ST13007
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s s
s s s
IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oC LARGE RBSOA
3 1 2
TO-220
APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES
s
DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l V CE V V CE O VEBO IC ICM IB IBM P tot Tstg Tj P a r am e t e r C o l le c t o r- E m i t te r Voltage (V B E = -1.5V) C o l le c t o r- E m i t te r Voltage (I B = 0) E m i t te r - B as e Voltage (I C = 0) C o l le c t o r Current C o l le c t o r Peak Current B a s e Current B a s e Peak Current T o t a l Dissipation at T c 25 o C S t o ra g e Temperature M a x . Operating Junction Temperature Va l u e 700 400 9 8 16 4 8 80 - 6 5 to 150 150 U ni t V V V A A A A W
o o
C C
July 1998
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THERMAL DATA
R t h j - c a se T h e r m al Resistance Junction-case Max 1.56
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE V IEBO P a r a m et e r C o l le c t o r Cut-off C u r re n t (V B E = -1.5V) E m i t t er Cut-off Current ( I C = 0) T e s t Conditions V C E = rated V C E V V C E = rated V C E V VEB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1A 2A 1A 400 1 2 3 3 1.2 1.6 1.5 16 26 5 3 30 40 30 4.5 350 1.6 60 2.3 110 2.5 110 s ns s ns s ns T c = 100 o C Min. Typ. M a x. 10 0.5 1 Unit A mA mA V V V V V V V V
V CE O ( s u s ) C o l le c t o r- E m i t te r S u s t ai n i ng Voltage V C E(s at ) C o l le c t o r- E m i t te r S a t u ra t i on Voltage
T c = 100 o C
V B E (s at )
B a s e -E m i t t er S a t u ra t i on Voltage D C Current Gain
IC = 2 A IC = 5 A IC = 5 A IC = 2 A G r o up A G r o up B IC = 5 A IC = 2 A I B 1 = 0.4 A t p = 30 s IC = 5 A IB1 = 1 A L = 200 H IC = 5 A IB1 = 1 A L = 200 H
I B = 0.4 A IB = 1 A IB = 1 A VCE = 5 V
T c = 100 o C
h FE
VCE = 5 V V C C = 300 V I B 2 = -0.4 A V C L = 250 V I B 2 = -2 A V C L = 250 V I B 2 = -2 A T c = 125 o C
ts tf ts tf ts
tf
R E S I S T IV E LOAD S t o ra g e Time F a l l Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time
* Pulsed: Pulse duration = 300 s, duty cycle 2 % Note : DC current gain pre-selected product (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
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TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
F1
D
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
F
G
H2
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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