SD2903
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
s s s s s s s s
GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL
DESCRIPTION The SD2903 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz
M229 (epoxy sealed) ORDER CODE BRANDING SD2903 SD2903
PIN CONNECTION
1. Drain 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol V DG R VGS ID P DI S S Tj TSTG Parameter D r a i n - Ga te Voltage G a t e - S o u r c e Voltage D r a i n Current P o w e r Dissipation M a x . Operating Junction Temperature S t o r a g e Temperature (RGS = 1 M) Value 65 65 20 5 100 200 - 6 5 to 150
4.Gate 5.Gate
U ni t V V V A W
o o
V ( B R ) D S S D r a i n Source Voltage
C C
THERMAL DATA
R t h ( j- c) R t h(c -s ) J u n c ti o n - C a s e Thermal Resistance C a s e -H e a t si n k Thermal Resistance 1.75 0.40
o o
C/W C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
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SD2903
ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section)
Symbol V (BR )DSS I DS S IGSS V GS ( Q) V DS ( O N) gFS CISS COSS CR SS V G S = 0V V G S = 0V V G S = 20V V D S = 10V V G S = 10V V D S = 10V V G S = 0V V G S = 0V V G S = 0V P a r a m e te r I D S = 15 mA V D S = 28 V V DS = 0 V I D = 30 mA I D = 1.5 A I D = 1.5 A V D S = 28 V V D S = 28 V V D S = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.6 23 18 3.5 1.0 Min. 65 1.5 1.0 6.0 1.6 Typ. Ma x. Unit V mA A V V mho pF pF pF
REF. 1021309H
DYNAMIC (Total Device)
Symbol P O UT GPS D f = 400 MHz f = 400 MHz f = 400 MHz P a r a m e te r V D D = 28 V V D D = 28 V V D D = 28 V V D D = 28 V P o u t = 30 W P o u t = 30 W P o u t = 30 W I D Q = 100 mA I D Q = 100 mA I D Q = 100 mA I D Q = 100 mA Min. 30 13 45 5:1 15 50 Typ. Ma x. Unit W dB % VSWR
Load f = 400 MHz M i s m a t c h All Angles
IMPEDANCE DATA
F R EQ . 4 0 0 MHz
Z I N () 4 . 6 - j 12
Z D L () 1 3 . 6 + j 10
Measured Gate to Gate and Drain to Drain, Respectively.
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SD2903
TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage
GC8 3770
Maximum Thermal Resistance vs Case Temperature
GC83780
100
2.1
C , CAPACITANCES (pF)
Ci ss
f = 1 MHz
10
Coss
RTH(j-c) (C/W)
30
1.9
Crss
1 0 10 20
1.7 25 45 65 85
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Tc, CASE TEMPERATURE (C)
Drain Current vs Gate Voltage
GC83790
Gate-Source Voltages vs Case Temperature
T = -20C
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
5
G C83800
1.05
I D = 3A
I D, DRAIN CURRENT (A)
4
VDS = 10V T = 25C
ID = 2 A
1
I D = 1.25 A
3
T = 80C
2
I D = 500 mA
0.95
VDD = 10V I D = 25 mA
1
0 5 6 7 8 9 10
0.9 -25
0
25
50
75
10 0
Tc, CASE TEMPERATURE (C)
VG S, GATE-SOURCE VOLTAGE (VOLTS)
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SD2903
TYPICAL PERFORMANCE Output Power vs Input Power
GC8 381 0
Output Power vs Input Power
GC8382 0
40
Vdd = 28 V
50
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
T = 25 C
T = -20C
40
30
30
T = 80C
20
T c= 25C f = 400 MHz IDQ = 100 mA
20
IDQ = 100 mA VDD = 28 V f = 400 MHz
10
Vdd = 13.5 V
10
0 0.0 5
0.4 5
0.8 5
1.2 5
0 0.0 5
0.4 5
0.8 5
1.2 5
Pin, INPUT POWER (W)
Pin, INPUT POWER (W)
Output Power vs Voltage Supply
Output Power vs Gate Voltage
40 Po ut, OUTPUT POWER (WATTS)
GC83 840
GC83830
40
Pout , OUTPUT POWER (WATTS)
T = -20 C T = 25 C
Pin = 1.2 W
30
30
T = 80 C
IDQ = 100 mA f = 400 MHz
Pin = .6 W
20
20
Pin = .3 W
10
10
VD D = 28V ID Q = 100m A f = 400MHz P in = Constant
0 13 18 23 28
0 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 7
VDD, SUPPLY VOLTAGE (VOLTS)
Power Gain vs Output Power
GC8 385 0
Efficiency vs Output Power
GC8 3860
20
60
50
PG , POWER GAIN (dB)
18
EFFICIENCY (%)
40
30
T c= 25C f = 400 MHz IDQ = 100 mA
16
T c = 25C f = 400 MHz IDQ = 100 mA
20
10 14 0 10 20 30 40 0 10 20 30 40
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
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SD2903
400 MHz Test Circuit Schematic
400 MHz Test Circuit Component Part List
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SD2903
400 MHz Test Circuit Photomaster
REF. 1022349A
Production Test Fixture
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SD2903
M229 (.230 x .360 WIDE 4L BAL N/HERM W/FLG) MECHANICAL DATA
mm MIN. A B C D E F G H I J K L 18.29 24.64 9.02 0.10 3.18 4.06 5.84 4.45 1.40 11.94 5.72 2.92 18.54 24.89 9.27 0.15 3.43 4.32 6.60 0.720 0.970 0.355 0.004 0.125 0.160 0.230 TYP. MAX. 4.70 1.65 12.95 6.10 MIN. 0.175 0.055 0.470 0.225 0.115 0.730 0.980 0.365 0.006 0.135 0.170 0.260 inch TYP. MAX. 0.185 0.065 0.510 0.240
DIM.
Controlling dimension : Inches
1008194C
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SD2903
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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