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IGBTs

With breakdown voltages ranging from 350 V to 1300 V, ST’s IGBTs feature the optimal trade-off between switching performance and on-state behavior due to their proprietary technology, delivering greater all-around energy-efficient system designs in applications such as motor control, photovoltaic, UPS, automotive, induction heating, welding, lighting and others.

Some of the highlights of our IGBT portfolio are as follows:

  • Low VCE(SAT) for reduced conduction losses
  • Improved switch-off energy spread versus increasing temperature resulting in reduced switching losses
  • Tight parameter distribution for design simplification and easy paralleling
  • Co-packaged tailored anti-parallel diode option for improved power dissipation and best thermal management

These IGBTs are based on both standard punch-through technology, ideal for white goods, and the newly introduced trench-gate field-stop technology which enables extremely fast turn-off times with minimal tail currents, stable behavior over temperature, and a low VCE(SAT) that, coupled with the positive derating with temperature, improves the applications’ efficiency.

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