T820W T830W
8A SNUBBERLESSTM TRIAC
MAIN FEATURES Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 and 800 20 to 30 Unit A V mA
G
A2
A1
DESCRIPTION Based on ST' Snubberless technology providing high commutation performances, the T820-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as washing-machines drum motor controllers. They comply with UL standards (ref. E81734).
A1 A2
G
ISOWATT220AB (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM It dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj
2
Parameter RMS on-state current (Full sine wave) Non repetitive surge peak on-state current (Full cycle, Tj initial = 25C ) I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr 100ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
2
Value Tc= 100C F = 50Hz F = 60Hz F = 120 Hz tp = 10ms tp = 20s t = 20ms t = 16.7ms Tj = 125C Tj = 25C Tj = 125C Tj = 125C 8 100 105 55 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 125
Unit A A A2s A/s V A W C
tp = 10 ms
March 2004 - Ed: 2
1/5
T820W / T830W
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol IGT
(1)
Test Conditions VD=12V RL=33 VD=VDRM RL=3.3k Tj = 125C IT= 250mA IG = 1.2IGT
Quadrant I-II-III I-II-III I-II-III MAX. MAX. MIN. MAX. I - III II MAX. MAX. MIN. MIN.
T820 20 1.3 0.2 35 50 60 300 4.5
T830 30
Unit mA V V
VGT VGD IH
(2)
50 70 80 500 5.5
mA mA mA V/s A/ms
IL
(2)
dV/dt
VD=67% VDRM Gate open Tj = 125C Without snubber Tj = 125C
(dI/dt)c (2)
STATIC CHARACTERISTICS Symbol VTM(2) VTO
(2)
Test Conditions ITM = 11A tp = 380s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX
Value 1.4 0.85 40 5 1
Unit V V m A mA
Threshold voltage Dynamic resistance VDRM = VRRM
Rd(2) IDRM IRRM
Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case (AC) Parameter Value 60 3.1 Unit C/W C/W
PRODUCT SELECTOR Part Number T820-600W T820-800W T830-600W T830-800W Voltage 600V 800V 600V 800V Sensitivity 20 mA 20 mA 30 mA 30 mA Type Snubberless Snubberless Snubberless Snubberless Package ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB
2/5
T820W / T830W
ORDERING INFORMATION
T
TRIAC SERIES CURRENT: 8A
8
xx
-
x00
W
PACKAGE: W: ISOWATT220AB VOLTAGE: 600: 600V 800: 800V
SENSITIVITY: 20: 20mA 30: 30mA
OTHER INFORMATION Part Number T820-600W T820-800W T830-600W T830-800W Marking T820600W T820800W T830600W T830800W Weight 2.3 g 2.3 g 2.3 g 2.3 g Base quantity 50 50 50 50 Packing mode Tube Tube Tube Tube
Fig. 1: Maximum power dissipation versus RMS on-state current.
P(W)
9
=180
Fig. 2: RMS on-state current versus case temperature.
IT(RMS)(A)
10 9 8 7 6
=180
8 7 6 5
5
4 3 2 1 0 0 1 2 3 4 5 6 7 8
180
4 3
IT(RMS)(A)
2 1 0 0 25 50 75 100 125
Tc(C)
Fig. 3: Relative variation of thermal impedance versus pulse duration.
K=[Zth/Rth]
1.E+00
Z t h ( j -c )
Fig. 4: On-state characteristics (maximum values).
ITM(A)
100
Tj=25C
Tj=125C
1.E-01
Z t h ( j -a )
10
1.E-02
tp(s)
1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
1 0 1 2
VTM(V)
3 4
Tj max. : Vto = 0.85 V Rd = 40 m
5
6
3/5
T820W / T830W
Fig. 5: Surge peak on-state current versus number of cycles.
ITSM(A)
110 100 90 80 70 60 50 40 30 20 10 0 1 10 100 1000
Repetitive Tc=100C Non repetitive Tj initial=25C t=20ms
Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and c o r r e s p o n d i n g v a l u e o f I 2t .
ITSM(A), I t(A s)
1000
Tj initial=25C
2 2
dI/dt limitation: 50A/s
ITSM
100
I²t
Number of cycles
10 0.01 0.10
tp(ms)
1.00 10.00
Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25C]
3.0 2.5 2.0
IGT
Fig. 8: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0 1.8 1.6 1.4 1.2 1.0
1.5 1.0 0.5
IH & IL
0.8 0.6 0.4
Tj(C)
0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.2 0.0 0.1 1.0
dV/dt (V/s)
10.0 100.0
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125C]
8 7 6 5 4 3 2 1
Tj(C)
0 0 25 50 75 100 125
4/5
T820W / T830W
PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 15.90 9.00 3.00 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 16.40 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 1.125 0.386 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.646 0.366 0.126
16.00 typ.
0.630 typ.
Cooling method : C Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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