T835H, T850H
SnubberlessTM High temperature 8 A Triacs
Main characteristics
Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 35 or 50 Unit
G A2 A1 A2 A2
A V mA
A2 A1 G
G A2 A1
Features
Medium current Triac 150 C max. Tj turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability Packages are RoHS (2002/95/EC) compliant
D2PAK T8xxH-6G
TO-220AB T8xxH-6T
Applications
A1
G A2
Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 8 A triacs provide a very high switching capability up to junction temperatures of 150 C. The heatsink can be reduced, compared to traditional triacs, according to the high performance at given junction temperatures.
TO-220AB Insulated T8xxH-6I
Order codes
Part Numbers T835H-6G T850H-6G T835H-6G-TR T850H-6G-TR T835H-6T T850H-6T T835H-6I T850H-6I Marking T835H 6G T850H 6G T835H 6G T850H 6G T835H 6T T850H 6T T835H 6I T850H 6I
Description
Available in through-hole or surface mount packages, the T835H and T850H triac series are suitable for general purpose mains power AC switching.
TM: Snubberless is a trademark of STMicroelectronics
April 2007
Rev 1
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www.st.com 10
Characteristics
T835H, T850H
1
Table 1.
Symbol IT(RMS)
Characteristics
Absolute Maximum Ratings
Parameter D2PAK, TO-220AB RMS on-state current (full sine wave) TO-220AB Ins Non repetitive surge peak on-state current (full cycle, Tj initial = 25 C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s Tj = 150 C Tj = 25 C Tj = 150 C Tj = 150 C Tc = 135 C Tc = 125 C t = 20 ms t = 16.7 ms 80 A 84 42 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 150 A²s A/s V A W C Value 8 Unit A
ITSM I ²t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj
Table 2.
Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) (dI/dt)c (2)
Electrical Characteristics (Tj = 25 C, unless otherwise specified)
Value Test Conditions Quadrant T835H VD = 12 V RL = 33 VD = VDRM, RL = 3.3 k IT = 500 mA I - III IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 150 C Without snubber, Tj = 150 C MAX. II MIN. MIN. 80 1000 11 110 1500 14 V/s A/ms I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. 35 50 35 1.0 0.15 75 60 mA T850H 50 mA V V mA Unit
1. minimum IGT is guaranted at 20% of IGT max. 2. for both polarities of A2 referenced to A1.
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T835H, T850H Table 3.
Symbol VT (1) Vt0 Rd
(1) (1)
Characteristics
Static Characteristics
Test Conditions ITM = 11 A, tp = 380 s Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25 C Tj = 150 C Tj = 150 C Tj = 25 C Tj = 150 C MAX. MAX. MAX. MAX. MAX. MAX. MAX. Value 1.5 0.80 52 5 3.1 2.5 2.0 mA Unit V V m A
IDRM IRRM
(2)
VD/VR = 400 V (at peak mains voltage) Tj = 150 C VD/VR = 200 V (at peak mains voltage) Tj = 150 C
1. for both polarities of A2 referenced to A1. 2. tp = 380 s.
Table 4.
Symbol Rth(j-c)
Thermal resistance
Parameter D2PAK / TO-220AB Junction to case (AC) TO-220AB Ins S=1 cm2 D2PAK TO-220AB / TO-220AB Ins Junction to ambient 60 3.7 C/W 45 Value 1.85 Unit
Rth(j-a)
Figure 1.
P(W)
10 9 8 7 6
=180
Maximum power dissipation versus Figure 2. RMS on-state current (full cycle)
IT(RMS) (A)
9
RMS on-state current versus case temperature (full cycle)
TO -220AB/D²PAK
8 7 6 5
TO -220AB Insulated
5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 IT(RMS)(A)
180
4 3 2 1 0 0 25 50 75 100 125 150 TC(C)
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Characteristics
T835H, T850H
Figure 3.
RMS on-state current versus ambient temperature (Epoxy printed circuit board FR4, copper thickness = 35 m)
=180 D²PAK SCU=1 cm²
Figure 4.
Variation of thermal impedance versus pulse duration
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
IT(RMS) (A)
1.0E+02
Zth(C/W)
Zth(j-a)
1.0E+01
Zth(j-c)
1.0E+00
Tamb(C) 0.0 0 25 50 75 100 125 150
1.0E-01 1.0E-03
tP(s) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5.
ITM(A)
On-state characteristics (maximum Figure 6. values)
90 80 70 60
Tj=150 C
Surge peak on-state current versus number of cycles
100
ITSM (A)
t=20ms
Non repetitive Tj initial=25 C
One cycle
50
Tj=25 C
10
40 30
Tj max. : Vt0 = 0.80 V Rd = 52 m
Repetitive Tc=125 C
20 10 Number of cycles 0
4.5
VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0
3.5
4.0
1
10
100
1000
Figure 7.
Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t
2.5
Tj initial=25 C
Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)
10000
ITSM(A), I²t (A²s)
IGT, IH, IL [T j] / IGT, IH, IL [T j=25C]
dI/dt limitation: 50 A/s
2.0
IGT
1000
1.5
ITSM
IH & IL
1.0
100
I²t
0.5
tP(ms) 10 0.01
0.0
0.10 1.00 10.00
Tj(C) -40 -20 0 20 40 60 80 100 120 140 160
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T835H, T850H
Characteristics
Figure 9.
Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values)
Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature
(dI/dt)c [T j] / (dI/dt)c [T j=150C]
8 7 6
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
(dI/dt)c [ (dV/dt) c ] / Specified (dI/dt) c
5 4 3 2
0.4 0.2 0.0 0.1 1.0 (dV/dt)C (V/s) 10.0 100.0
1 T j(C) 0 25 50 75 100 125 150
Figure 11. Leakage current versus junction temperature for different values of blocking voltage (typical values)
Figure 12. Variation of thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness = 35 m)
Rth(j-a) (C/W)
80
D²PAK
1.0E+04
IDRM/IRRM(A)
1.0E+03
VDRM=VRRM=600 V
70 60
1.0E+02
VDRM=VRRM=400 V VDRM=VRRM=200 V
50 40 30 20
1.0E+01
1.0E+00
1.0E-01
10
1.0E-02 25 50 75
T j(C) 100 125 150
SCU(cm²) 0 0 5 10 15 20 25 30 35 40
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Ordering information
T835H, T850H
2
Ordering information
T
Triac series Current 8=8A Sensitivity 35 = 35 mA 50 = 50 mA High temperature Voltage 6 = 600 V Package G = D2PAK T = TO-220AB I = TO-220AB Ins Packing Blank = Tube (D2PAK, TO-220AB) -TR = Tape and reel (D2PAK)
8
xx H - 6 y
-TR
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T835H, T850H
Package mechanical data
3
Package mechanical data
Epoxy meets UL94, V0 Recommended torque 0.4 to 0.6 Nm D2PAK dimensions
Dimensions Ref. Millimeters Min. A
A E L2 C2
Table 5.
Inches Min. 0.169 0.098 0.001 0.027 0.048 0.055 Typ. Max. 0.181 0.106 0.009 0.037
Typ.
Max. 4.60 2.69 0.23 0.93
4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 1.40
A1 A2 B
D
L L3 A1
B2 C C2
0.60 1.36 9.35
0.017 0.047 0.352
0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016
B2 B G
C
R
D E
10.28 0.393 5.28 0.192
A2 2mm min. FLAT ZONE
G L
V2
15.85 0.590 1.40 1.75 0.050 0.055
L2 L3 R V2
8
0
8
Figure 13. Footprint (dimensions in mm)
16.90
10.30 1.30
5.08
8.90
3.70
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Package mechanical data Table 6. TO-220AB and TO-220AB Ins dimensions
T835H, T850H
Dimensions Ref. Millimeters Min. A a1
B ØI L F A I4 l3 a1 l2 c2 b2 C
Inches Min. Typ. Max. 0.625 0.147
Typ.
Max.
15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75
15.90 0.598
a2 B b1 b2 C c1 c2
14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147
0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151
a2
e
M
F
c1
b1 e
ØI I4 L l2 l3 M
15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 0.104 1.70 0.044 1.70 0.044 0.102 0.116 0.066 0.066
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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T835H, T850H
Ordering Information
4
Ordering Information
Ordering type T8xxH-6G T8xxH-6G-TR T8xxH-6T T8xxH-6I Marking T8xxH 6G T8xxH 6G T8xxH 6T T8xxH 6I Package D2PAK D PAK TO-220AB TO-220AB Ins
2
Weight 1.5 g 1.5 g 2.3 g 2.3 g
Base qty 50 1000 50 50
Delivery mode Tube Tape and reel Tube Tube
5
Revision history
Date 17-Apr-2007 Revision 1 First issue Description of Changes
9/10
T835H, T850H
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