STD95N4F3 STP95N4F3 - STU95N4F3
N-channel 40V - 5.4m - 80A - DPAK - TO-220 - IPAK STripFETTM Power MOSFET
Features
Type STD95N4F3 STP95N4F3 STU95N4F3
VDSS 40V 40V 40V
RDS(on) <6.5m <6.5m <6.5m
ID 80A 80A 80A
Pw 110W 110W 110W
1 3
1 3 2
3 2 1
Standard threshold drive 100% avalanche tested
DPAK
TO-220
IPAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature SizeTM"strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
Internal schematic diagram
Applications
Switching application Automotive
Order codes
Part number STD95N4F3 STP95N4F3 STU95N4F3 Marking 95N4F3 95N4F3 95N4F3 Package DPAK TO-220 IPAK Packaging Tape & reel Tube Tube
May 2007
Rev 2
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Contents
STD95N4F3 - STP95N4F3 - STU95N4F3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID (1) ID IDM (2) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 40 20 80 65 320 110 0.73 8 400 -55 to 175 Unit V V A A A W W/C V/ns mJ C
dv/dt (3) EAS (4) Tj Tstg
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature
1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 80 A, di/dt < 400A/s, VDS < V(BR)DSS, Tj < Tjmax 4. Starting Tj = 25C, ID = 40A, VDD = 30V
Table 2.
Symbol Rthj-case Rthj-a
Thermal resistance
Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max 62.5 -300 IPAK 1.36 100 -275 -50 -DPAK C/W C/W C/W C Unit
Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose
1. When mounted on 1inch² FR-4 2Oz Cu board
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Electrical characteristics
STD95N4F3 - STP95N4F3 - STU95N4F3
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS I DSS IGSS VGS(th) RDS(on)
Static
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 40A 2 5.4 Min. Typ. Max. Unit 40 10 100
200
V A A nA V m
4 6.5
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, ID=40A Min Typ. Max. Unit 100 2200 580 40 40 11 8 54 S pF pF pF nC nC nC
VDS =25V, f=1 MHz, VGS=0
VDD=20V, ID = 80A VGS =10V (see Figure 13)
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
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STD95N4F3 - STP95N4F3 - STU95N4F3
Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Rise time Test conditions VDD=20V, ID= 40A, RG=4.7, VGS=10V (see Figure 15) VDD=20V, ID= 40A, RG=4.7, VGS=10V (see Figure 15) Min. Typ. 15 50 Max. Unit ns ns
Turn-off delay time Fall time
40 15
ns ns
Table 6.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VGS=0 ISD=80A, di/dt = 100A/s, VDD=30V, Tj=150C (see Figure 14) 45 60 2.8 Test conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A
VSD (2) trr Q rr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STD95N4F3 - STP95N4F3 - STU95N4F3
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Static drain-source on resistance
Figure 6.
Normalized BVDSS vs temperature
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STD95N4F3 - STP95N4F3 - STU95N4F3 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STD95N4F3 - STP95N4F3 - STU95N4F3
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STD95N4F3 - STP95N4F3 - STU95N4F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STD95N4F3 - STP95N4F3 - STU95N4F3
DPAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch
0068772-F
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STD95N4F3 - STP95N4F3 - STU95N4F3
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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Packaging mechanical data
STD95N4F3 - STP95N4F3 - STU95N4F3
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 16.4 50 22. 4 18. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0. 795 0.645 0.724 1. 968 0.881 BULK QTY 2500 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6. 8 10.4 1. 5 1. 5 1.65 7. 4 2.55 3. 9 7. 9 1. 9 40
15.7 16.3
inch MIN. MAX . 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0. 059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1. 574
0.618 0.641
MAX . 10. 6 12. 1 1.6 1. 85 7.6 2. 75 4.1 8.1 2.1
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STD95N4F3 - STP95N4F3 - STU95N4F3
Revision history
6
Revision history
Table 7.
Date 22-Feb-2007 15-May-2007
Revision history
Revision 1 2 First release Changes on applications Changes
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STD95N4F3 - STP95N4F3 - STU95N4F3
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