STSJ100NHS3LL
N-channel 30V - 0.0032 - 20A - PowerSO-8TM STripFETTMIII Power MOSFET plus monolithic schottky
General features
Type STSJ100NHS3LL VDSS 30V RDS(on) 0.0042 ID 20A(1)
1. This value is rated accordingly to Rthj-pcb
Optimal RDS(on) x Qg trade-off @ 4.5V Reduced switching losses Reduced conduction losses Improved junction-case thermal resistance
PowerSO-8
Description
This product utilizes the latest advanced design rules of ST's proprietary STripFETTM technology and a propriertary process for integrating a monolithic scottky diode. The new Power MOSFET is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STSJ100NHS3LL Marking 100HS3LPackage PowerSO-8 Packaging Tape & reel
July 2006
Rev 3
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Contents
STSJ100N HS3LL
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 8
3 4 5
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STSJ100NHS3LL
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID(1) ID (2) ID IDM
(3)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = Total dissipation at TC = 25C(1) Operating junction temperature Storage temperature 25C(2) Value 30 16 20 100 12.6 80 70 3 -55 to 150 Unit V V A A A A W W C
PTOT TJ Tstg
1. This value is rated accordingly to Rthj-pcb 2. This value is rated according to Rthj-c 3. Pulse width limited by safe operating area
Table 2.
Symbol Rthj-c Rthj-pcb
(1)
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 1.8 42 Unit C/W C/W
1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.)
Table 3.
Symbol IAV EAS
Avalanche data
Parameter Avalanche current, not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj=25C, ID=IAV, VDD=24V) Value 10 1.8 Unit A J
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Electrical characteristics
STSJ100NHS3LL
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = 24V VGS = 16V VDS= VGS, ID = 1mA VGS= 10V, ID= 10A VGS= 4.5V, ID= 10A VGS= 10V, ID= 10A @125C VGS= 4.5V, ID= 10A @125C 1 Min. 30 500
100
Typ.
Max.
Unit V A nA V
2.5 0.0032 0.0042 0.004 0.0057 0.005 0.006
RDS(on)
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =10V, ID = 15A Min. Typ. 44 4200 700 46.2 27 8.5 7.2 35 Max. Unit S pF pF pF nC nC nC
VDS =25V, f=1MHz, VGS=0
VDD= 15V, ID = 20A VGS = 4.5V, (see Figure 13)
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STSJ100NHS3LL
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD=15V, ID=10A, RG=4.7, VGS=4.5V (see Figure 12) VDD=15V, ID=10A, RG=4.7, VGS=4.5V (see Figure 12) Min. Typ. 16 45 Max. Unit ns ns
Turn-off delay time Fall time
68 8
ns ns
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Q rr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=5A, VGS=0 ISD=20A, di/dt = 100A/s, VDD=25V, Tj=150C (see Figure 17) 30 30 2 Test conditions Min. Typ. Max. 20 80 0.75 Unit A A V ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STSJ100NHS3LL
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
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STSJ100NHS3LL Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STSJ100N HS3LL
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STSJ100NHS3LL
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com
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Package mechanical data
STSJ100NHS3LL
PowerSO-8TM MECHANICAL DATA
mm. MIN. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 2.79 3.8 0.4 4.0 1.27 0.6 8 (max.) 0.1 4 0.01 5 TY P MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 0.18 8 0.22 8 0.0 50 0.1 50 0.1 10 0.1 57 0.0 50 0.0 23 0.1 96 0.2 44 0.02 5 0.01 3 0.00 7 0.01 0 0.00 3 MI N. inch TYP. MAX. 0.0 68 0.0 09 0.0 64 0.0 33 0.0 18 0.0 10 0.0 19
DIM. A a1 a2 a3 b b1 C c1 D E e e3 e4 F L M S
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STSJ100NHS3LL
Revision history
5
Revision history
Table 8.
Date 13-Jan-2006 24-Jan-2006 18-Jul-2006
Revision history
Revision 1 2 3 Initial release. Changed unit on Table 7: Source drain diode Complete version Changes
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STSJ100NHS3LL
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