STB180N55F3 STP180N55F3
N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFETTM Power MOSFET
Features
Type STB180N55F3 STP180N55F3 VDSS 55V 55V RDS(on) 3.5m 3.8m ID 120A 120A
(1) (1)
Pw 330W 330W
3 1 2
3 1
1. Value limited by wire bonding
Ultra low on-resistance 100% avalanche tested
TO-220
D2PAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "single feature sizeTM" strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Internal schematic diagram
Application
Switching applications
Order codes
Part number STB180N55F3 STP180N55F3 Marking 180N55F3 180N55F3 Package D
2PAK
Packaging Tape & reel Tube
TO-220
June 2007
Rev 2
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Contents
STB180N55F3 - STP180N55F3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB180N55F3 - STP180N55F3
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID (1) ID (1) IDM (2) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 55 20 120 120 480 330 2.2 11 1000 -55 To 175 Unit V V A A A W W/C V/ns mJ C
dv/dt (3) EAS (4) Tj Tstg
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature storage temperature
1. Current limited by package. 2. Pulse width limited by safe operating area. 3. ISD < 120A, di/dt < 900A/s, VDD < V(BR)DSS, TJ < TJMAX 4. Starting Tj=25C, Id=60A, Vdd=40V (see Figure 15 and Figure 16)
Table 2.
Symbol Rthj-case Rthj-a Rthj-pcb(1) Tl
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 -300 TO-220 0.45 -50 D˛PAK Unit C/W C/W C/W C
1. When mounted on FR-4 board, on 1inch˛, 2oz Cu.
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Electrical characteristics
STB180N55F3 - STP180N55F3
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 250A, VGS= 0 VDS= max rating, VDS= max rating,@125C Min. 55 10 100
200
Typ.
Max.
Unit V A A nA V m m
Gate body leakage current VGS = 20V (VDS = 0) Gate threshold voltage Static drain-source on resistance VDS= VGS, ID = 250A VGS= 10V, ID= 60A D˛PAK TO-220 2 2.9 3.2
4 3.5 3.8
Table 4.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V , ID = 60A Min. Typ. 150 6800 1450 15 25 150 110 50 100 30 26 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0 VDD = 27.5V, ID = 60A RG = 4.7 VGS = 10V (see Figure 12, Figure 17) VDD = 44V, ID = 120A, VGS = 10V, (see Figure 13)
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
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STB180N55F3 - STP180N55F3
Electrical characteristics
Table 5.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, di/dt = 100A/s, VDD=35V, Tj=150C (see Figure 14) 60 0.11 3.5 Test conditions Min. Typ. Max. 120 480 1.5 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STB180N55F3 - STP180N55F3
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
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STB180N55F3 - STP180N55F3 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STB180N55F3 - STP180N55F3
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STB180N55F3 - STP180N55F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STB180N55F3 - STP180N55F3
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 T YP M AX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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STB180N55F3 - STP180N55F3
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Packaging mechanical data
STB180N55F3 - STP180N55F3
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STB180N55F3 - STP180N55F3
Revision history
6
Revision history
Table 6.
Date 31-Jan-2007 01-Jun-2007
Revision history
Revision 1 2 First version Complete version Changes
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STB180N55F3 - STP180N55F3
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