STW29NK50ZD
N-CHANNEL 500 V - 0.095 - 29A TO-247 Fast Diode SuperMESHTM MOSFET
Table 1: General Features
TYPE STW29NK50ZD
Figure 1: Package
ID 29 A PW 350 W
VDSS 500 V
RDS(on) < 0.13
TYPICAL RDS(on) = 0.095 HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY TIME
3 2 1
TO- 2 4 7
DESCRIPTION The Fast SuperMeshTM series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the "FDmeshTM" Advanced Technology.
Figure 2: Internal Schematic Diagram
APPLICATIONS HID BALLAST ZVS PHASE-SHIFT FULL BRIDGE
Table 2: Order Codes
PART NUMBER STW29NK50ZD MAR K ING W29NK50ZD PACKAGE TO-247 PACKAGING TUBE
Rev. 3 July 2005 1/10
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Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 K) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 K) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 500 500 30 29 18.27 116 350 2.77 6000 4.5 -55 to 150 Unit V V V A A A W W/C V V/ns C
(*) Pulse width limited by safe operating area (1) ISD 29 A, di/dt 200 A/s, VDD 400V
Table 4: Thermal Data
Rthj-case Rth j -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.36 50 300 C/W C/W C
Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 29 500 Unit A mJ
Table 6: Gate-Source Zener Diode
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Condition Min. 30 Typ. Max Unit A
Igs= 1mA (Open Drain)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) On /Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 20 V VDS = VGS, ID = 150 A VGS = 10 V, ID = 14.5 A 3 3.75 0.095 Mi n. 500 1 50 10 4.5 0.13 Typ. Max. Unit S A A A V
Table 8: Dynamic
Symbol gfs (1) Ciss Coss C rs s td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 14.5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 28 6450 710 165 45 43 133 25 180 33 108 200 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 400 V, ID = 14.5 A, RG = 4.7 , VGS = 10 V (d see Figure 17) VDD = 480 V, ID = 14.5 A, VGS = 10 V
Table 9: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 29 A, VGS = 0 ISD = 29 A, di/dt = 100 A/s VDD = 30V, Tj = 25C (see Figure 18) ISD = 29 A, di/dt = 100 A/s VDD = 30V, Tj = 150C (see Figure 18) 264 2.08 15.7 395 4.164 21.1 Test Conditions Min. Typ. Max. 29 116 1.6 Unit A A V ns C A ns C A
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area.
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Figure 3: Safe Operating Area Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Normalized On Resistance vs Temp e rat u re
Figure 11: Source-Drain Diode Forward Characteristics
Figure 14: Normalized BVdss vs Temperature
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Figure 15: Avalanche Energy vs Starting Tj
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Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Wafeform
Figure 17: Switching Times Test Circuit For Resistive Load
Figure 20: Gate Charge Test Circuit
Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times
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TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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Table 10: Revision History
Date 05-Feb-2004 06-Dec-2004 20-Jul-2005 Revision 1 2 3 Description of Changes First Release. Some electrical value changed Complete version
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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