Main available components and process basic features |
| Status |
Production |
Production |
Production |
| Process |
BICMOS6G |
BICMOS7RF |
BICMOS9 |
| |
Si-Ge process |
Si-Ge:C
process |
Si-Ge:C
process |
| CMOS min drawn
length (µm) |
0.35 |
0.25 |
0.13/0.25 |
| CMOS nominal supply
(V) |
3.3 |
2.5 |
1.2/2.5 |
| Digital density
100% (KGate/mm²) |
18 |
40 |
180/90 |
High speed NPN
FT (GHz) @ VCE (V)
BVCE0 (V) |
45 @ 1.5
3.0 |
70 @ 1.5
2.6 |
150 @ 1.5
1.7 |
High Speed PNP
FT (GHz) @ VCE (V)
BVCE0 (V) |
4 @ -1.5
-10 |
6.5 @ -1.5
-10 |
NA
NA |
HV MOS
VDMAX (V) |
6 |
15 |
6 |
MIM Capacitor
(fFd/µm2) |
5 |
5 |
5 |
High Poly Resistor
(ohms/sq) |
1 |
1 |
1 |
| Non
Volatile Device |
No |
No |
Yes |
| Metal
layers |
5 |
5 |
6 - 8 |
| Standard
cells |
384 |
670 |
1480 |
| IOs |
|
32 |
488 |
|
| |
| Status |
Production |
Preliminary |
Production |
| Process |
HCMOS7A |
HCMOS9A |
HF7CMOS |
| CMOS min drawn
length (µm) |
0.5/0.6 |
0.13/0.6 |
0.25/0.5/0.6 |
| CMOS nominal supply
(V) |
3.3/5.0 |
1.2/4.3 |
2.5/3.3/5.0 |
| Digital density
100% (KGate/mm²) |
27/27 |
120/60 |
40/27/27 |
High speed NPN
FT (GHz) @ VCE (V)
BVCE0 (V) |
None |
None |
7.5 @ IC0=9mA
9 |
High Speed PNP
FT (GHz) @ VCE (V)
BVCE0 (V) |
None |
None |
1
-25 |
HV MOS
VDMAX (V) |
20 |
20 |
25 |
MIM Capacitor
(fFd/µm2) |
5 |
5 |
5 |
High Poly Resistor
(ohms/sq) |
1 |
6 |
6 |
| Non
Volatile Device |
Yes |
Yes |
Yes |
| Metal
layers |
4 |
4 |
5 |
| Standard
cells |
550 |
TBD |
643 |
| IOs |
|
TBD |
100 |
|
| |
|
|
|
