BUL381D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE TO-220
3 1 2
APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES
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DESCRIPTION The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM Ptot Tstg Tj Parameter C o ll e c t o r -E m i t t e r Voltage (V B E = 0) C o ll e c t o r -E m i t t e r Voltage (I B = 0) Em it t e r -B a s e Voltage (I C = 0) C o ll e c t o r Current C o ll e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T o t a l Dissipation at T c = 25 o C St o r a g e Temperature M a x . Operating Junction Temperature Value 800 400 9 5 8 2 4 70 - 6 5 to 150 150 U ni t V V V A A A A W
o o
C C
July 2003
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BUL381D
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m a l Resistance Junction-Case T h e r m a l Resistance Junction-Ambient Max Max 1 .7 8 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S IC EO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = 0) C o l l e c t o r Cut-off C u r r e n t (I B = 0) T e s t Conditions V C E = 800 V V C E = 800 V V C E = 400 V I C = 100 mA L = 25 mH 400 T j = 125 o C Min. Typ. Ma x. 10 0 50 0 25 0 Unit A A A V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) VEBO V C E(s at ) E m i t t e r- B a s e Voltage ( I C = 0) C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage D C Current Gain R E S I S T IV E LOAD S t o r a g e Time F a l l Time I N D U C T I V E LOAD S t o r a g e Time F a l l Time
I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A I B = 0.2 A I B = 0.4 A I B = 0.75 A I B = 0.2 A I B = 0.4 A
9 0.5 0.7 1.1 1.1 1.2 8 10 1.5 2.5 0.8 1.3 100 2.5
V V V V V V
V B E (s at ) hFE
IC = 2 A VCE = 5 V I C = 10 mA VC E = 5 V IC = 2 A V C C = 250 V t p = 30 s I B 1 = - I B 2 = 0.4 A IC = 2 A V B E ( o f f ) = -5 V V C L = 250 V T j = 125 o C I B 1 = 0.4 A RBB = 0 L = 200 H
ts tf ts tf Vf
s s s ns V
D i o d e Forward Voltage I C = 2 A
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
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BUL381D
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
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BUL381D
Reverse Biased SOA
Inductive Load Switching Test Circuit
1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier
Resistive Load Switching Test Ciurcuit
1 ) Fast electronic switch 2 ) Non-inductive Resistor
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BUL381D
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL381D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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