SD2900
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
s s s s s s s s
GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY M113 epoxy sealed ORDER CODE BRANDING SD2900 SD2900
DESCRIPTION The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz
PIN CONNECTION
1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
S ym b o l V DG R VGS ID P DI S S Tj TSTG P a r am e t e r D r a in - G a te Voltage (R G S = 1M) G a t e -S o u rc e Voltage D r a in Current P o w e r Dissipation M a x . Operating Junction Temperature S t o ra g e Temperature Va l u e 65 65 20 900 21 . 9 200 - 6 5 to 150
3.Gate 4. Source
U ni t V V V mA W
o o
V ( B R ) D S S D r a in Source Voltage
C C
THERMAL DATA
R t h ( j- c) R t h(c -s ) J un c t i on - C a s e Thermal Resistance C as e - H e at s i n k Thermal Resistance 8 .0 0 . 30
o o
C/W C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
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SD2900
ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC
Sy m b o l V (BR )DSS I DS S IGSS V GS ( Q) V DS ( O N) g FS CISS COSS CR SS V G S = 0V V G S = 0V V G S = 20V V D S = 10V V G S = 10V V D S = 10V V G S = 0V V G S = 0V V G S = 0V P a r a m et e r I D S = 5 mA V D S = 28 V VDS = 0 V I D = 10 mA I D = 0.5 A I D = 0.5 A V D S = 28 V V D S = 28 V V D S = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.2 8.5 7.8 1.4 1.0 Min. 65 0.5 1.0 6.0 1.6 Typ. M a x. Unit V mA A V V mho pF pF pF
REF. 1021307I
DYNAMIC
Sy m b o l P O UT GPS D f = 400 MHz f = 400 MHz f = 400 MHz P a r a m et e r V D D = 28 V V D D = 28 V V D D = 28 V V D D = 28 V P out = 5 W P out = 5 W P out = 5 W I D Q = 50 mA I D Q = 50 mA I D Q = 50 mA I D Q = 50 mA Min. 5 13.5 45 30 : 1 16 50 Typ. M a x. Unit W dB % VSWR
Lo a d f = 400 MHz M is m a t c h All Angles
IMPEDANCE DATA
F R EQ . 4 00 MHz
Z I N () 8. 6 - j 24.6
Z D L () 22 . 6 + j 27.0
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SD2900
TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage
GC8313 0
Maximum Thermal Resistance vs Case Temperature
10
GC8 3 14 0
100
C , CAPACITANCES (pF)
f = 1 MHz
9.5
RTH(j-c) (C/W)
9
10
Ciss
Cos s
8.5
8
Cr s s
7.5
1 0 10 20 30
25
45
65
85
VDS. DRAIN-SOURCE VOLTAGE (VOLTS)
Tc, CASE TEMPERATURE (C)
Drain Current vs Gate Voltage
Gate-Source Voltages vs Case Temperature
GC 83 15 0
1000
VGS , GATE-SOURCE VOLTAGE (NORMALIZED)
GC8 3 1 6 0
1 .0 4
ID = 7 50 m A
ID, DRAIN CURRENT (mA)
T = -20C
800
T = 25C VD S = 10V
1 .0 2
ID = 5 00 m A
600
T = 80C
1
ID = 2 00 m A
400
0 .9 8
ID = 1 00 m A
200
0 .9 6
V DD = 10 V ID = 5 0 m A
0 5 6 7 8 9 10
0 .9 4 -2 5
0
25
50
75
1 00
T c, CASE TEMPERATURE (C)
VGS, GATE-SOURCE VOLTAGE (VOLTS)
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SD2900
TYPICAL PERFORMANCE Output Power vs Input Power
GC8 3 18 0
Output Power vs Input Power
GC8 31 70
8
10
Pou t, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Vdd = 28 V
8
6
Tc= 25C f = 400 MHz IDQ = 50 mA
IDQ = 50 mA VDD = 28 V f = 400 MHz
T = 25 C
T = -20C
6
T = 80C
4
4
Vdd = 13.5 V
2
2
0 10 50 90 130 170 210 250
0
0 .0 1 0 .0 6 0 .1 0 0 .1 5 0 .1 9 0 .2 4
Pin , INPUT POWER (mW)
Pin, INPUT POWER (W)
Output Power vs Voltage Supply
GC8 3 19 0
Output Power vs Gate Voltage
GC8 32 00
8
6
P out, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (W)
Pi n =0 .24 W
T = -20C
6
IDQ = 50 mA f = 400 MHz Pi n = 0.12 W
T = 25C
4
VDD = 28 V IDQ = 50 mA f = 400 MHz Pi n = Cons ta nt
T = 80C
4
Pi n =0 .06 W
2
2
0 13 18 23 28
0 1.5
3
4.5
6
V DD, SUPPLY VOLTAGE (VOLTS)
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Power Gain vs Output Power
GC8321 0
Efficiency vs Output Power
GC83 2 20
18
70
60
PG, POWER GAIN (dB)
E FF IC IENC Y (%)
17
50
16
Tc = 25C f = 400 MHz IDQ = 50 m A
40
T c= 25C f = 400 MHz IDQ = 50 mA
30
15
20
14 0 1 2 3 4 5 6 7 8
10 0 2 4 6 8
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
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SD2900
400 MHz Test Circuit Schematic
400 MHz Test Circuit Component Part List
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SD2900
400 MHz Test Circuit Photomaster
REF. 1021498C
Production Test Fixture
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SD2900
M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA
mm MIN. A B C D E F G H I J K 6.22 3.05 5.59 19.81 18.29 24.64 9.40 0.10 2.16 4.06 TYP. MAX. 5.84 20.83 18.54 24.89 9.78 0.15 2.67 4.57 7.14 6.48 3.30 0.245 0.120 MIN. 0.220 0.780 0.720 0.970 0.370 0.004 0.085 0.160 inch TYP. MAX. 0.230 0.820 0.730 0.980 0.385 0.006 0.105 0.180 0.281 0.255 0.130
DIM.
Controlling Dimension: Inches
1010936D
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SD2900
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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