STGF3NC120HD
N-CHANNEL 3A - 1200V TO-220FP FAST PowerMESHTM IGBT with Integral Damper Diode
Table 1: General Features
TYPE STGF3NC120HD
s s s s
Figure 1: Package
IC @100C 3A
VCES 1200 V
VCE(sat) (Max) @25C < 2.8 V
LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH SPEED
3 1 2
DESCRIPTION This PowerMESHTM IGBT is designed using the latest high voltage technology based on a patented strip layout. A new lifetime control allows good switching performance and low voltage drop. This IGBT featuring a co-packaged diode is optimized for horizontal deflection applications in small and medium sets.
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS s HORIZO NTAL DEFLECTION s HOME APPLIANCE s LIG HTING
Table 2: Order Code
PART NUMBER STGF3NC120HD M AR KING GF3NC120HD PACKAGE TO-220FP PACKAGING TUBE
Rev. 2
January 2005
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Table 3: Absolute Maximum ratings
Symbol V CE S VECR VGE IC IC ICM ( ) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Insulation withstand voltage AC (t=1sec, Tc=25C) Storage Temperature Operating Junction Temperature range Value 1200 20 20 6 3 10 25 0.20 2500 55 to 150 Unit V V V A A A W W/C V C
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Min. Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 Typ. Max. 5.0 62.5 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off
Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 1 mA, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 VCE = VGE, IC = 250 A VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tc= 125C 2 2.3 2.2 Min. 1200 50 1 100 5 2.8 Typ. Max. Unit V A mA nA V V V
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol gfs (1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-off SOA minimum current VCC = 960 V, IC = 3 A, VGE = 15 V (see Figure 22) Vclamp = 960 V , Tj = 150C RG = 10 , VGE = 15 V 10 Test Conditions VCE = 25 V , IC = 3 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 4 470 45 6 24 3 10 32 Max. Unit S pF pF pF nC nC nC A
(1) Pulsed: Pulse duration= 300 s, duty cycle 1.5%
Table 7: Switching On
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Test Conditions VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 20) VCC = 480 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 20) Min. Typ. 15 3.5 880 14.5 4 770 Max. Unit ns ns A/s ns ns A/s
Table 8: Switching Off
Symbol tr(Voff) td(off) tf tr(Voff) td(off) tf Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions Vcc = 800 V, IC = 3 A, RG = 10 , VGE = 15 V TJ = 25 C (see Figure 20) Vcc = 800 V, IC = 3 A, RG = 10 , VGE = 15 V Tj = 125 C (see Figure 20) Min. Typ. 72 118 250 132 210 470 Max. Unit ns ns ns ns ns ns
Table 9: Switching Energy
Symbol Eon (2) Eoff (3) Ets Eon (2) Eoff (3) Ets Parameterr Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Test Conditions VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 21) VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 21) Min. Typ. 236 290 526 360 620 980 Max Unit J J J J J J
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C) (3) Turn-off losses include also the tail of the collector current.
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Table 10: Collector-Emitter Diode
Symbol If Ifm Vf trr Qrr Irm trr Qrr Irm Parameterr Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 1.5 A If = 1.5A, Tj = 125C If = 3 A, VR = 40 V Tj = 25C, di/dt = 100 A/s (see Figure 23) If = 3 A, VR = 40 V Tj = 125C, di/dt = 100 A/s (see Figure 23) 1.6 1.3 51 85 3.3 64 133 4.2 Test Conditions M i n. Typ. Max 3 12 2.0 Unit A A V V ns nC A ns nC A
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Figure 3: Output Characteristics Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temp e rat u re
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temp e rat u re
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Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Switching Losses vs Temperature
Figure 11: Switching Losses vs Gate Resist a n ce
Figure 14: Switching Losses vs Collector Current
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Figure 15: Thermal Impedance Figure 18: Power Losses
Figure 16: Collector-Emitter Diode Characteri st i cs
Figure 19: Power Losses
Figure 17: Turn-Off SOA
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Figure 20: Test Circuit for Inductive Load Switching Figure 22: Gate Charge Test Circuit
Figure 21: Switching Waveforms
Figure 23: Diode Recovery Time Waveforms
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TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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Table 11: Revision History
Date 13-Dec-2004 21-Jan-2005 Revision 1 2 First release Modified Curve 17 Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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