ST’s ESBTs consist of a high-voltage power bipolar transistor connected in cascade with a low-voltage power MOSFET, and are ideal for high-efficiency fast switching applications such as 3-phase auxiliary power supplies. They are available with collector-source voltage ranging from 1700 V up to 2200 V.
Key features include:
- Very low equivalent on-resistance to minimize conduction losses
- Very low switching times for efficient operation over 100 kHz
- Squared RBSOA to sustain accidental overloads