on) tr td(off) tf Qg Qgs Qgd Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
VGS=0, VDS =0V to 560V VDD=350 V, ID= 0.8A, RG=4.7, VGS=10V (see Figure 14) VDD=560V, ID = 0.8A VGS =10V (see Figure 15)
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS
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Electrical characteristics
STD2NK70Z - STD2NK70Z-1
Table 7.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1.6A, VGS=0 ISD=1.6A, di/dt = 100A/s, VDD=50V, Tj=25C (see Figure 16) ISD=1.6A, di/dt = 100A/s, VDD= 50V, Tj=150C (see Figure 16) 334 918 5.5 Test conditions Min Typ. Max 1.6 6.4 1.6 Unit A A V ns C A
Reverse recovery time Reverse recovery charge Reverse recovery current
350 1050 6
ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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STD2NK70Z - STD2NK70Z-1
Electrical characteristics
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8.
STD2NK70Z - STD2NK70Z-1 Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
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STD2NK70Z - STD2NK70Z-1 Figure 13. Maximum avalanche energy vs temperature
Electrical characteristics
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Test circuit
STD2NK70Z - STD2NK70Z-1
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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STD2NK70Z - STD2NK70Z-1
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STD2NK70Z - STD2NK70Z-1
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
C A C2
L2
D
B3 B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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STD2NK70Z - STD2NK70Z-1
Package mechanical data
DPAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch
0068772-F
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Packaging mechanical data
STD2NK70Z - STD2NK70Z-1
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 16.4 50 22. 4 18. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0. 795 0.645 0.724 1. 968 0.881 BULK QTY 2500 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6. 8 10.4 1. 5 1. 5 1.65 7. 4 2.55 3. 9 7. 9 1. 9 40
15.7 16.3
inch MIN. MAX . 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0. 059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1. 574
0.618 0.641
MAX . 10. 6 12. 1 1.6 1. 85 7.6 2. 75 4.1 8.1 2.1
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STD2NK70Z - STD2NK70Z-1
Revision history
6
Revision history
Table 8.
Date 21-Jan-2005 10-Jun-2005 13-Jul-2006
Revision history
Revision 1 2 3 First Release Updated Figure 1: Safe operating area New template, no content change Changes
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STD2NK70Z - STD2NK70Z-1
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