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MDmesh DM2 series

The MDmesh DM2 MOSFETs are ST’s latest fast recovery diode series optimized for full-bridge phase-shifted ZVS topologies. These 400 – 650 V MOSFETs feature a very low recovery charge and time (Qrr, trr) and show 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40 V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines.

Key features and benefits:

  • Improved intrinsic diode reverse recovery time (Trr) for increase efficiency
  • Higher dV/dt capability for improved system reliability
  • AEC-Q101-qualified 400 V, 500 V, 600 V and 650 V MOSFETs

400 - 650 V AEC-Q101-qualified MOSFETs

ST has extended its offering of MDmesh DM2 fast recovery diode MOSFET series with a range of AEC-Q101-qualified devices. This includes the industry’s first AEC-Q101-qualified 400 V and 500 V MOSFETs as well as 600 V and 650 V devices featuring an improved performance compared to existing devices in the same voltage class. The AEC-Q101-qualified MDmesh DM2 MOSFETs offer the best performance in terms of Trr / Qrr and offer a softer commutation behavior. Furthermore, they are among the best in terms of turn-off energy (Eoff) at high currents. 
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