STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z
N-channel 600V - 13 - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESHTM Power MOSFET
Features
Type STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z
VDSS 600V 600V 600V
RDS(on) <15 <15 <15
ID 0.8A 0.3A 0.3A
Pw 25W 3W 3.3W
2
TO-92 (Ammopak)
100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability New high voltage benchmark
1
2
3
2 1
3
SOT-223
TO-251(IPAK)
Description
Figure 1. The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Internal schematic diagram
Application
Switching applications
Table 1.
Device summary
Marking D1LNK60Z 1NK60ZR 1NK60Z Package TO-251(IPAK) TO-92 SOT-223 Packaging Tube Ammopak Tape & reel
Order codes STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z
July 2007
Rev 11
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www.st.com 16
Contents
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Value Parameter IPAK Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 0.8 0.5 3.2 25 0.24 3 0.25 800 4.5 -55 to 150 TO-92 600 30 0.3 0.189 1.2 3.3 0.26 0.3 SOT-223 V V A A A W W/C V V/ns C Unit
PTOT
VESD(G-D) dv/dt(2) TJ Tstg
Gate source ESD(HBM-C=100pF, R=1.5K) Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD 0.3A, di/dt 200A/s, VDD =80%V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-a Rthj-lead Tl
Thermal resistance
Value Parameter IPAK Thermal resistance junction-case Max Thermal resistance junction-ambient Max Thermal resistance junction-lead Max Maximum lead temperature for soldering purpose 5 100 -275 TO-92 -120 40 260 SOT-223 -37.87(1) -C/W C/W C/W C Unit
1. When mounted on 1 inch˛ FR-4 board, 2 Oz Cu
Table 4.
Symbol IAR EAS
Avalanche data
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (star ting Tj=25C, Id=Iar, Vdd=50V) Value 0.8 60 Unit A mJ
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Electrical characteristics
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 50A VGS= 10V, ID= 0.4A 3 3.75 13 Min. 600 1 50
10
Typ.
Max.
Unit V A A A V
4.5 15
Table 6.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 0.4A Min. Typ. 0.5 94 17.6 2.8 11 4.9 1 2.7 6.9 Max. Unit S pF pF pF pF nC nC nC
VDS =25V, f=1 MHz, VGS=0
Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge
VGS=0, VDS =0V to 480V VDD=480V, ID = 0.8A VGS =10V (see Figure 21)
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=300 V, ID= 0.4A, RG=4.7, VGS=10V (see Figure 20) Min. Typ. 5.5 5 13 28 Max. Unit ns ns ns ns
Table 8.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=0.8A, VGS=0 ISD=0.8A, di/dt = 100A/s, VDD=20V, Tj=25C ISD=0.8A, di/dt = 100A/s, VDD=20V, Tj=150C 135 216 3.2 140 224 3.2 Test conditions Min Typ. Max 0.8 2.4 1.6 Unit A A V ns nC A ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 9.
Symbol BVGSO(1)
1.
Gate-source zener diode
Parameter Gate-source breakdown voltage Test conditions Igs=1mA (open drain) Min. 30 Typ. Max. Unit V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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Electrical characteristics
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for IPAK Figure 3. Thermal impedance for IPAK
Figure 4.
Safe operating area for TO-92
Figure 5.
Thermal impedance for TO-92
Figure 6.
Safe operating area for SOT-223
Figure 7.
Thermal impedance for SOT-223
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Figure 8. Output characteristics Figure 9.
Electrical characteristics Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Figure 15. Normalized on resistance vs temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Normalized BVDSS vs temperature
Figure 18. Maximum avalanche energy vs temperature
Figure 19. Max Id Current vs Tc
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Test circuit
3
Test circuit
Figure 21. Gate charge test circuit
Figure 20. Switching times test circuit for resistive load
Figure 22. Test circuit for inductive load Figure 23. Unclamped inductive load test switching and diode recovery times circuit
Figure 24. Unclamped inductive waveform
Figure 25. Switching time waveform
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Package mechanical data
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Package mechanical data
TO-92 MECHANICAL DATA
mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch
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Package mechanical data
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
TO-92 AMMOPACK
mm. MIN. 4.45 3.30 TYP MAX. 4.95 3.94 1.6 2.3 0.41 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.56 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0 .11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.016 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. 0.170 0.130 inch TY P . MAX. 0.194 0.155 0 .06 0 .09 0.022 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43
DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
C A C2
L2
D
B3 B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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Package mechanical data
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
SOT-223 MECHANICAL DATA
mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8
DIM.
L
l2
e1
a b f
d c e4
C
l1
B
C
E
g
P008B
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Revision history
5
Revision history
Table 10.
Date 19-Mar-2003 15-May-2003 09-Jun-2003 17-Nov-2004 15-Feb-2005 07-Sep-2005 22-Feb-2006 01-Jun-2007 19-Jul-2007
Revision history
Revision 3 4 5 6 7 8 9 10 11 First electronic version Removed DPAK Final datasheet Inser ted SOT-223 Modified Figure 4. Inser ted ecopack indication The document has been reformatted Order code table on first page has been updated Table 1.: Device summary has been updated Changes
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STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
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