STB80NF55-08 STP80NF55-08 - STW80NF55-08
N-channel 55 V - 0.0065 - 80 A - TO-220 - D2PAK - TO-247 STripFETTM Power MOSFET
Features
Type STB80NF55-08 STP80NF55-08 STW80NF55-08
VDSS 55 V 55 V 55 V
RDS(on) max < 0.008 < 0.008 < 0.008
ID 80 A 80 A 80 A TO-247
1 2 3
TO-220
Standard threshold drive
3 1
Application
Switching applications
D²PAK
Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram
Table 1.
Device summary
Order codes Marking B80NF55-08 P80NF55-08 W80NF55-08 Package D²PAK TO-220 TO-247 Packaging Tape & reel Tube Tube
STB80NF55-08 STP80NF55-08 STW80NF55-08
March 2008
Rev 1
1/15
www.st.com 15
Contents
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuos) at TC = 25 C Drain current (continuos) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 55 20 80 80 320 300 2 -55 to 175 Unit V V A A A W W/C C
ID (1) IDM
(2)
PTOT
Tj Tstg
Operating junction temperature Storage temperature
1. Current limited package 2. Pulse width limited by safe operating area
Table 3.
Symbol Rthj-case Rthj-amb Tl
Thermal resistance
Value Parameter D2PAK Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 35(1) 300 TO-220 0.5 62.5 50 TO-247 C/W C/W C Unit
1. When mounted on 1 inch2 FR-4 board, 2 oz Cu
Table 4.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (star ting Tj = 25 C, ID = IAR, VDD = 30 V) Max value 40 1000 Unit A mJ
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Electrical characteristics
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
2
Electrical characteristics
(TCASE = 25 C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = max rating VDS = max rating@125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 40 A 2 3 Min. 55 1 10 100 4 Typ. Max. Unit V A A nA V
0.0065 0.008
Table 6.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V , ID = 18 A VDS = 25 V, f = 1 MHz, VGS= 0 VDD= 27 V, ID = 80 A VGS =10 V (see Figure 14) Min. Typ. 40 3740 830 265 112 20 40 155 Max. Unit S pF pF pF nC nC nC
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 27 V, ID = 40 A RG = 4.7 VGS = 10 V (see Figure 13) Min. Typ. 20 110 75 35 Max. Unit ns ns ns ns
Table 8.
Symbol ISD ISDM (1) VSD trr(2) Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A,VDD = 25 V di/dt=100 A/s, Tj =150 C (see Figure 18) 80 230 5.7 Test conditions Min Typ. Ma x 80 320 1.5 Unit A A V ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
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STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
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Test circuit
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
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Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:: www.st.com
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Package mechanical data
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Package mechanical data
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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Package mechanical data
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
D²PAK (TO-263) mechanical data
mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
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Packaging mechanical data
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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Revision history
STP80NF55-08 - STB80NF55-08 - STW80NF55-08
6
Revision history
Table 9.
Date 03-Mar-2008
Document revision history
Revision 1 First release Changes
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