SD2932
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
· GOLD METALLIZATION · EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION, PUSH PULL · POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz
M244 epoxy sealed
DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz.
PIN CONNECTION
1 1
3 2 1. Drain 2. Gate 2
3
3. Source
ORDER CODES
Order Codes SD2932 Marking SD2932 Package M244 Packaging Plastic Tray
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol V(BR)DSS VDGR VGS ID PDISS Tj T STG Drain Source Voltage Drain-Gate Voltage (RGS = 1M) Gate-Source Volatge Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 125 125 20 40 500 +200 -65 to +150 Unit V V V A W C C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 0.35 REV. 5 July 2004 1/12 C/W
SD2932
ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC (Per Section)
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) G FS CISS COSS C RSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 100 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 10 A ID = 5 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 5 480 190 18 1.5 Min. 125 50 250 4 3 Typ. Max. Unit V A nA V V mho pF pF pF
DYNAMIC
Symbol POUT G PS D Load Mismatch VDD = 50 V VDD = 50 V VDD = 50 V Test Conditions IDQ = 500 mA IDQ = 500 mA POUT = 300 W IDQ = 500 mA POUT = 300 W f = 175 MHz f = 175 MHz f = 175 MHz f = 175 MHz Min. 300 15 50 5:1 16 60 Typ. Max. Unit W dB % VSWR
VDD = 50 V IDQ = 500 mA POUT = 300 W All Phase Angles
IMPEDANCE DATA
D
ZD L Typical Input Impedance Typical Drain Load Impedance
G Zin
S
FR E Q 175 MHz
ZIN () 0.92 - j 0.14
ZDL () 3.17 + j 4.34
Measured Gate to Gate and Drain to Drain, respectively.
2/12
SD2932
TYPICAL PERFORMANCE
Maximum Thermal Resistance vs. Case Temperature
Safe Operating Area
100
0.42
Rth(j-c) (C/W)
0.4
Ids, DRAIN CURRENT (A)
0.38
10
(1)
0.36
0.34 25 30 35 40 45 50 55 60 65 70 75 80 85
1 1 10 100 1000
Tc, CASE TEMPERATURE (C)
Vds, DRAIN SOURCE VOLTAGE (V)
(1) Current in this area may be limited by Rds(on) Two sides, each section equally loaded
Capacitance vs. Drain-Source Voltage
Drain Current vs. Gate Voltage
10000
20
ID, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
Vds=10 V
T=-20 C T=+25 C
15
1000
Ciss Coss
10
T=+80 C
100
5
Crss
10 0 10 20 30 40 50
0 2 2 .5 3 3 .5 4 4 .5 5 5 .5 6
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Gate Voltage vs. Case Temperature
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.15 1.1
Id=10 A Id=9 A Id=5 A Id=7 A
1.05
Id=11 A
1 0.95
Id=4 A
0.9
Id=2 A Id=.1 A
Id=1 A
0.85
Id=.25 A
0.8 -25 0 25 50 75 100
Tcase, CASE TEMPERATURE (C)
3/12
SD2932
TYPICAL PERFORMANCE (175 MHz)
Output Power vs. Input Power Output Power vs. Input Power
600
600
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
T=-20 C
500 400 300 200 100 0 0 2 4 6 8 10 12 14 16
Vdd=50V Idq=2 x 250mA F=175Mhz
Vdd=50 V
500 400
T=+25 C
Vdd=40 V
T=+80 C
300 200 100 0
Vdd=50V Idq=2 x 250mA F=175Mhz
18
20
22
0
2
4
6
8
10
12
14
16
18
20
22
Pin, INPUT POWER (W)
Pin, INPUT POWER(W)
Power Gain vs. Output Power
Efficiency vs. Output Power
18
80 70
Gp, POWER GAIN (dB)
17 16 15 14 13 12 11 10 0 100 200 300 400 500
Vdd=50V Idq=2 x 250mA F=175Mhz
Nc, EFFICIENCY (%)
60 50 40 30 20 10 0 100 200 300 400 500
Vdd=50V Idq=2 x 250mA F=175Mhz
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Output Power vs. Supply Voltage
Output Power vs. Gate Voltage
450 400 350 300 250 200 150 100 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Pin=3.9 W Pin=7.8 W Idq=2 x 250mA F=175Mhz
400
Pin=15.6 W
Pout, OUTPUT POWER (W)
T=+25 C
Pout,OUTPUT POWER (W)
300
T=-20 C T=+80 C
200
100
Vdd=50V Idq=2 x 250mA F=175Mhz
0 -3 -2 -1 0 1 2 3
Vdd,DRAIN VOLTAGE (V)
VGS, GATE_SOURCE VOLTAGE (V)
4/12
SD2932
175 MHz Test Circuit Schematic (Production Test Circuit)
NOTES: 1. DIMENSION AT COMPONENT SYMBOL ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINES IS + 0.002{0.05} - O.OOO[0.00] TYP
REF. 1022256B
175 MHz Test Circuit Component Part List
R1,R2,R5,R6 R3,R4 R7,R8 R9,R10 C1,C4 C2,C3,C7,C8,C17,C19,C20,C21 C5 C6 C9,C10 C11,C12, C13 C14,C15,C24,C25 C16,C18 C22,C23 C26,C27 C2 8 B1 B2 T1 T2 L1 FB1,FB5 FB2,FB6 FB3 FB4 PCB 470 Ohm 1 W, Surface Mount Chip Resistor 360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equivalent 560 Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead Resistor 20 K Ohm 3.09 W, 10 Turn Wirewound Precision Potentiometer 680 pF ATC 130B Surface Mount Ceramic Chip Capacitor 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor 75 pF ATC 100B Surface Mount Ceramic Chip Capacitor ST40 25 pF - 115 pF Miniature variable Trimmer 47 pF ATC 100B Surface Mount Ceramic Chip Capacitor 43 pF ATC 100B Surface Mount Ceramic Chip Capacitor 1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor 470 pF ATC 700B Surface Mount Ceramic Chip Capacitor 0.1 F / 500 V Surface Mount Ceramic Chip Capacitor 0.01 F / 500 V Surface Mount Ceramic Chip Capacitor 10 F / 63 Aluminum Eletrolytic Axial Lead Capacitor 50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] Flexible Coaxial Cable 4 Turns thru Fair-rite Bead 50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] Flexible Coaxial Cable R.F. Transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86] Flexible Coaxial Cable 2 Turns thru Fair-rite Multi-Aperture Core R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D. 0.141[3.58] L = 5.90[149.86] Inductor 1/4 Wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] Flexible Coaxial Cable 2 Turns thru Fair-rite Bead Shield Bead Multi-aperture Core Multilayer Ferrite Chip Bead (Surface Mount) Surface Mount Emi Shield Bead Woven Glass Reinforced PTFE Microwave Laminate 0.06", 1 oz EDCu, Both sides, r = 2.55 5/12
SD2932
175 MHz Test Circuit Photomaster
8.50 inches
175 MHz Test Fixture
6/12
4 inches
SD2932
TYPICAL BROADBAND DATA (175 - 230 MHz) Input Power vs. Frequency
Power Gain vs. Frequency
12
18
Pin , INPUT POWER (W)
10 8 6 4 2 160
Gp , POWER GAIN (dB)
17 16 15 14 13 12 11 10 160 170
Vdd = 50V Idq = 300 mA Pout = 250W
Vdd = 50V Idq = 300 mA Pout = 250W
180 190 200 210 220 230 240
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
FREQUENCY (MHz)
Efficiency vs. Frequency
Return Loss vs. Frequency
Nd , DRAIN EFFICIENCY (%)
80 75 70 65 60 55 50 45 160 170 180 190 200 210 220 230 240
0
RTL , RETURN LOSS (dB)
Vdd = 50V Idq = 300 mA Pout = 250W
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20 160
Vdd = 50V Idq = 300 mA Pout = 250W
170 180 190 200 210 220 230 240
FREQUENCY (MHz)
FREQUENCY (MHz)
1 dB Compression Point vs. Frequency
P1dB , 1dB COMPRESSION (W)
350
325
300
275
Vdd = 50V Idq = 300 mA
170 180 190 200 210 220 230 240
250 160
FREQUENCY (MHz)
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SD2932
175 - 230 MHz Test Circuit Layout (Engineering Fixture)
175 - 230 MHz Circuit Layout Component Part List
PCB T1 T2,T3 T4,T5 C1 C2,C3 C4 C5 C6,C11 C7 C8,C9,C13 C1 0 C1 2 C14 R1,R3 R2 R4 R5 R6 D1 L1 L2 L3 L4 L5 1/32" Woven Fiberglass 0.030 Cu, sides, r = 4.8 50 Ohm Flexible Coax Cable OD 0.06", 3" Long. Ferrite Core NEOSIDE 9:1Transformer, 16.5 Ohm Flexible Coax Cable 0.1", 3" Long 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.06", 5" Long 8.2 pF Ceramic Cap 100 pF Ceramic Cap 2 - 18 pF Chip Cap 47 pF Ceramic Cap 47 nF Ceramic CAp 56 pF ATC Chip Cap 470 pF ATC Chip Cap 100 nF Ceramic Cap 2 x 330 nF / 50 V Cap 10 nF / 63 V Electrolityc Cap 47 Ohm Resistor 6.8 K Ohm Chip Resistor 4.7 K Ohm Multi Turns Trim Resistor 8.2 K Ohm / 5 W Resistor 3.3 K Ohm / 5 W Resistor 6.8 V Zener Diode 20 nH Inductor 70 nH Inductor 30 nH Inductor 10 nH Inductor 15 nH Inductor
8/12
SD2932
TYPICAL BROADBAND DATA (88 -108 MHz) Input Power vs. Frequency
Power Gain vs. Frequency
4
22
Pin , INPUT POWER (W)
3.5
Vdd = 50V Idq = 200 mA Pout = 300W
Gp , POWER GAIN (dB)
21 20 19 18 17 16
3
Vdd = 50V Idq = 200 mA Pout = 300W
2.5 85 90 95 100 105 110
85
90
95
100
105
110
FREQUENCY (MHz)
FREQUENCY (MHz)
Efficiency vs. Frequency
Return Loss vs. Frequency
80 76 74 72 70 68 66 64 62 60 85 90 95 100 105 110
0
RTL , RETURN LOSS (dB)
78
Nd , EFFICIENCY (%)
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20 85 90 95 100 105 110
Vdd = 50V Idq = 200 mA Pout = 300W
Vdd = 50V Idq = 200 mA Pout = 300W
FREQUENCY (MHz)
FREQUENCY (MHz)
2nd Harmonic vs. Frequency (88 - 108 MHz)
3rd Harmonic vs. Frequency (88 - 108 MHz
-10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 85 90 95 100
Vdd = 50V Idq = 200 mA Pout = 300W
-10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 85 90 95 100
H2 , 2nd HARMONIC (dBc)
H3 , 3rd HARMONIC (dBc)
Vdd = 50V Idq = 200 mA Pout = 300W
105
110
105
110
FREQUENCY (MHz)
FREQUENCY (MHz)
9/12
SD2932
88 - 108 MHz Test Circuit Layout (Engineering Fixture)
88 - 108 MHz Circuit Layout Component Part List
PCB T1 T2,T3 T4,T5 T6 FB 1 C1 C2,C3,C4,C7,C8 C5,C6 C9 C1 0 C11 R1 R2 ,R 4 R3 R5 R6 R7 R8 D1 L1 L2 L3 1/32" Woven FiberGlass 0.030 Cu, 2 sides, r = 4.8 50 Ohm Flexible Coax Cable OD 0.06", 5" Long 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1", 3.9". Ferrite Core NEOSIDE 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1", 5" Long 50 Ohm Flexible Coax Cable OD 0.1", 5" Long vk200 10 pF Ceramic Cap 1 nF Chip Cap 1 nF ATC Chip Cap 470 pF ATC Chip Cap 100 nF Chip Cap 100 mF / 63 V Electrolityc Cap 56 Ohm Resistor 10 Ohm Chip Resistor 10 K Ohm Resistor 5.6 Ohm Resistor 10 K Ohm, 10 Turn Trim Resistor 3.3 K Ohm / 5 W Resistor 15 Ohm / 5 W Resistor 6.6 V Zener Diode 10 nH Inductor 40 nH Inductor 70 nH Inductor
10/12
SD2932 M244 (.400 x .860 4/L BAL N/HERM W/FLG) MECHANICAL DATA
mm Inch M AX 5.84 5.08 3.02 9.65 19.81 10.92 27.94 33.91 0.10 1.52 2.59 4.83 10.03 21.59 34.16 0.15 1.78 2.84 5.84 10.34 22.10 1.335 0.004 0.060 0.102 0.190 0.395 0.850 3.28 9.91 20.82 11.18 0.119 0.380 0.780 0.430 1.100 1.345 0.006 0.070 0.112 0.230 0.407 0.870 MIN. 0.220 0.200 0.129 0.390 0.820 0.440 TYP. M AX 0.230
DIM.
A B C D E F G H I J K L M N
MIN. 5.59
TYP.
Controlling Dimension: Inches
1020876B
11/12
SD2932
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