STW45NM50FD
N-channel 500V - 0.07 - 45A - TO247 FDmeshTM Power MOSFET (with fast diode)
General features
Type STW45NM50FD
VDSS 500V
RDS(on) <0.1
ID 45A
100% avalanche tested High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields
TO -247
Description
The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STW45NM 50FD M arking W4 5 N M 5 0 F D Package TO-247 Packaging Tube
April 2006
Rev 9
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Contents
STW 45NM50FD
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW45NM50FD
Electrical ratings
1
Electrical ratings
Table 1.
S y mb o l VDS VDGR VGS ID ID IDM
(1 )
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (R GS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at T C = 25C Derating factor Value 500 500 30 45 28.4 180 417 2.08 20 -65 to 150 Uni t V V V A A A W W/C V/ns C
PTOT dv/dt(2) TJ Tstg
Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD 45A, di/dt 400A/s, VD D =80%V(BR)DSS
Table 2.
S y mb o l
Thermal resistance
Parameter Value 0.3 30 300 Uni t C/W C/W C
R thj-case Thermal resistance junction-case Max Rthj-a Tl Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 22.5 800 Unit A mJ
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Electrical characteristics
STW 45NM50FD
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
S y mb o l V(BR)DSS IDSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) G ate body leakage current (VDS = 0) G ate threshold voltage Static drain-source on resistance Test condictions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 30V VDS= V GS, ID = 250A VGS= 10V, ID= 22.5A 3 4 0.07 Min. 500 10 100
100
Typ.
Ma x .
Unit V A A nA V
IGSS VGS(th) RDS(on)
5 0.10
Table 5.
S y mb o l gfs (1) Ciss Coss C rss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test condictions VDS >ID(on) x R DS(on)max ID = 22.5A VDS =25V, f=1 MHz, VGS=0 Mi n . Typ. 20 3600 1260 80 350 92 22 40 120 M ax. Un i t S pF pF pF pF nC nC nC
Coss eq.(2) Equivalent output capacitance Qg Qg s Qg d RG Total gate charge Gate-source charge Gate-drain charge
VGS=0, VDS =0V to 400V VDD =400V, ID = 45A VGS =10V (see Figure 13) f=1 MHz Gate DC Bias= 0 test signal level = 20mV open drain
Gate input resistance
2
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Cos s eq . is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STW45NM50FD Table 6.
S y mb o l td(on) tr tr(Voff) tf tc
Electrical characteristics Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test condictions VDD =250 V, ID= 22.5A, RG=4.7, VGS=10V (see Figure 14) VDD =400 V, ID= 45A, RG=4.7, VGS=10V (see Figure 14) M in. Typ. 28 28 11 25 44 M ax. Unit ns ns ns ns ns
Table 7.
S y mb o l ISD ISDM(1) VSD(2) t rr Q rr IRRM t rr Q rr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=45A, VGS=0 ISD=45A, Tj=25C di/dt = 100A/s, VDD=100V, (see Figure 17) ISD=45A, Tj=150C di/dt = 100A/s, VDD=100V, (see Figure 17) 200 1600 16 324 4017 24.8 Test condictions Min Typ. Ma x U n i t 45 180 1. 5 A A V ns nC A ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STW 45NM50FD
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STW45NM50FD Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STW 45NM50FD
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STW45NM50FD
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STW 45NM50FD
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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STW45NM50FD
Revision history
5
Revision history
Table 8.
Dat e 05-Apr-2005 26-Apr-2006
Revision history
Revision 8 9 Changes Modified value on Table 7.: Source drain diode New template
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STW45NM50FD
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