LIS3L02AL
MEMS INERTIAL SENSOR: 3-axis - +/-2g ultracompact linear accelerometer
Features

2.4V to 3.6V single supply operation Low power consumption
2g full-scale

0.5mg resolution over 100hz bandwidth Embedded self test Output voltage, offset and sensitivity ratiometric to the supply voltage High shock survivability ECOPACK Lead-free compliant (see Section 6) LGA-8

to design a dedicated circuit which is trimmed to better match the sensing element characteristics. The LIS3L02AL has a full scale of 2g and it is capable of measuring accelerations over a bandwidth of 1.5 kHz for all axes. The device bandwidth may be reduced by using external capacitances. A self-test capability allows to check the mechanical and electrical signal path of the sensor. The LIS3L02AL is available in plastic SMD package and it is guaranteed to operate over an extended temperature range of -40C to +85C. The LIS3L02AL belongs to a family of products suitable for a variety of applications: Mobile terminals Gaming and Virtual Reality input devices Free-fall detection for data protection Antitheft systems and Inertial Navigation Appliance and Robotics.

Description
The LIS3L02AL is a low-power 3-axis linear capacitive accelerometer that includes a sensing element and an IC interface able to take the information from the sensing element and to provide an analog signal to the external world. The sensing element, capable of detecting the acceleration, is manufactured using a dedicated process developed by ST to produce inertial sensors and actuators in silicon.

The IC interface is manufactured using a standard CMOS process that allows high level of integration

Order codes

bs O

Part number LIS3L02AL

let o

od Pr e

ct u

(s)

so Ob -

te le

ro P

uc d

s) t(

Temp range, C -40C to +85C -40C to +85C

Package LGA-8 LGA-8

Packing Tray Tape & Reel

LIS3L02ALTR

May 2006

Rev 2

1/17
www.st.com 17

Contents

LIS3L02AL

Contents
1 Block diagram & pins description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2

Mechanical and electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 2.2 2.3 2.4 Mechanical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3

Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1 3.2 3.3 Sensing element . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 IC Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Factor y calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4

Application hints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 4.2 Soldering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Output response vs. orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5

Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1 5.2 5.3 Mechanical Characteristics at 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Mechanical Characteristics derived from measurement in the -40C to +85C temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Electrical characteristics at 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

6

bs O
7

let o

Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

2/17

LIS3L02AL

Block diagram & pins description

1
1.1

Block diagram & pins description
Block diagram
Figure 1. Block diagram

X+ Y+ Z+

CHARGE AMPLIFIER

Routx Voutx S/H

a
ZYX-

MUX

DEMUX

Routy Vouty S/H

Routz Voutz S/H

SELF TEST

REFERENCE

TRIMMING CIRCUIT

1.2

Pin Description
Figure 2.

Pin Connection

bs O

let o

ro P e
X Y

du
1

(s) ct
Z

so Ob -

te le

ro P

CLOCK

uc d

s) t(

LIS3L02AL
Vdd

Voutx Vouty Reserved

ST Voutz GND

DIRECTION OF THE DETECTABLE ACCELERATIONS

Reserved BOTTOM VIEW

3/17

Block diagram & pins description Table 1.
Pin # 1 2 3 4 5 6 7 8

LIS3L02AL

Pin description
Pin Name ST Voutz GND Reserved Reserved Vouty Voutx Vdd Function Self Test (Logic 0: normal mode; Logic 1: Self-test) Output Voltage Z channel 0V supply Leave unconnected Leave unconnected Output Voltage Y channel Output Voltage X channel Power supply

bs O

let o

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

4/17

LIS3L02AL

Mechanical and electrical specifications

2
2.1
Table 2.

Mechanical and electrical specifications
Mechanical characteristics
Mechanical characteristics(1) (Temperature range -40C to +85C) All the parameters are specified @ Vdd =3.3V, T = 25C unless otherwise noted
Parameter Acceleration Range(3) Sensitivity
(4)

Symbol Ar So SoDr Voff OffDr

Test Condition

Min. 1.8

Typ.(2) 2.0 Vdd/5 0.01

Max.

Unit g

Full-scale = 2g Delta from +25C T = 25C Delta from +25C Best fit straight line Full-scale = 2g X, Y axis Best fit straight line Full-scale = 2g Z axis

Vdd/510%

Vdd/5+10%

V/g %/C

Sensitivity Change Vs Temperature Zero-g Level(4) Zero-g level Change Vs Temperature

Vdd/2-6%

Vdd/2 0.5

Vdd/2+6%

V mg/C

0.3

1.5

NL

Non Linearity(5)

CrossAx Cross-Axis(6) An Acceleration Noise Density Vdd=3.3V; Full-scale = 2g T = 25C Vdd=3.3V Full-scale = 2g X axis

Vt

Self test Output Voltage Change(7),(8)

bs O
Fres Top Wh

let o

od Pr e

ct u

(s)

so Ob -20 20

eP let
0.5 2 50 -50

od r

uc
4

s) t(
% % % g/

1.5

Hz

-100

mV

T = 25C Vdd=3.3V Full-scale = 2g Y axis T = 25C Vdd=3.3V Full-scale = 2g Z axis

50

100

mV

20

50

100

mV

Sensing Element all axes Resonance Frequency(9) Operating Temperature Range Product Weight

1.5 -40 0.08 +85

kHz C gram

1. The product is factory calibrated at 3.3V. The device can be powered from 2.4V to 3.6V. Voff, So and Vt parameters will vary with supply voltage.

5/17

Mechanical and electrical specifications

LIS3L02AL

2. Typical specifications are not guaranteed 3. Guaranteed by wafer level test and measurement of initial offset and sensitivity 4. Zero-g level and sensitivity are essentially ratiometric to supply voltage 5. Guaranteed by design 6. Contribution to the measuring output of the inclination/acceleration along any perpendicular axis 7. Self test "output voltage change" is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0) 8. Self test "output voltage change" varies cubically with supply voltage 9. Minimum resonance frequency Fres=1.5kHz. Sensor bandwidth=1/(2**110k*Cload) with Cload>1nF.

2.2
Table 3.

Electrical Characteristics
Electrical Characteristics(1) (Temperature range -40C to +85C) All the parameters are specified @ Vdd =3.3V, T=25C unless otherwise noted
Parameter Supply Voltage Supply Current Self Test Input Logic 1 level Rout Output Impedance Capacitive Load Drive(3) 0.7*Vdd mean value Logic 0 level Vst 0 Test Condition Min. 2.4 Typ.(2) 3.3 0.85 Max. 3.6 Unit V

Symbol Vdd Idd

Cload Top

Operating Temperature Range

1. The product is factory calibrated at 3.3V 2. Typical specifications are not guaranteed

3. Minimum resonance frequency Fres=1.5kHz. Sensor bandwidth=1/(2**110k*Cload) with Cload>1nF

bs O

let o

Pr e

du o

(s) ct

Ob -

so

-40

eP let
80 1

110

ro

uc d
Vdd 140 +85

1.5

0.3*Vdd

s) t(
V V nF C

mA

k

6/17

LIS3L02AL

Mechanical and electrical specifications

2.3

Absolute maximum ratings
Stresses above those listed as "absolute maximum ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 4.
Symbol Vdd Vin APOW Supply voltage Input Voltage on Any Control pin (ST) Acceleration (Any axis, Powered, Vdd=3.3V) 10000g for 0.1 ms 3000g for 0.5 ms AUNP TSTG Acceleration (Any axis, Not powered) 10000g for 0.1 ms Storage Temperature Range -40 to +125 2kV HBM ESD Electrostatic Discharge Protection

Absolute maximum ratings
Ratings Maximum Value -0.3 to 7 -0.3 to Vdd +0.3 3000g for 0.5 ms Unit V V

This is a Mechanical Shock sensitive device, improper handling can cause permanent damages to the part This is an ESD sensitive device, improper handling can cause permanent damages to the part

2.4

Terminology

bs O

let o

Sensitivity describes the gain of the sensor and can be determined by applying 1g acceleration to it. As the sensor can measure DC accelerations this can be done easily by pointing the axis of interest towards the center of the earth, note the output value, rotate the sensor by 180 degrees (point to the sky) and note the output value again thus applying 1g acceleration to the sensor. Subtracting the larger output value from the smaller one and dividing the result by 2 will give the actual sensitivity of the sensor. This value changes very little over temperature (see sensitivity change vs. temperature) and also very little over time. The Sensitivity Tolerance describes the range of Sensitivities of a large population of sensors.

Pr e

du o

(s) ct

so Ob -

te le

ro P

200V MM

1500V CDM

uc d

s) t(
C

Zero-g level describes the actual output signal if there is no acceleration present. A sensor in a steady state on a horizontal surface will measure 0g in X axis and 0g in Y axis. The output is ideally for a 3.3V powered sensor Vdd/2 = 1650mV. A deviation from ideal 0-g level (1650mV in this case) is called Zero-g offset. Offset of precise MEMS sensors is to some extend a result of stress to the sensor and therefore the offset can slightly change after mounting the sensor onto a printed circuit board or exposing it to extensive mechanical stress. Offset changes little over temperature - see "Zero-g level change vs. temperature" the Zero-g level of an individual sensor is very stable over lifetime. The Zero-g level tolerance describes the range of Zero-g levels of a population of sensors.

7/17

Mechanical and electrical specifications

LIS3L02AL

Self Test allows to test the mechanical and electric part of the sensor, allowing the seismic mass to be moved by means of an electrostatic test-force. The Self Test function is off when the ST pin is connected to GND. When the ST pin is tied at Vdd an actuation force is applied to the sensor, simulating a definite input acceleration. In this case the sensor outputs will exhibit a voltage change in their DC levels which is related to the selected full scale and depending on the Supply Voltage through the device sensitivity. When ST is activated, the device output level is given by the algebraic sum of the signals produced by the acceleration acting on the sensor and by the electrostatic test-force. If the output signals change within the amplitude specified inside Table 2, than the sensor is working properly and the parameters of the interface chip are within the defined specification. Output impedance describes the resistor inside the output stage of each channel. This resistor is part of a filter consisting of an external capacitor of at least 1nF and the internal resistor. Due to the high resistor level only small, inexpensive external capacitors are needed to generate low corner frequencies. When interfacing with an ADC it is important to use high input impedance input circuitries to avoid measurement errors. Note that the minimum load capacitance forms a corner frequency beyond the resonance frequency of the sensor. For a flat frequency response a corner frequency well below the resonance frequency is recommended. In general the smallest possible bandwidth for an particular application should be chosen to get the best results.

bs O

let o

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

8/17

LIS3L02AL

Functionality

3

Functionality
The LIS3L02AL is a high performance, low-power, analog output 3-axis linear accelerometer packaged in a LGA package. The complete device includes a sensing element and an IC interface able to take the information from the sensing element and to provide an analog signal to the external world.

3.1

Sensing element
A proprietary process is used to create a surface micro-machined accelerometer. The technology allows to carry out suspended silicon structures which are attached to the substrate in a few points called anchors and are free to move in the direction of the sensed acceleration. To be compatible with the traditional packaging techniques a cap is placed on top of the sensing element to avoid blocking the moving parts during the moulding phase of the plastic encapsulation. When an acceleration is applied to the sensor the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This imbalance is measured using charge integration in response to a voltage pulse applied to the sense capacitor. At steady state the nominal value of the capacitors are few pF and when an acceleration is applied the maximum variation of the capacitive load is up to 100fF.

3.2

IC Interface

In order to increase robustness and immunity against external disturbances the complete signal processing chain uses a fully differential structure. The final stage converts the differential signal into a single-ended one to be compatible with the external world. The signals of the sensing element are multiplexed and fed into a low-noise capacitive charge amplifier that implements a Correlated Double Sampling system (CDS) at its output to cancel the offset and the 1/f noise. The output signal is de-multiplexed and transferred to three different S&Hs, one for each channel and made available to the outside. The low noise input amplifier operates at 200 kHz while the three S&Hs operate at a sampling frequency of 66 kHz. This allows a large oversampling ratio, which leads to inband noise reduction and to an accurate output waveform.

bs O.3 3

let o

All the analog parameters (Zero-g level, sensitivity and self-test) are ratiometric to the supply voltage. Increasing or decreasing the supply voltage, the sensitivity and the offset will increase or decrease almost linearly. The self test voltage change varies cubically with the supply voltage.

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

Factory calibration
The IC interface is factory calibrated for sensitivity (So) and Zero-g level (Voff). The trimming values are stored inside the device by a non volatile structure. Any time the device is turned on, the trimming parameters are downloaded into the registers to be employed during the normal operation. This allows the user to employ the device without further calibration.

9/17

Application hints

LIS3L02AL

4

Application hints
Figure 3. LIS3L02AL electrical connection
Vdd 10F GND 100nF GND
ST

Z
Optional Vout X

X 1

LIS3L02AL (top view)
GN D

Cload x

Optional Vout Y Cload y

Y
DIRECTION OF THE DETECTABLE ACCELERATIONS

Optional Vout Z Cload z

Digital signals

Power supply decoupling capacitors (100nF ceramic or polyester + 10F Aluminum) should be placed as near as possible to the device (common design practice). The LIS3L02AL allows to band limit Voutx, Vouty and Voutz through the use of external capacitors. The re-commended frequency range spans from DC up to 1.5 KHz. In particular, capacitors must be added at output pins to implement low-pass filtering for antialiasing and noise reduction. The equation for the cut-off frequency (ft) of the external filters is:
1 f t = ------------------------------------------------------------------2 R o u t C l o a d ( x, y, z )

Taking in account that the internal filtering resistor (Rout) has a nominal value equal to 110k, the equation for the external filter cut-off frequency may be simplified as follows:

O

bs

let o
.

The tolerance of the internal resistor can vary typically of 20% within its nominal value of 110k; thus the cut-off frequency will vary accordingly. A minimum capacitance of 1nF for Cload(x, y, z) is required in any case. Filter capacitor selection, Cload (x,y,z)
Cut-off frequency 1 Hz 10 Hz 20 Hz 50 Hz 100 Hz 200 Hz 500 Hz Capacitor value 1500 nF 150 nF 68 nF 30 nF 15 nF 6.8 nF 3 nF

Table 5.

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

1.45 F f t = ------------------------------------ [ H z ] C l o a d ( x, y, z )

10/17

LIS3L02AL

Application hints

4.1

Soldering information
The LGA-8 package is compliant with the ECOPACK, RoHs and "Green" standard.It is qualified for soldering heat resistance according to JEDEC J-STD-020C. Pin 1 indicator is electrically connected to ST pin. Leave pin 1 indicator unconnected during soldering. Land pattern and soldering recommendations are available upon request.

4.2

Output response vs. orientation
Figure 4. Output response vs. orientation
Bottom Top Top

X=1.65V(0g) Y=0.99V (-1g) Z=1.65V (0g)

X=1.65V (0g) Y=1.65V (0g) Z=0.99V (-1g)

X=1.65V (0g) Y=1.65V (0g) Bottom Z=2.31V (+1g) X=0.99V (-1g) Y=1.65V (0g) Z=1.65V (0g) TOP VIEW X=2.31V (+1g) Y=1.65V (0g) Z=1.65V (0g)

X=1.65V(0g) Y=2.31V (+1g) Z=1.65V (0g)

Figure 4 refers to LIS3L02AL device powered at 3.3V.

bs O

let o

Pr e

du o

(s) ct

Ob -

so

te le

ro P

uc d

s) t(

Earth's Surface

11/17

Typical performance characteristics

LIS3L02AL

5
5.1
Figure 5.
20 18 16
Percent of parts (%)

Typical performance characteristics
Mechanical Characteristics at 25C
x-axis Zero-g level at 3.3V Figure 6.
30

x-axis sensitivity at 3.3V

25
Percent of parts (%)

14 12 10 8 6 4 2 0 1.55 1.6 1.65 Zero-g Level (V) 1.7 1.75

20

15

10

5

0 0.62

0.63

0.64

0.65 0.66 0.67 Sensitivity (V/g)

0.68

0.69

Figure 7.
25

y-axis Zero-g level at 3.3V

Figure 8.
25

y-axis sensitivity at 3.3V

20
Percent of parts (%) Percent of parts (%)

20

15

10

5

0 1.55

1.6

1.65 Zero-g Level (V)

1.7

Figure 9.
20 18 16
Percent of parts (%)

z-axis Zero-g level at 3.3V

O

bs

12 10

Percent of parts (%)

14

let o
8 6 4 2 0 1.55

Pr e

du o

(s) ct
1.75

so Ob 15 10 5 0 0.62 25

te le
0.64

ro P

uc d

s) t(
0.7

0.63

0.65 0.66 0.67 Sensitivity (V/g)

0.68

0.69

0.7

Figure 10. z-axis sensitivity at 3.3V

20

15

10

5

1.6

1.65 Zero-g Level (V)

1.7

1.75

0 0.62

0.63

0.64

0.65 0.66 0.67 Sensitivity (V/g)

0.68

0.69

0.7

12/17

LIS3L02AL

Typical performance characteristics

5.2

Mechanical Characteristics derived from measurement in the -40C to +85C temperature range
Figure 12. x-axis sensitivity change Vs temperature
30

Figure 11. x-axis Zero-g level change Vs temperature
35 30 25 20 15 10 5 0 -1

25
Percent of parts (%)

Percent of parts (%)

20

15

10

5

-0.5 0 0.5 Zero-g level change (mg/deg. C)

1

0 -0.05 -0.04 -0.03 -0.02 -0.01 0 0.01 Sensitivity Change(%/deg. C)

0.02

Figure 13. y-axis Zero-g level change Vs temperature
30

Figure 14. y-axis sensitivity change Vs temperature
40 35 30

25
Percent of parts (%) Percent of parts (%)

20

25 20 15 10

15

10

5

0 -1

-0.5 0 0.5 Zero-g level change (mg/deg. C)

Figure 15. z-axis Zero-g level change Vs temperature
30

25
Percent of parts (%)

20

Percent of parts (%)

O

bs

let o
15 10 5 0 -2

Pr e

du o

ct

(s)
1

so Ob 5 40 35 30 25 20 15 10 5

te le

ro P

uc d

s) t(

0.03

0 -0.05 -0.04 -0.03 -0.02 -0.01 0 0.01 Sensitivity Change (%/deg. C)

0.02

0.03

Figure 16. z-axis sensitivity change Vs temperature

-1.5 -1 -0.5 Zero-g level change (mg/deg. C)

0

0 -0.05 -0.04 -0.03 -0.02 -0.01 0 0.01 Sensitivity Change (%/deg. C)

0.02

0.03

13/17

Typical performance characteristics

LIS3L02AL

5.3

Electrical characteristics at 25C
Figure 18. Noise density at 3.3V (z axis)
25

Figure 17. Noise density at 3.3V (x,y axis)
35 30

20
Percent of parts (%) Percent of parts (%)

25 20 15 10 5 0 18

15

10

5

20

22 24 26 28 Noise density (ug/sqrt(Hz))

30

32

0 20

30

40 50 60 Noise density (ug/sqrt(Hz))

70

80

Figure 19. Current Consumption at 3.3V
20 18 16
Percent of parts (%)

14 12 10 8 6 4 2 0 0.4 0.6 0.8 1 current consumption (mA) 1.2 1.4

bs O

let o

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

14/17

LIS3L02AL

Package Information

6

Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Figure 20. LGA-8 Mechanical Data & Package Dimensions
DIM. A1 A2 A3 D1 E1 L L1 M M1 N N1 N2 P1 P2 T1 T2 R h k j 0.615 1.200 0.150 0.050 0.100 1.300 0.740 0.875 0.180 4.850 4.850 0.220 5.000 5.000 1.270 2.540 1.225 0.900 2.000 1.225 1.170 1.350 0.790 1.170 0.640 mm MIN. 1.460 TYP. 1.520 MAX. MIN. inch TYP. MAX.

1.600 0.0574 0.0598 0.0629 1.330 0.260 5.150 5.150 0.0523 0.007 0.0086 0.0102 0.190 0.1968 0.2027 0.190 0.1968 0.2027 0.05 0.1 0.0482 0.925 0.0344 0.0354 0.0364 0.0787 0.0482 0.046 1.400 0.0511 0.0531 0.0551 0.840 0.0291 0.0311 0.033 0.046

OUTLINE AND MECHANICAL DATA

0.665 0.0242 0.0251 0.0261 1.600 0.0472

0.0059 0.0019 0.0039

SOLDER MASK OPENING CAB

METAL PAD

j

j

CAB

h

CAB

P2

O

bs

let o

Pr e

KE

5 4

3 N2

B

E

KD

A2 A1 P1 h CA B seating plane DETAIL A K Detail A

7669231 C

N1

du o
A K (4x) D1

(s) ct
E1 D

so Ob 0.0629
A3

te le

ro P

uc d

s) t(

LGA8 (5x5x1.6mm) Land Grid Array Package

E M K C T1 M1

8 R L T2 == N 7 L1 6 1 2 D

15/17

Revision history

LIS3L02AL

7

Revision history
Table 6.
Date 28-Sep-2005 03-May-2006

Document revision history
Revision 1 2 Initial release. Corrected typo errors. Applied new corporate template layout. Changes

bs O

let o

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

16/17

LIS3L02AL

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.

bs O

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

let o

Pr e

du o

(s) ct

so Ob -

te le

ro P

uc d

s) t(

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com

17/17

Document Number: 11668



All rights reserved © 2010 STMicroelectronics :: Terms Of Use :: Privacy Policy

[an error occurred while processing this directive]