STD7NM80 - STD7NM80-1 STF7NM80 - STP7NM80
N-channel 800V - 0.95 - 6.5A - TO-220/FP - IPAK - DPAK MDmeshTM Power MOSFET
Features
Type STD7NM80 STD7NM80-1 STF7NM80 STP7NM80
VDSS 800V 800V 800V 800V
RDS(on) < 1.05 < 1.05 < 1.05 < 1.05
ID 6.5A 6.5A 6.5A 6.5A
3
3 1 2
TO-220FP
1
2
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1 3 2
1 3
IPAK
DPAK
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Order codes STD7NM80 Marking D7NM60 D7NM60 F7NM60 P7NM80 Package DPAK IPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube
STD7NM80-1 STF7NM80 STP7NM80
October 2007
Rev 2
1/17
www.st.com 17
Contents
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220 / IPAK DPAK Unit TO-220FP V V 6.5 (1) 4 (1) 26 (1) 25 2500 A A A W V
VDS VGS ID ID IDM (2) PTOT VISO Tj Tstg
Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature Storage temperature 6.5 4 26 90 --
800 30
-55 to 150
C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Parameter TO-220 IPAK / DPAK TO-220FP Unit 5 100 300 62.5 C/W C/W C
Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Tl Maximum lead temperature for soldering purpose 62.5
1.38
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD= 50V) Max Value 1 240 Unit A mJ
3/17
Electrical characteristics
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125C VGS = 30V VDS= VGS, ID = 250A VGS= 10V, ID= 3.25A 3 4 0.95 Min. 800 1 100 100 5 1.05 Typ. Max. Unit V A A nA V
Table 6.
Symbol gfs(1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate input resistance Test conditions VDS =15V, ID= 3.25A Min. Typ. Max. 4 620 460 15 Unit S pF pF pF
VDS =25V, f=1MHz, VGS=0
Rg Qg Qgs Qgd
1.
f=1MHz Gate DC Bias=0 Test signal level=20mV Open drain VDD=640V, ID = 6.5A VGS =10V (see Figure 19)
7
Total gate charge Gate-source charge Gate-drain charge
18 4 11
nC nC nC
Pulsed: pulse duration = 300s, duty cycle 1.5%
4/17
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 400V, ID = 3.25A, RG=4.7, VGS=10V (see Figure 18) Min. Typ. 20 8 35 10 Max. Unit ns ns ns ns
Table 8.
Symbol ISD ISDM VSD(1) t rr Qrr IRRM t rr Qrr IRRM
1.
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5A, VGS=0 ISD = 6.5A,VDD= 50V di/dt=100A/s, Tj=25C (see Figure 20) ISD = 6.5A,VDD= 50V di/dt=100A/s, Tj=150C (see Figure 20) 460 4 17 680 6 17 Test conditions Min. Typ. Max. 6.5 26 1.3 Unit A A V ns C A ns C A
Pulsed: pulse duration = 300s, duty cycle 1.5%
5/17
Electrical characteristics
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for DPAK / IPAK Figure 7.
Thermal impedance for DPAK / IPAK
6/17
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80 Figure 8. Output characterisics Figure 9.
Electrical characteristics Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
7/17
Electrical characteristics
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80 Figure 15. Normalized on resistance vs temperature
Figure 14. Normalized gate threshold voltage vs temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Normalized BVDSS vs temperature
8/17
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Test circuit
3
Test circuit
Figure 19. Gate charge test circuit
Figure 18. Switching times test circuit for resistive load
Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/17
Package mechanical data
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com
10/17
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
11/17
Package mechanical data
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
C A C2
L2
D
B3 B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
12/17
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Package mechanical data
DPAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch
0068772-F
13/17
Package mechanical data
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
14/17
G
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 16.4 50 22. 4 18. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0. 795 0.645 0.724 1. 968 0.881 BULK QTY 2500 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6. 8 10.4 1. 5 1. 5 1.65 7. 4 2.55 3. 9 7. 9 1. 9 40
15.7 16.3
inch MIN. MAX . 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0. 059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1. 574
0.618 0.641
MAX . 10. 6 12. 1 1.6 1. 85 7.6 2. 75 4.1 8.1 2.1
15/17
Revision history
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
6
Revision history
Table 9.
Date 22-Sep-2006 09-Oct-2007
Document revision history
Revision 1 2 First release Added new section: Electrical characteristics (curves) Changes
16/17
STD7NM80-1 - STD7NM80 - STF7NM80 - STP7NM80
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
17/17
|
