BULK128D-B
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s s
s
STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED SOT-82
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APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FL YBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS
s
DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM P tot Tstg Tj August 2001 P a r am e t e r C ol l e c t o r- E m i t t er Voltage (V B E = 0) C ol l e c t o r- E m i t t er Voltage (I B = 0) Em i tt e r -B a s e Voltage (I C = 0, IB = 2 A, t p < 10s, T j < 150 o C ) C ol l e c t o r Current C ol l e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T ot a l Dissipation at T c = 25 o C St o r a ge Temperature M a x. Operating Junction Temperature Value 700 400 BVEBO 4 8 2 4 55 - 65 to 150 150 U ni t V V V A A A A W o C o C 1/7
BULK128D-B
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-Case T h e r m al Resistance Junction-Ambient Max Max 2. 2 7 80
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE S IC EO P a r a m et e r C o l l e c t or Cut-off C u r re n t (V B E = -1.5 V) C o l l e c t or - E m i t te r L e a k ag e Current ( I B = 0) E m i t t e r- B a s e B r e ak d o w n Voltage ( I C = 0) T e s t Conditions V C E = 700 V V C E = 700 V V C E = 400 V T C = 125 o C Min. Typ. M a x. 100 500 250 Unit A A A
BVEBO
I E = 10 mA
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V
V CE O ( s u s ) C o l l e c t or - E m i t te r S u s t ai n i n g Voltage ( I B = 0) V C E(s at ) C o l l e c t or - E m i t te r S a t u ra t i o n Voltage B a s e -E m i t t e r S a t u ra t i o n Voltage D C Current Gain F o r w a rd Voltage Drop R E S I S T IV E LOAD S t o ra g e Time F a l l Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time
I C = 100 mA
L = 25 mH
400
V
I C = 0.5 A IC = 1 A I C = 2.5 A I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 mA IC = 2 A If = 2 A V C C = 250 V I B 1 = 0.4 A T p = 30 s V C C = 200 V I B 1 = 0.4 A RBB = 0 ( s e e fig. 1)
I B = 0.1 A I B = 0.2 A I B = 0.5 A I B = 0.1 A I B = 0.2 A I B = 0.5 A VCE = 5 V VCE = 5 V IC = 2 A I B 2 = -0.4 A (see fig. 2) IC = 2 A V B E ( o f f ) = -5 V L = 200 H 10 8
0.7 1 1.5 1.1 1.2 1.3 40 2.5 2 0.2 0.6 0.1 2.9
V V V V V V
V B E (s at )
h FE Vf ts tf ts tf
V s s s s
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BULK128D-B
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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BULK128D-B
Inductive Fall Time Inductive Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
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BULK128D-B
Figure 1: Inductive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor
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BULK128D-B
SOT-82 MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F H H2 2.15 4.15 3.8 2.54 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.100 0.084 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16 MIN. 0.291 0.413 0.028 0.019 0.04 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.444 0.035 0.030 0.106 0.05 0.629
DIM.
C
A
F H
H2
c1 b b1
e e3
D
P032A
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B
BULK128D-B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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