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Processes Evolution
Technology node 0.18µm HCMOS8 0.13µm HCMOS9 90nm CMOS090
Core Voltage 1.8V 1.2V 1.0V/1.2V
I/O Voltage 3.3V 2.5V/3.3V 2.5V/3.3V
Gate Oxide (Core) 3.2nm 1.7nm/2.0nm 1.6nm/2.2nm
Gate Oxide (I/O, analog) 6.5nm 5.0nm/6.5nm 5.0nm/6.5nm
Physical Gate 0.17µm 0.11µm 65nm
Interconnect Al Cu Cu
ILD k=3.5 K=3.5 k=3
Number of Metal layers 6 6 to 8 6 to 9
Metal pitch 0.64 0.41 0.28
Gate density (k/mm) 85 / 100 (shrink) 200 430 (hi density)
350 (hi speed)
 

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