TS2012
Filter-free stereo 2x2.8W class D audio power amplifer
Features
Operating range from VCC=2.5V to 5.5V Standby mode active low Output power per channel : 1.35W @5V or 0.68W @ 3.6V into 8 with 1% THD+N max. Output power per channel : 2.2W @5V into 4 with 1% THD+N max. Four gains select : 6, 12, 18, 24 dB Low current consumption PSRR: 70dB typ @ 217Hz with 6dB gain. Fast start-up phase: 1ms Thermal shutdown protection QFN20 4x4mm lead-free package
3 4 5 1 2
G1
TS2012IQT - QFN20 (4x4)
Pin connections (top view)
20
Lin+
19
Lin-
18
AGND
17
Rin-
16
Rin+
G0 Rout+ PVCC PGND RoutSTBYL STBYR AVCC
15 14 13 12 11
Lout+ PVCC PGND Lout-
Applications
Cellular phone PDA Flat panel TV
6
NC
7
8
9
10
Description
The TS2012 is a stereo fully differential class D power amplifier. Able to drive up to 1.35W into an 8 load at 5V per channel. It achieves outstanding efficiency compared to typical class AB audio amps. The device has four different gain settings utilizing two discrete pins: G0 and G1. Pop & click reduction circuitry provides low on/off switch noise while allowing the device to start within 1ms. Two standby pins (active low) allow each channel to be switched off independently. The TS2012 is available in a QFN20 package in 4x4 mm dimension. Block diagram
9 3 AVCC PVCC PVCC 13
NC
20 19
LIN + LIN -
Gain Select PWM
H Bridge
LOUT+ LOUT-
2 5
15 1
G0 G1 Oscillator 300k 300k
16 17
RIN + RIN S TB Y L S TB Y R 300k 300k
Gain Select PWM
H Bridge
ROUT+ ROUT-
14 11
7 8
Standby Control
AGND
PGND 4
18
December 2007
Rev 1
12
PGND
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www.st.com 30
Contents
TS2012
Contents
1 2 3 Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 Typical application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1 3.2 Electrical characteristic tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 4.10 Differential configuration principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Gain settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Common mode feedback loop limitations . . . . . . . . . . . . . . . . . . . . . . . . . 22 Low frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Decoupling of the circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Wake-up time (twu) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Shutdown time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Consumption in shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Single-ended input configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Output filter considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5 6 7
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
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TS2012
Absolute maximum ratings and operating conditions
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol VCC Vi Toper Tstg Tj Rthja Pd ESD MM: machine model Latch-up Latch-up immunity VSTBY Standby pin voltage maximum voltage Lead temperature (soldering, 10sec)
1. All voltage values are measured with respect to the ground pin. 2. The magnitude of the input signal must never exceed VCC + 0.3V / GND - 0.3V. 3. The device is protected in case of over temperature by a thermal shutdown active @ 150C. 4. Exceeding the power derating curves during a long period will cause abnormal operation. 5. Human body model: 100 pF discharged through a 1.5 k resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 6. Machine model: a 200 pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 ), done for all couples of pin combinations with other pins floating.
Absolute maximum ratings
Parameter Supply voltage (1) Input voltage
(2)
Value 6 GND to VCC -40 to + 85 -65 to +150 150
(3)
Unit V V C C C C/W
Operating free air temperature range Storage temperature Maximum junction temperature Thermal resistance junction to ambient Power dissipation HBM: human body model(5)
(6)
100 Internally limited(4)
2 200 200 GND to VCC 260
kV V mA V C
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Absolute maximum ratings and operating conditions Table 2.
Symbol VCC VI Vic VSTBY RL VIH VIL Rthja Supply voltage Input voltage range Input common mode voltage Standby voltage input (2) Device ON Device in STANDBY(3) Load resistor GO, G1 - high level input voltage(4) GO, G1 - low level input voltage Thermal resistance junction to ambient (5)
(1)
TS2012
Operating conditions
Parameter Value 2.5 to 5.5 GND to VCC GND+0.5V to VCC-0.9V 1.4 VSTBY VCC GND VSTBY 0.4 4 1.4 VIH VCC GND VIL 0.4 40 Unit V V V V V V C/W
1. I Voo I 40mV max with all differential gains except 24dB. For 24dB gain, input decoupling caps are mandatory. 2. Without any signal on VSTBY, the device is in standby (internal 300k +/-20% pull-down resistor). 3. Minimum current consumption is obtained when VSTBY = GND. 4. Between G0, G1pins and GND, there is an internal 300k (+/-20%) pull-down resistor. When pins are floating, the gain is 6 dB. In full standby (left and right channels OFF), these resistors are disconnected (HiZ input). 5. With 4-layer PCB.
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TS2012
Typical application
2
Figure 1.
Typical application
Typical application schematics
Cs VC C 100nF Input capacitors are optional Cs L 1F VC C VC C C sR 1F
Gain Select Control T S2 0 1 2 AVCC PVCC
Cin Differential Left Input Cin Left INLIN G0 G1 RIN + Cin Differential Right Input Cin Right INST BY R ST BY L Standby RIN LIN + Ga in Select
PVCC
Left IN+
H PW M Bridge
LO UT + LO UT Left speaker
Oscillator
Right IN+
Ga in Select PW M
H Bridge
RO UT + RO UT Right speaker
AG N D
PG N D Cs L 1F
Control
Standby Control
Cs VC C 100nF Input capacitors are optional
PG N D C sR 1F
VC C VC C
Gain Select Control T S2 0 1 2 AVCC PVCC
Cin Differential Left Input Cin Left INLIN G0 G1 RIN + Cin Differential Right Input Cin Right INST BY R ST BY L Standby RIN LIN + Ga in Select
PVCC
Left IN+
H PW M Bridge
LO UT + LO UT LC Output Filter L oa d
Oscillator
Right IN+
Ga in Select PW M
H Bridge
RO UT + RO UT LC Output Filter L oa d
AG N D
PG N D
Control
PG N D
Standby Control
4 LC Output Filter 1 5 H 2F 2F
8 LC Output Filter 30 H 1F 1F
1 5 H
30 H
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Typical application Table 3. External component descriptions
Functional description
TS2012
Components
CS, CSL, CSR Supply capacitor that provides power supply filtering. Cin Input coupling capacitors (optional) that block the DC voltage at the amplifier input terminal. The capacitors also form a high pass filter with Zin (Fcl = 1 / (2 x x Zin x Cin)).
Table 4.
Pin descriptions
Pin name G1 Lout+ PVCC PGND LoutNC STBYL STBYR AVCC NC RoutPGND PVCC Rout+ G0 Rin+ RinAGND LinLin+ Thermal pad Gain select pin (MSB) Left channel positive output Power supply Power ground Left channel negative output No internal connection Standby pin (active low) for left channel output Standby pin (active low) for right channel output Analog supply No internal connection Right channel negative output Power ground Power supply Right channel positive output Gain select pin (LSB) Right channel positive differential input Right channel negative differential input Analog ground Left channel negative differential input Left channel positive differential input Connect the thermal pad of the QFN package to PCB ground Pin description
Pin number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
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TS2012
Electrical characteristics
3
3.1
Table 5.
Symbol ICC ISTBY Voo
Electrical characteristics
Electrical characteristic tables
VCC = +5V, GND = 0V, Vic=2.5V, Tamb = 25C (unless otherwise specified)
Parameters and test conditions Supply current No input signal, no load, both channels Standby current No input signal, VSTBY = GND Output offset voltage Floating inputs, G = 6dB, RL = 8 Output power THD + N = 1% max, f = 1kHz, RL = 4 THD + N = 1% max, f = 1kHz, RL = 8 THD + N = 10% max, f = 1kHz, RL = 4 THD + N = 10% max, f = 1kHz, RL = 8 Total harmonic distortion + noise Po = 0.8W, G = 6dB, f =1kHz, RL = 8 Efficiency per channel Po = 2.2W, RL = 4 +15H Po = 1.25 W, RL = 8+15H Power supply rejection ratio with inputs grounded Cin=1F (1),f = 217Hz, RL = 8, Gain=6dB, Vripple = 200mVpp Channel separation Po = 0.9W, G = 6dB, f =1kHz, RL = 8 Common mode rejection ratio Cin=1F, f = 217Hz, RL = 8, Gain=6dB, VICM = 200mVpp Gain value G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH Single ended input impedance All gains, refered to ground Pulse width modulator base frequency Signal to noise ratio (A-weighting) Po = 1.3W, G = 6dB, RL = 8 Wake-up time Standby time 5.5 11.5 17.5 23.5 24 190 2.2 1.35 2.8 1.65 0.07 Min. Typ. 5 0.2 Max. 8 2 25 Unit mA A mV
Po
W
THD + N
%
Efficiency
81 89 70
%
PSRR
dB
Crosstalk
90
dB
CMRR
70
dB
Gain
6 12 18 24 30 280 99 1 1
6.5 12.5 18.5 24.5 36 370
dB
Zin FPWM SNR tWU tSTBY
k kHz dB
3
ms ms
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Electrical characteristics Table 5.
Symbol
TS2012
VCC = +5V, GND = 0V, Vic=2.5V, Tamb = 25C (unless otherwise specified) (continued)
Parameters and test conditions Output voltage noise f = 20Hz to 20kHz, RL=8 Unweighted (Filterless, G=6dB) A-weighted (Filterless, G=6dB) Unweighted (with LC output filter, G=6dB) A-weighted (with LC output filter, G=6dB) Unweighted (Filterless, G=24dB) A-weighted (Filterless, G=24dB) Unweighted (with LC output filter, G=24dB) A-weighted (with LC output filter, G=24dB) Min. Typ. Max. Unit
VN
63 35 60 35 115 72 109 71
VRMS
1. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinus signal to VCC @ f = 217Hz.
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TS2012 Table 6.
Symbol ICC ISTBY Voo
Electrical characteristics VCC = +3.6V, GND = 0V, Vic=1.8V, Tamb = 25C (unless otherwise specified)
Parameter Supply current No input signal, no load, both channels Standby current No input signal, VSTBY = GND Output offset voltage Floating inputs, G = 6dB, RL = 8 Output power THD + N = 1% max, f = 1kHz, RL = 4 THD + N = 1% max, f = 1kHz, RL = 8 THD + N = 10% max, f = 1kHz, RL = 4 THD + N = 10% max, f = 1kHz, RL = 8 Total harmonic distortion + noise Po = 0.4W, G = 6dB, f =1kHz, RL = 8 Efficiency per channel Po = 1.15W, RL = 4 +15H Po = 0.68W, RL = 8+15H Power supply rejection ratio with inputs grounded Cin=1F (1),f = 217Hz, RL = 8, Gain=6dB, Vripple = 200mVpp Channel separation Po = 0.5W, G = 6dB, f =1kHz, RL = 8 Common mode rejection ratio Cin=1F, f = 217Hz, RL = 8, Gain=6dB, VICM = 200mVpp Gain value G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH Single ended input impedance All gains, referred to ground Pulse width modulator base frequency Signal to noise ratio (A-weighting) Po = 0.65W, G = 6dB, RL = 8 Wake-up time Standby time 5.5 11.5 17.5 23.5 24 190 1.15 0.68 1.3 0.9 0.05 Min. Typ. 3.3 0.2 Max. 6.5 2 25 Unit mA A mV
Po
W
THD + N
%
Efficiency
80 88 70
%
PSRR
dB
Crosstalk
90
CMRR
70
dB
Gain
6 12 18 24 30 280 96 1 1
6.5 12.5 18.5 24.5 36 370
dB
Zin FPWM SNR tWU tSTBY
k kHz dB
3
ms ms
9/30
Electrical characteristics Table 6.
Symbol
TS2012
VCC = +3.6V, GND = 0V, Vic=1.8V, Tamb = 25C (unless otherwise specified) (continued)
Parameter Output voltage noise f = 20Hz to 20kHz, RL=4 Unweighted (Filterless, G=6dB) A-weighted (Filterless, G=6dB) Unweighted (with LC output filter, G=6dB) A-weighted (with LC output filter, G=6dB) Unweighted (Filterless, G=24dB) A-weighted (Filterless, G=24dB) Unweighted (with LC output filter, G=24dB) A-weighted (with LC output filter, G=24dB) Min. Typ. Max. Unit
VN
58 34 55 34 111 70 105 69
VRMS
1. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinus signal to VCC @ f = 217Hz.
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TS2012 Table 7.
Symbol ICC ISTBY Voo
Electrical characteristics VCC = +2.5V, GND = 0V, Vic=1.25V, Tamb = 25C (unless otherwise specified)
Parameter Supply current No input signal, no load, both channels Standby current No input signal, VSTBY = GND Output offset voltage Floating inputs, G = 6dB, RL = 8 Output power THD + N = 1% max, f = 1kHz, RL = 4 THD + N = 1% max, f = 1kHz, RL = 8 THD + N = 10% max, f = 1kHz, RL = 4 THD + N = 10% max, f = 1kHz, RL = 8 Total harmonic distortion + noise Po = 0.2W, G = 6dB, f =1kHz, RL = 8 Efficiency per channel Po = 0.53W, RL = 4 +15H Po = 0.32W, RL = 8+15H Power supply rejection ratio with inputs grounded Cin=1F (1),f = 217Hz, RL = 8, Gain=6dB, Vripple = 200mVpp Channel separation Po = 0.2W, G = 6dB, f =1kHz, RL = 8 Common mode rejection ratio Cin=1F, f = 217Hz, RL = 8, Gain=6dB, VICM = 200mVpp Gain value G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH Single ended input impedance All gains, refered to ground Pulse width modulator base frequency Signal to noise ratio (A-weighting) Po = 0.3W, G = 6dB, RL = 8 Wake-up time Standby time 5.5 11.5 17.5 23.5 24 190 0.53 0.32 0.75 0.45 0.04 Min. Typ. 2.8 0.2 Max. 4 2 25 Unit mA A mV
Po
W
THD + N
%
Efficiency
80 88 70
%
PSRR
dB
Crosstalk
90
CMRR
70
dB
Gain
6 12 18 24 30 280 93 1 1
6.5 12.5 18.5 24.5 36 370
dB
Zin FPWM SNR tWU tSTBY
k kHz dB
3
ms ms
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Electrical characteristics Table 7.
Symbol
TS2012
VCC = +2.5V, GND = 0V, Vic=1.25V, Tamb = 25C (unless otherwise specified)
Parameter Output voltage noise f = 20Hz to 20kHz, RL=8 Unweighted (filterless, G=6dB) A-weighted (filterless, G=6dB) Unweighted (with LC output filter, G=6dB) A-weighted (with LC output filter, G=6dB) Unweighted (filterless, G=24dB) A-weighted (filterless, G=24dB) Unweighted (with LC output filter, G=24dB) A-weighted (with LC output filter, G=24dB) Min. Typ. 57 34 54 33 110 71 104 69 Max. Unit
VN
VRMS
1. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinus signal to VCC @ f = 217Hz.
3.2
Electrical characteristic curves
The graphs shown in this section use the following abbreviations:
RL+ 15H or 30H = pure resistor + very low series resistance inductor Filter = LC output filter (1F+30H for 4 and 0.5F+60H for 8)
All measurements are done with CSL=CSR=1F and CS=100nF (see Figure 2), except for the PSRR where CSL,R is removed (see Figure 3). Figure 2. Test diagram for measurements
CsL (CsR) 1F CS 100nF
Vcc
GND Cin In+ Out+
GND RL 4 or 8 15 H or 30H or LC Filter 5th order 50kHz low-pass filter
1/2 TS2012 InCin GND Out-
Audio Measurement Bandwith < 30kHz
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TS2012 Figure 3. Test diagram for PSRR measurements
VCC Cs 100nF 20Hz to 20kHz
Electrical characteristics
Vripple
Vcc
1 F Cin In+
GN D Out+
GN D RL 4 or 8 15 H or 30 H or LC Filter 5th order 50kHz low-pass filter
1/2 TS2012 InCin 1 F GND GN D Out-
5th order 50kHz low-pass filter reference
RMS Selective Measurement Bandwith =1% of Fmeas
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Electrical characteristics Table 8. Index of graphics
Description Current consumption vs. power supply voltage Current consumption vs. standby voltage Efficiency vs. output power Output power vs. power supply voltage PSRR vs. common mode input voltage PSRR vs. frequency CMRR vs. common mode input voltage CMRR vs. frequency Gain vs. frequency THD+N vs. output power THD+N vs. frequency Crosstalk vs. frequency Power derating curves Star tup and shutdown time Figure Figure 4 Figure 5
TS2012
Figure 6 - Figure 9 Figure 10, Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16, Figure 17 Figure 18 - Figure 25 Figure 26 - Figure 37 Figure 38 - Figure 41 Figure 42 Figure 43, Figure 44
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TS2012
Electrical characteristics
Figure 4.
Current consumption vs. power supply voltage
Figure 5.
Current consumption vs. standby voltage (one channel)
6 TAMB=25C
Current Consumption (mA) Current Consumption (mA)
2.5 N o Loads B o th channels ON
5 4 3 2 1 0 2 .5
2.0 V C C= 5V 1.5 V C C = 3 .6 V V C C= 2.5V 0.5 N o Load T AM B= 25 C 0 1 2 3 4 5
O n e channel ON
1.0
3.0
3 .5
4.0
4.5
5 .0
5.5
0.0
P o w e r Supply Voltage (V)
S ta n d b y Voltage (V)
Figure 6.
1 00
Efficiency vs. output power
125 E ff i ci e n c y
Power Dissipation (mW)
Figure 7.
100
Efficiency vs. output power
500 E f f i c ie n c y
Power Dissipation (mW)
80
Efficiency (%)
100
80
Efficiency (%)
400
60
75
60
300
40
Po w er D i s s i p a t io n
50 V c c= 2 .5 V R L= 4 + 15H F= 1 kH z TH D + N 1% 0 .4
40 Power D is sip atio n V c c= 5V R L = 4 + 15H F=1kHz THD +N 1% 1.5
200
20
25
20
100
0 0.0
0.1
0.2 0 .3 O u tp u t Power (W)
0 0 .5
0 0 .0
0 .5
1.0 O u tp u t Power (W)
0 2.0
Figure 8.
10 0
Efficiency vs. output power
50
Figure 9.
100
Efficiency vs. output power
200
Power Dissipation (mW)
E f fic ie n c y
60
30
60
120
40 P ow er D is s ip a tio n V cc= 2.5V R L = 8 + 15H F = 1 kH z TH D+N 1% 0 .2 5
20
40 P o w er D i s s ip a t i o n 20 V c c= 5V R L = 8 + 15H F=1kHz THD +N 1% 1.0 1 .2
80
20
10
40
0 0.0 0
0 .05
0 .1 0 0.15 0.2 0 O u tp u t Power (W)
0 0.3 0
0 0 .0
0 .2
0 .4
0 .6 0 .8 O u tp u t Power (W)
0 1.4
15/30
Power Dissipation (mW)
80
Efficiency (%)
40
80
Efficiency (%)
E fficie n cy
160
Electrical characteristics
TS2012
Figure 10. Output power vs. power supply voltage
3.5 3.0
Output Power (W)
Figure 11. Output power vs. power supply voltage
2 .0 R L = 8 + 15H F = 1kHz B W < 30kHz T a m b = 25C
2.0 1.5 1.0 0.5 0.0 2 .5
TH D + N = 1 0 %
Output Power (W)
2.5
RL = 4 + 15H F = 1kHz BW < 30kHz Tamb = 25C
T H D + N = 10 %
1 .6
1 .2
0 .8 THD+N=1%
THD+ N= 1%
0 .4
3.0
3 .5 4 .0 4 .5 Power Supply Voltage (V)
5 .0
5 .5
0 .0 2.5
3.0
3 .5 4 .0 4.5 P o w e r Supply Voltage (V)
5 .0
5.5
Figure 12. PSRR vs. common mode input voltage
0 -10 -20
PSR R(dB )
Figure 13. PSRR vs. frequency
0
V ripple = 200mVpp, F = 217Hz R L 4 + 15H, Tamb = 25C V c c= 2.5V V c c= 3 V V cc= 5 V
PSRR (dB)
-10 -20 -30 -40
Inputs grounded, Vripple = 200mVpp R L 4 + 15H, Cin=1F, Tamb=25C V c c = 2.5, 3.6, 5V
-30 G a in = 2 4 d B -40 G a in = 6 d B -50 -60 -70 -80 0 .0 0 .5 1 .0 1 .5 2.0 2 .5 3 .0 3 .5 4 .0 4 .5 5.0
G a in = 2 4 d B -50 -60 -70 -80 20 100
G a in = 6 d B
1k
F re q u e n c y (Hz)
10k
20k
C o m m o n Mode Input Voltage (V)
Figure 14. CMRR vs. common mode input voltage
0 -10 -20
C MRR( dB)
V ic m = 2 0 0 m V p p , F = 217Hz R L 4 + 15H, Tamb = 25C
Figure 15. CMRR vs. frequency
0 -10 -20
CMRR (dB)
V ic m = 2 0 0 m V p p , Vcc = 2.5, 3.6, 5V R L 4 + 15H, Cin=1F, Tamb=25C
-30 -40 -50 -60 -70 -80 0 .0
G a in = 2 4 d B G a in = 6 d B
V cc = 2 .5 V
V cc = 3 V
-30 -40 -50 -60 -70 -80 20 100 1k
F re q u e n c y (Hz)
G a in = 2 4 d B G a in = 6 d B
V cc= 5 V
0 .5
1.0
1 .5
2 .0
2 .5
3 .0
3 .5
4 .0
4 .5
5.0
10k
20k
C o m m o n Mode Input Voltage (V)
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TS2012
Electrical characteristics
Figure 16. Gain vs. frequency
8 no load 6
Gain (dB)
Figure 17. Gain vs. frequency
26 no load 24
Gain (dB)
4 R L=8 +15 H R L =8 +30 H 2 G a in = 6dB V in = 500mV C in = 4.7F T A M B = 25C 20 100 R L=4 +15 H R L =4 +30 H
22
R L=8 +15 H R L=8 +30 H G ain = 24dB V in = 5mV C in = 4.7F T A M B = 25C 20 1 00
20
R L=4 +15 H R L=4 +30 H 1k
F re q u en cy (Hz)
0
18
1k F re q u e n c y (Hz)
10k
20 k
10 k
20 k
Figure 18. THD+N vs. output power
10 R L = 4 + 15H F = 1kHz G = 6dB B W < 30kHz T a m b = 25C
Vc c=5V V c c = 3 .6 V
Figure 19. THD+N vs. output power
10 R L = 4 + 30H F = 1kHz G = 6dB B W < 30kHz T a m b = 25C
V c c = 5V V cc =3 .6V V c c = 2 .5 V
THD + N (%)
1
THD + N (%)
Vc c=2.5V
1
0 .1
0 .1
1E-3
0 .0 1
0.1 O u tp u t Power (W)
1
3
1 E -3
0 .0 1
0 .1 O u tp u t Power (W)
1
3
Figure 20. THD+N vs. output power
10 R L = 8 + 15H F = 1kHz G = 6dB B W < 30kHz T a m b = 25C
V cc =5V V c c = 3 .6 V V c c = 2 .5 V
Figure 21. THD+N vs. output power
10 R L = 8 + 30H F = 1kHz G = 6dB B W < 30kHz T am b = 25C
V c c=5V V cc =3.6V V c c = 2 .5 V
THD + N (%)
1
THD + N (%)
1
0 .1
0 .1
1 E -3
0 .0 1 0.1 O u tp u t Power (W)
1
2
1E-3
0 .0 1 0.1 O u tp u t Power (W)
1
2
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Electrical characteristics
TS2012
Figure 22. THD+N vs. output power
10 R L = 4 + 15H F = 100Hz G = 6dB B W < 30kHz T am b = 25C
Vcc=5V V c c = 3 .6 V
Figure 23. THD+N vs. output power
10 R L = 4 + 30H F = 100Hz G = 6dB B W < 30kHz T a m b = 25C
V cc =5V V c c = 3 .6 V V c c = 2 .5 V
THD + N (%)
V c c=2 .5V
THD + N (%)
1
1
0 .1
0 .1
0 .0 1 1 E-3
0.01
0 .1 O u tp u t Power (W)
1
3
0 .0 1 1E-3
0.01
0.1 O u tp u t Power (W)
1
3
Figure 24. THD+N vs. output power
10 R L = 8 + 15H F = 100Hz G = 6dB B W < 30kHz T a m b = 25C
Vc c=5V
Figure 25. THD+N vs. output power
10 R L = 8 + 30H F = 100Hz G = 6dB B W < 30kHz T a m b = 25C
V c c=5V
V c c = 3 .6 V
V c c = 3.6 V V c c = 2.5 V
THD + N (%)
V c c = 2 .5 V
0 .1
THD + N (%)
1
1
0 .1
0 .0 1 1 E -3
0 .0 1 0 .1 O u tp u t Power (W)
1
2
0 .0 1 1 E -3
0 .0 1 0 .1 O u tp u t Power (W)
1
2
Figure 26. THD+N vs. frequency
10 R L= 4 + 15H G =6dB B W < 30kHz V cc = 2 .5 V T am b = 25C
Figure 27. THD+N vs. frequency
10 R L= 4 + 30H G =6dB B W < 30kHz V cc = 2 .5 V Tam b = 25C
1
THD + N (%)
P o =0 .4W
P o= 0.4 W
1
THD + N (%)
0 .1
0 .1
P o = 0 .2 W
P o =0 .2W
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
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TS2012
Electrical characteristics
Figure 28. THD+N vs. frequency
10 R L= 8 + 15H G =6dB B W < 30kHz V cc = 2 .5 V T am b = 25C
Figure 29. THD+N vs. frequency
10 R L= 8 + 30H G =6dB B W < 30kHz V cc = 2 .5 V Tam b = 25C
P o = 0 .2 W
1
THD + N (%)
1
THD + N (%)
P o = 0 .2 W
0 .1
P o = 0 .1 W
0 .1
P o =0 .1W
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
Figure 30. THD+N vs. frequency
10 R L= 4 + 15H G =6dB B W < 30kHz V cc = 3 .6 V T am b = 25C
Figure 31. THD+N vs. frequency
10 R L= 4 + 30H G =6dB B W < 30kHz V c c= 3.6V T am b = 25C
P o = 0 .9 W
1
THD + N (%)
1
THD + N (%)
P o=0.9W
0 .1
0 .1
P o = 0 .4 5 W P o = 0 .4 5 W
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
Figure 32. THD+N vs. frequency
10 RL=8 + 15H G= 6 d B BW < 30kHz V c c = 3 .6 V Tamb = 25C
Figure 33. THD+N vs. frequency
10 RL=8 + 30H G= 6 d B BW < 30kHz V c c = 3 .6 V Tamb = 25C
Po= 0. 5W
Po= 0. 5W
1
THD + N (%)
1
THD + N (%)
Po= 0. 25W
0 .1
0 .1
P o = 0 .2 5 W
0 .0 1
20
1 00
1000 Frequency (Hz)
10 0 0 0 2 0 k
0 .0 1
20
100
1 0 00 Frequency (Hz)
1 0 0 00 2 0 k
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Electrical characteristics
TS2012
Figure 34. THD+N vs. frequency
10 R L= 4 + 15H G =6dB B W < 30kHz V cc = 5 V T am b = 25C
Figure 35. THD+N vs. frequency
10 R L= 4 + 30H G =6dB B W < 30kHz V c c= 5 V T am b = 25C
P o = 1.5 W
P o = 1.5 W
1
THD + N (%)
1
THD + N (%)
P o = 0 .7 5 W
0 .1
0 .1
P o = 0 .7 5 W
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
0 .0 1
20
100
100 0 F re q u en c y (Hz)
10000 20k
Figure 36. THD+N vs. frequency
10 R L= 8 + 15H G =6dB B W < 30kHz V cc = 5 V T am b = 25C
Figure 37. THD+N vs. frequency
10 R L= 8 + 30H G =6dB B W < 30kHz V cc = 5 V Tam b = 25C
P o= 0.9 W
P o = 0.9 W
1
THD + N (%)
1
THD + N (%)
P o =0 .4 5W
0 .1
0 .1
P o = 0 .4 5 W
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
0 .0 1
20
100
1000 F re q u e n c y (Hz)
1 0000 20k
Figure 38. Crosstalk vs. frequency
0 -20
Crosstalk (dB)
Figure 39. Crosstalk vs. frequency
0 V cc = 2 .5 , 3.6, 5V R L =8 +30 H G ain = 6dB TA M B = 25C
V cc= 2 .5, 3.6, 5V R L=4 +30 H G ain = 6dB T A M B = 25C
Crosstalk (dB)
-20 -40 -60 -80 -100
-40 -60 -80 -100 -120 R -> L
R -> L
L -> R
L -> R 20 100 1k
F re q u e n c y (Hz)
10k
20 k
-120
20
1 00
1k
F re q u e n cy (Hz)
10 k
20k
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TS2012
Electrical characteristics
Figure 40. Crosstalk vs. frequency
0 -20
Crosstalk (dB)
Figure 41. Crosstalk vs. frequency
0 V cc = 2 .5 , 3.6, 5V R L =8 +30 H G ain = 24dB TA M B = 25C
V cc = 2.5, 3.6, 5V R L = 4 + 30 H G ain = 24dB T A M B = 25C
Crosstalk (dB)
-20 -40 -60 -80 -100 -120
-40 R -> L -60 -80 -100 -120 L -> R
R -> L
L -> R 20 1 00 1k
F re q u e n cy (Hz)
20
100
1k
F re q u e n c y (Hz)
10k
20 k
10 k
20k
Figure 42. Power derating curves
Figure 43. Startup and shutdown phase VCC=5V, G=6dB, Cin=1F, inputs grounded
QFN20 Package Power Dissipation (W)
3.5 3.0 W ith 4-layer PCB 2.5 2.0 1.5 1.0 0.5 0.0 N o Heat sink
0
25
50
75
100
12 5
15 0
A m b ien t Temperature (C)
Figure 44. Startup and shutdown phase VCC=5V, G=6dB, Cin=1F, Vin=2Vpp, F=10kHz
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Application information
TS2012
4
4.1
Application information
Differential configuration principle
The TS2012 is a monolithic fully-differential input/output class D power amplifier. The TS2012 also includes a common-mode feedback loop that controls the output bias value to average it at VCC/2 for any DC common mode input voltage. This allows the device to always have a maximum output voltage swing, and by consequence, maximize the output power. Moreover, as the load is connected differentially compared with a single-ended topology, the output is four times higher for the same power supply voltage. The advantages of a full-differential amplifier are:
High PSRR (power supply rejection ratio) High common mode noise rejection Vir tually zero pop without additional circuitry, giving a faster start-up time compared with conventional single-ended input amplifiers Easier interfacing with differential output audio DAC No input coupling capacitors required thanks to common mode feedback loop
4.2
Gain settings
In the flat region of the frequency-response curve (no input coupling capacitor or internal feedback loop + load effect), the differential gain can be set to 6, 12 18, 24 dB depending on the logic level of the G0 and G1 pins, as shown in Table 9. Table 9.
G1 0 0 1 1
Gain settings with G0 and G1 pins
G0 0 1 0 1 Gain (dB) 6 12 18 24 Gain (V/V) 2 4 8 16
Note:
Between pins G0, G1 and GND there is an internal 300k (+/-20%) resistor. When the pins are floating, the gain is 6 dB. In full standby (left and right channels OFF), these resistors are disconnected (HiZ input).
4.3
Common mode feedback loop limitations
As explained previously, the common mode feedback loop allows the output DC bias voltage to be averaged at VCC/2 for any DC common mode bias input voltage. Due to the Vic limitation of the input stage (see Table 2: Operating conditions on page 4), the common mode feedback loop can fulfil its role only within the defined range.
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TS2012
Application information
4.4
Low frequency response
If a low frequency bandwidth limitation is required, it is possible to use input coupling capacitors. In the low frequency region, the input coupling capacitor Cin starts to have an effect. Cin forms, with the input impedance Zin, a first order high-pass filter with a -3dB cutoff frequency (see Table 5 to Table 7):
1 F C L = ------------------------------------------2 Zi n Ci n
So, for a desired cut-off frequency FCL Cin is calculated as follows:
1 C i n = --------------------------------------------2 Zi n FC L
with FCL in Hz, Zin in and Cin in F. The input impedance Zin is for the whole power supply voltage range, typically 30k . There is also a tolerance around the typical value (see Table 5 to Table 7). You can also calculate the tolerance of the FCL:
F C L m a x = 1.103 F C L F C L m i n = 0.915 F C L
4.5
Decoupling of the circuit
Power supply capacitors, referred to as CS,CSL,CSR are needed to correctly bypass the TS2012. The TS2012 has a typical switching frequency of 280kHz and output fall and rise time about 5ns. Due to these very fast transients, careful decoupling is mandatory. A 1F ceramic capacitor between each PVCC and PGND and also between AVCC and AGND is enough, but they must be located very close to the TS2012 in order to avoid any extra parasitic inductance created by a long track wire. Parasitic loop inductance, in relation with di/dt, introduces overvoltage that decreases the global efficiency of the device and may cause, if this parasitic inductance is too high, a TS2012 breakdown. In addition, even if a ceramic capacitor has an adequate high frequency ESR value, its current capability is also important. A 0603 size is a good compromise, particularly when a 4 load is used. Another important parameter is the rated voltage of the capacitor. A 1F/6.3V capacitor used at 5V, loses about 50% of its value. With a power supply voltage of 5V, the decoupling value, instead of 1F, could be reduced to 0.5F. As CS has particular influence on the THD+N in the medium to high frequency region, this capacitor variation becomes decisive. In addition, less decoupling means higher overshoots which can be problematic if they reach the power supply AMR value (6V).
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Application information
TS2012
4.6
Wake-up time (twu)
When the standby is released to set the device ON, there is a delay of 1ms typically. The TS2012 has an internal digital delay that mutes the outputs and releases them after this time in order to avoid any pop noise.
Note:
The gain increases smoothly (see Figure 44) from the mute to the gain selected by the G1 and G0 pin (Section 4.2).
4.7
Shutdown time
When the standby command is set, the time required to set the output stage considered into high impedance and to put the internal circuitry in shutdown mode, is typically 1ms. This time is used to decrease the gain and avoid any pop noise during shutdown.
Note:
The gain decreases smoothly until the outputs are muted (see Figure 44).
4.8
Consumption in shutdown mode
Between the shutdown pin and GND there is an internal 300k (+-/20%) resistor. This resistor forces the TS2012 to be in shutdown when the shutdown input is left floating. However, this resistor also introduces additional shutdown power consumption if the shutdown pin voltage is not 0V. With a 0.4V shutdown voltage pin for example, you must add 0.4V/300k=1.3A in typical (0.4V/240k=1.66A in maximum for each shutdown pin) to the standby current specified in Table 5 to Table 7. Of course, this current will be provided by the external control device for standby pins.
4.9
Single-ended input configuration
It is possible to use the TS2012 in a single-ended input configuration. However, input coupling capacitors are mandatory in this configuration. The schematic diagram in Figure 45 shows a typical single-ended input application.
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TS2012
Application information Figure 45. Typical application for single-ended input configuration
Cs VCC 100nF CsL 1 F VCC VCC CsR 1F
Gain Select Control TS2012 Left Input AVCC PVCC Cin LIN + Cin LIN G0 G1 Right Input Cin RIN + RIN Oscillator Gain Select PWM PVCC
H Bridge
LOUT+ LOUTLeft speaker
Gain Select PWM
H Bridge
ROUT+ ROUTRight speaker
Cin
STBY L STBY R
Standby AGND PGND Control PGND
Standby Control
4.10
Output filter considerations
The TS2012 is designed to operate without an output filter. However, due to very sharp transients on the TS2012 output, EMI radiated emissions may cause some standard compliance issues. These EMI standard compliance issues can appear if the distance between the TS2012 outputs and loudspeaker terminal are long (typically more than 50mm, or 100mm in both directions, to the speaker terminals). As the PCB layout and internal equipment device are different for each configuration, it is difficult to provide a one-size-fits-all solution. However, to decrease the probability of EMI issues, there are several simple rules to follow:
Reduce, as much as possible, the distance between the TS2012 output pins and the speaker terminals. Use a ground plane for "shielding" sensitive wires. Place, as close as possible to the TS2012 and in series with each output, a ferrite bead with a rated current of minimum 2.5A and impedance greater than 50 at frequencies above 30MHz. If, after testing, these ferrite beads are not necessary, replace them by a short-circuit. Allow extra footprint to place, if necessary, a capacitor to short perturbations to ground (see Figure 46).
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Application information Figure 46. Ferrite chip bead placement
TS2012
From output
Ferrite chip bead
to speaker about 100pF gnd
In the case where the distance between the TS2012 output and the speaker terminals is too long, it is possible to have low frequency EMI issues due to the fact that the typical operating frequency is 280kHz. In this configuration, it is necessary to use the output filter represented in Figure 1 on page 5 as close as possible to the TS2012.
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TS2012
Package information
5
Package information
In order to meet environmental requirements, STMicroelectronics offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics trademark. ECOPACK specifications are available at: www.st.com. Figure 47. QFN20 package mechanical drawing
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Package information Table 10. QFN20 package mechanical data
Dimensions in mm Ref Min A A1 A2 A3 b D D2 E E2 e L ddd 0.45 0.3 3.85 0.18 3.85 0.8 Typ 0.9 0.02 0.65 0.25 0.23 4 2.6 4 2.6 0.5 0.4 0.55 0.5 0.08 4.15 0.3 4.15 Max 1 0.05 1
TS2012
Figure 48. QFN20 package footprint
F O O TP RINT DATA (mm) A 4. 55 B 4. 55 C 0. 50 D 0. 35 E 0. 65 F 2. 45 G 0. 40
Note:
The QFN20 package has an exposed pad E2 x D2. For enhanced thermal performance, the exposed pad must be soldered to a copper area on the PCB, acting as a heatsink. This copper area can be electrically connected to pin 4, 12, 18 (PGND, AGND) or left floating.
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TS2012
Ordering information
6
Ordering information
Table 11. Order code
Temperature range -40C to +85C Package QFN20 Packaging Tape & reel Marking K12
Part number TS2012IQT
7
Revision history
Table 12.
Date 17-Dec-2007
Document revision history
Revision 1 First release. Changes
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TS2012
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