STB150NF04
N-channel 40 V - 0.005 - 80 A - D2PAK STripFETTMII Power MOSFET
Features
Type STB150NF04
VDSS 40 V
RDS(on) max < 0.007
ID 80 A
100% avalanche tested Standard level gate drive For through-hole version contact sales office
3 1
D˛PAK
Application
Switching applications
Description
This Power MOSFET is the latest development of STMicroelectronis unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking B150NF04 Package D˛PAK Packaging Tape and reel
Order code STB150NF04
July 2008
Rev 1
1/11
www.st.com 11
Electrical ratings
STB150NF04
1
Electrical ratings
Table 2.
Symbol VDS VGS ID(1) ID (1) IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 40 20 80 80 320 300 2 2 0.6 -55 to 175 Max. operating junction temperature Unit V V A A A W W/C V/ns J C
Ptot dv/dt (3) EAS
(4)
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature
Tstg Tj
1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD 80A, di/dt 300A/s, VDD=80%V(BR)DSS 4. Starting Tj = 25 C, ID=40 A, VDD=30 V
Table 3.
Symbol Rthj-case Rthj-pcb
(1)
Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 0.5 35 Unit C/W C/W
1. When mounted on 1inch˛ FR-4 board, 2 oz of Cu
2/11
STB150NF04
Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = max rating VDS = max rating @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 40 A 2 0.005 Min. 40 1 10 100 4 0.007 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs(1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 15 A VDS = 25 V, f =1 MHz VGS=0 VDD=32 V, ID=80 A, VGS=10 V (see Figure 14) Min. Typ. 90 3650 1145 400 118 20 45 150 Max. Unit S pF pF pF nC nC nC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
3/11
Electrical characteristics
STB150NF04
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 25 V, ID = 40 A , RG = 4.7 VGS = 10 V (see Figure 13) Min. Typ. 15 150 70 45 Max. Unit ns ns ns ns
Table 7.
Symbol ISD ISDM(1) VSD
(2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) ISD = 80 A, VGS = 0 ISD = 80 A, VGS = 0 ISD= 80 A, di/dt=100 A/s VDD = 25 V, Tj = 150 C (see Figure 15) Test conditions Min Typ. Max 80 320 Unit A A ns nC A A A
Forward on voltage
1.3
t rr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
73 170 4.6
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
4/11
STB150NF04
Electrical characteristics
2.1
Figure 2.
ID(A)
Electrical characteristics (curves)
Safe operating area
HV42440
TJ=150C TC=25C Single pulse
Figure 3.
Thermal impedance
100
is ea ) Ar (on is RDS th in ax ion by M rat pe ited O im L
100s 1ms
10
10ms
1
0.1 0.1
1
10
VDS(V)
Figure 4.
Output characteristics
HV42470 VGS=10V
Figure 5.
ID(A) 225 200
Transfer characteristics
HV42475
ID(A) 225 200 175 150 125 100 75 50 25 0 0 1 2 3 4 5 6 7 6V
VDS=10V
175 150
5V
125 100 75
4V
50 25
8
9 VDS(V)
0
0
1
2
3
4
5
6
7
8
9 VGS(V)
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
HV42430
RDS(on) () VGS=10V 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 10 20 30 40 50 60 70 80 ID(A)
5/11
Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9.
C(pF)
9000 8000 7000 6000 5000 4000 3000 2000 f=1MHz VGS=0
STB150NF04 Capacitance variations
HV42420
Ciss
Coss 1000 0 Crss 0 5 10 15 20 25 30 VDS(V)
Figure 10. Normalized gate threshold voltage vs temperature
VGS(th) (norm) HV42410 VDS=VGS ID=250A
Figure 11. Normalized on resistance vs temperature
1.00
0.90
0.80
0.70
0.60 -75 -50 -25 0 25 50 75 100 125 150 175 TJ(C)
Figure 12. Source-drain diode forward characteristics
6/11
STB150NF04
Test circuit
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
7/11
Package mechanical data
STB150NF04
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
8/11
STB150NF04
Package mechanical data
D˛PAK (TO-263) mechanical data
mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
9/11
Revision history
STB150NF04
5
Revision history
Table 8.
Date 01-Jul-2008
Document revision history
Revision 1 First release Changes
10/11
STB150NF04
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
11/11
|
