STP62NS04Z
N-channel clamped 12.5m - 62A - TO-220 Fully protected MESH OVERLAYTM Power MOSFET
General features
Type STP62NS04Z
VDSS (@Tjmax) Clamped
RDS(on) <0.015
ID 62A
100% avalanche tested Low capacitance and gate charge 175 C maximum junction temperature
TO-220
1 2
3
Description
This fully clamped MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP62NS04Z Marking P62NS04Z Package TO-220 Packaging Tube
October 2006
Rev 5
1/12
www.st.com 12
Contents
STP62NS04Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP62NS04Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDG IGS IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain gate current (continuous) Gate sourcecurrent (continuous) Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value Clamped Clamped 62 37.5 50 50 248 110 0.74 8 500 8 -55 to 175 A W W/C V/ns mJ V C Unit V V A A
PTOT
(2) (3)
dv/dt EAS
Peak diode recovery voltage slope Single Pulse Avalanche Energy ESD (HBM - C = 100pF, R = 1.5 k) Operating junction temperature Storage temperature
VESD TJ Tstg
1. Pulse width limited by safe operating area 2. ISD 40A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting TJ = 25 oC, ID = 20A, VDD = 20V
Table 2.
Symbol RthJC RthJA Tl
Thermal data
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1.36 62.5 300 Unit C/W C/W C
3/12
Electrical characteristics
STP62NS04Z
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate-Source Breakdown Voltage Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = 16V VGS = 10V IGS = 100 A VDS = VGS, ID = 250A VGS = 10V, ID = 30A 18 2 12.5 4 15 Min. 33 10 10 Typ. Max. Unit V A A V V m
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 30A VDS =25V, f = 1 MHz, VGS = 0 Min. Typ. 20 1330 420 135 34 10 11.5 47 Max. Unit S pF pF pF nC nC nC
VDD = 20V, ID = 40A VGS =10V
1. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 5.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD= 20V, ID= 20A, RG=4.7, VGS = 10V Figure 13 on page 8 Vclamp = 30V, ID = 40A RG = 4.7, VGS = 10V Figure 13 on page 8 Min. Typ. 13 104 41 42 30 54 90 Max. Unit ns ns ns ns ns ns ns
4/12
STP62NS04Z
Electrical characteristics
Table 6.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 62A, VGS = 0 ISD = 40A, di/dt = 100A/s, VDD = 20V, TJ = 150C Figure 15 on page 8 45 65 2.9 Test conditions Min Typ. Max 62 248 1.5 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
5/12
Electrical characteristics
STP62NS04Z
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/12
STP62NS04Z Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
7/12
Test circuit
STP62NS04Z
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
8/12
STP62NS04Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STP62NS04Z
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
10/12
STP62NS04Z
Revision history
5
Revision history
Table 7.
Date 21-Jun-2004 22-Aug-2005 21-Jan-2006 02-Oct-2006
Revision history
Revision 2 3 4 5 Preliminary datasheet Complete document with curves New ECOPAK label New template, no content change Changes
11/12
STP62NS04Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
12/12
|
