SD2918
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
ADVANCE DATA
s s s s
GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 30 W MIN. WITH 18 dB GAIN @ 30 MHz
DESCRIPTION The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 200 MHz
M113 epoxy sealed ORDER CODE BRANDING SD2918 TSD2918
PIN CONNECTION
1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol V DG R VGS ID P DI S S Tj TSTG Parameter D r a i n - Ga te Voltage (R G S = 1 M) G a t e - S o u r c e Voltage D r a i n Current P o w e r Dissipation M a x . Operating Junction Temperature S t o r a g e Temperature Value 125 125 20 6 175 200 - 6 5 to 150
3.Gate 4. Source
U ni t V V V A W
o o
V ( B R ) D S S D r a i n Source Voltage
C C
THERMAL DATA
R t h ( j- c) R t h(c -s ) J u n c ti o n - C a s e Thermal Resistance C a s e -H e a t si n k Thermal Resistance 1 .0 0.30
o o
C/W C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
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SD2918
ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC
Symbol V (BR )DSS I DS S IGSS V GS ( Q) V DS ( O N) gFS CISS COSS CR SS V G S = 0V V G S = 0V V G S = 20V V D S = 10V V G S = 10V V D S = 10V V G S = 0V V G S = 0V V G S = 0V P a r a m e te r I D S = 10 mA V D S = 50 V V DS = 0 V I D = 10 mA I D = 2.5 A I D = 2.5 A V D S = 50 V V D S = 50 V V D S = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 0.8 58 35.5 7.5 1.0 Min. 125 1.0 1 5.0 5.0 Typ. Ma x. Unit V mA A V V mho pF pF pF
REF. 1022497C
DYNAMIC
Symbol P O UT GPS D f = 30MHz f = 30MHz f = 30MHz V D D = 50V V D D = 50V V D D = 50V V D D = 50V P a r a m e te r P i n = 0.475 W P o u t = 30 W P o u t = 30 W P o u t = 30 W I D Q = 100 mA I D Q = 100 mA I D Q = 100 mA I D Q = 100 mA Min. 30 18 50 30:1 22 55 Typ. Ma x. Unit W dB % VSWR
Load f = 30MHz M i s m a t c h A l l Angles
IMPEDANCE DATA
F R EQ . 3 0 MHz
Z I N () 2 4 . 4 - j 13.4
Z D L () 2 8 . 8 + j 7.2
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SD2918
TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage Maximum Thermal Resistance vs Case Temperature
Drain Current vs Gate Voltage
Gate-Source Voltages vs Case Temperature
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SD2918
TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power
Output Power vs Voltage Supply
Output Power vs Gate Voltage
Power Gain & Efficiency vs Output Power
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SD2918
30 MHz Test Circuit Schematic
VB
+
+50V
+
RF INPUT RF OUTPUT
REF. 7143542A
30 MHz Test Circuit Component Part List
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SD2918
30 MHz Test Circuit Photomaster
REF. 7143542A
30 MHz Production Test Fixture
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SD2918
M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA
mm MIN. A B C D E F G H I J K 6.22 3.05 5.59 19.81 18.29 24.64 9.40 0.10 2.16 4.06 TYP. MAX. 5.84 20.83 18.54 24.89 9.78 0.15 2.67 4.57 7.14 6.48 3.30 0.245 0.120 MIN. 0.220 0.780 0.720 0.970 0.370 0.004 0.085 0.160 inch TYP. MAX. 0.230 0.820 0.730 0.980 0.385 0.006 0.105 0.180 0.281 0.255 0.130
DIM.
Controlling Dimension: Inches
1010936D
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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