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Transistors, Power Bipolar
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Very High Voltage
High voltage NPN power transistor for high definition and new super slim CRT displays
Datasheet
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Last Updated: 28/01/2008
Pages: 8
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Generic Part Number
Orderable Part Number
Status
HD1750FX
HD1750FX
Active
Related Information
Additional Information: HD1xxxx SERIES - High Voltage Transistors for Horizontal Deflection in Ultrahigh Resolution CRT Displays
Power Bipolar Transistors Product Page
Related Press Releases
New High Voltage Bipolar Transistor Technology from STMicroelectronics Aids CRT Revival
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HD1750FX
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS
STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANT
Figure 1: Package
APPLICATIONS
ISOWATT218FX
H ORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH-END MONITORS Figure 2: Internal Schematic Diagram
DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
Table 1: Order Codes
Part Number HD1750FX Marking HD1750FX Package ISOWATT218FX Packaging TUBE
December 2005
Rev. 2
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HD1750FX
Table 2: Absolute Maximum Ratings
Symbol VCES V CE O VEBO IC ICM IB IBM Ptot Vins Tstg TJ Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature
o
Value 1700 800 10 24 36 12 18 75 2500 -65 to 150 150
Unit V V V A A A A W V C C
Table 3: Thermal Data
Rthj-case Thermal Resistance Junction-Case Max 1.67
oC/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol ICES Parameter Test Conditions Min. Typ. Max. 0.2 TC = 125 oC 2 10 800 Unit mA mA A V Collector Cut-off Current VCE = 1700 V (VBE = 0) V = 1700 V
CE
IEBO
Emitter Cut-off Current (IC = 0)
VEB = 5 V IC = 10 mA
VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VEBO VCE(sat)* VBE(sat)* hFE Emitter-Base Voltage (IC = 0 )
IE = 10 mA IB = 3 A IB = 3 A V CE = 5 V V CE = 5 V fh = 31250 Hz IB(off) = -8.1 A VBE(off) = -2.7 V fh = 100 kHz IB(off) = -5.85 A VBE(off) = -2.7 V
10 3 0.95 30 6.5 3.1 350 9.5 3.8 500 1.5
V V V
Collector-Emitter IC = 12 A Saturation Voltage Base-Emitter Saturation IC = 12 A Voltage DC Current Gain IC = 1 A IC = 12 A INDUCTIVE LOAD IC = 12 A IB(on) = 1.9 A VCE(fly) = 1320 V LBB(off) = 0.8 H INDUCTIVE LOAD IC = 6.5 A IB(on) = 1.2 A VCE(fly) = 1220 V LBB(off) = 0.25 H
ts tf
Storage Time Fall Time
s ns
ts tf
Storage Time Fall Time
1.7 180
2 250
s ns
* Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %.
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Figure 3: Safe Operating Area Figure 6: Derating Curve
Figure 4: Output Chatacterisctics
Figure 7: Reverse Biased SOA
Figure 5: DC Current Gain
Figure 8: DC Current Gain
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Figure 9: Collector-Emitter Saturation Voltage Figure 12: Base-Emitter Saturation Voltage
Figure 10: Power Losses
Figure 13: Power Losses
Figure 11: Inductive Load Switching Time
Figure 14: Inductive Load Switching Time
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Figure 15: Power Losses and Inductive Load Switching Test Circuit
Figure 16: Reverse Biased Safe Operating Area Test Circuit
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ISOWATT218FX MECHANICAL DATA
DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia
MIN. 5 .30 2 .80 3 .10 1.80 0 .80 0 .65 1.80 10.30 15.30 9 22.80 26.30 43.20 4.30 24.30 14.60 1 .80 3 .80 3 .40
mm. TYP
MAX. 5 .70 3 .20 3 .50 2.20 1 .10 0 .95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2 .20 4 .20 3 .80
5.45
7627132 B
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Figure 5: Revision History
Release Date 30-May-2005 19-Dec-2005 Version 1 2 Initial Release. New hFE value in table 4 Change Designator
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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