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N-channel 600 V, 0.53 Ohm, 10 A, DPAK MDmesh(TM) II Power MOSFET
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These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

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Errata Sheet
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Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Design Resources


Technical Documentation

Product Specifications

Description Version Size
DS6294: N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, I²PAK, TO-220 and IPAK packages
7.0 1,257 KB

Application Notes

Description Version Size
AN1703: Guidelines for using ST's MOSFET smd Packages
1.3 777 KB

Technical Notes & Articles

Description Version Size
TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
1.0 658 KB

User Manual

Description Version Size
UM1575: Spice model tutorial for Power MOSFETs
1.2 1,550 KB

Sample & Buy

Part Number Marketing StatusPackagePacking TypeAutomotive GradeOrder From STUnit Price (US$)*
@ 1000
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
STD10NM60NActiveDPAKTape And Reel_-1.1Distributor reported inventory date: 2014-10-21
Distributor NameRegionStockMin. order
ARROWOrder NowAMERICA16582500
Farnell Element14Order NowEUROPE2701
Ecopack2 (**)PDF

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
(**) The Material Declaration forms available on may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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