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STH180N10F3-2

N-channel 100 V, 3.9 mOhm, 180 A STripFET(TM)III Power MOSFET H2PAK-2
  • active Active

This device is an N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.

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Errata Sheet
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Datasheet

Key Features

  • Ultra low on-resistance
  • 100% avalanche tested

Design Resources

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Technical Documentation

Product Specifications

Description Version Size
pdf
DS7317: N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET™III Power MOSFET
1.1 952 KB

Application Notes

Description Version Size
pdf
AN4191: Power MOSFET: Rg impact on applications
1.0 1,489 KB

User Manual

Description Version Size
pdf
UM1575: Spice model tutorial for Power MOSFETs
1.2 1,550 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

Description Version Size
zip
STH180N10F3-2 PSpice model
1.0 10 KB

Publications and Collaterals

Brochure

Description Version Size
pdf
Products and solutions for solar energy
1.0.0 1,318 KB

Sample & Buy

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Part Number Marketing StatusPackagePacking TypeAutomotive GradeOrder From STUnit Price (US$)*
@ 1000
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
STH180N10F3-2ActiveH2PAK-2Tape And Reel_-2.997Distributor reported inventory date: 2014-11-27
Distributor NameRegionStockMin. order
Farnell Element14Order NowEUROPE3981
RS COMPONENTSOrder NowEUROPE3021
DIGIKEYOrder NowWORLDWIDE25701
Ecopack1PDF
XML

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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