Datasheets | Transistors | Transistors, Power Bipolar | Very High Voltage

High voltage fast-switching NPN power transistor

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Last Updated: 21/01/2008

Pages: 6

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Generic Part Number

Orderable Part Number

Status

BUL1603ED

Active

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BUL1603ED
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PRELIMINARY DATA

s

s

s s s

s s

INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220

3 1 2

s

APPLICATIONS TWO LAMPS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING 277 VAC IN PUSH-PULL CONFIGURATION DESCRIPTION The BUL1603ED is a new device designed for fluorescent electronic ballast 277 VAC push-pull applications. This device can be used without baker clamp and transil protection, reducing greatly the component count.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CE S V CE S V CE O VEBO IC ICM IB IBM Ptot Tstg Tj Parameter C o l l e c t o r- E m i tt e r Voltage ( V B E = 0; I C E S = 10 mA; ) C o l l e c t o r- E m i tt e r Voltage (V B E = 0; I C E S = 100 A; ) C o l l e c t o r- E m i tt e r Voltage (I B = 0) E m i t te r- B a s e Voltage (I C = 0) C o l l e c t o r Current C o l l e c t o r Peak Current (t p <5 ms) B a s e Current B a s e Peak Current (t p <5 ms) T o t a l Dissipation at T c = 25 o C S t o r a g e Temperature M a x . Operating Junction Temperature Value 1600 1550 650 11 3 6 2 4 80 - 6 5 to 150 150 U ni t V V V V A A A A W o C o C

September 2002

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BUL1603ED
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m a l Resistance Junction-Case T h e r m a l Resistance Junction-Ambient Max Max 1 .5 6 62.5
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S IEBO V (BR )CES Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = 0) E m i t t e r Cut-off Current ( I C = 0) C o l l e c t o r- E m i t te r B r e a k d o w n Voltage ( V B E = 0) T e s t Conditions V C E = 1550 V VEB = 9 V I C = 10 mA I C = 100 A I C = 100 mA L = 25 mH 1600 1550 650 Min. Typ. Ma x. 10 0 10 0 Unit A A V V V

V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) V (BR )EBO E m i t t e r- B a s e B r e a k d o w n Voltage ( I C = 0) C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage D C Current Gain

I E = 10 mA

11

18

V

V C E(s at ) V B E (s at ) hFE

IC = 1 A I C = 0.25 A IC = 1 A I C = 5 mA I C = 0.4 A IC = 1 A I C = 0.5 A I B 1 = 0.05 A D . C . = 2% ( s e e figure 1) L = 2 mH V C C = 50 V ( s e e figure 2)

I B = 0.25 A I B = 0.025 A I B = 0.25 A V C E = 10 V V CE = 3 V V C E = 1.5 V V C C = 125 V I B 2 = -0.25 A P.W. = 300 s C = 1.8 nF V B E = -5 V 6 18 15 4

1.5 1.5 1.2

V V V

40

td tr ts tf Ear

R E S I S T IV E LOAD D e l a y Time R i s e Time S t o r a g e Time F a l l Time R e p e ti t i v e Avalanche Energy

0.3 0.8 1.2 0.35

s s s s mJ

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

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BUL1603ED
Safe Operating Area Derating Curve

Output Characteristics

DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

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BUL1603ED
Base Emitter Saturation Voltage

Figure 1: Resistive Load Switching Test Circuit

1 ) Fast electronic switch 2 ) Non-inductive Resistor

Figure 2: Energy Rating Test Circuit

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BUL1603ED

TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409

P011CI
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BUL1603ED

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