STRH100N10
Rad-Hard N-Channel 100V - 10A MOSFET-
Active
This N-channel Power MOSFET is developed with STMicroelectronics unique STripFETâ„¢ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified.
Key Features
- Fast switching
- 100% avalanche tested
- Hermetic package
- 70 krad TID
- SEE radiation hardened
Design Resources
TopTechnical Documentation
Product Specifications
| Description | Version | Size |
|---|---|---|
|
DS6829: Rad-Hard 100 V, 48 A N-channel Power MOSFET
|
6.0 | 469 KB |
HW Model & CAD Libraries
HW Model & CAD Libraries
| Description | Version | Size |
|---|---|---|
|
STRH100N10 beginning of life PSpice model (.lib)
|
1.0 | 1 KB |
Sample & Buy
Top| Part Number | SMD PIN/Detailed Spec | Quality Level | EPPL | Hi-Rel Package | Lead Finish | Packing Type | Order From ST | Unit Price (US$)* @ | Distributor Availability | RoHS Compliance Grade | Download Material Declaration** |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STRH100N10HY1 | - | Engineering Model | TO-254AA | Gold | Carrier Tape | - | No data reported, please contact our Distributors | Not compliant | - | |||
| STRH100N10HYG | 5205/021/01 | ESCC Flight | TO-254AA | Solder Dip | Carrier Tape | - | No data reported, please contact our Distributors | Not compliant | - | |||
| STRH100N10HYT | 5205/021/02 | ESCC Flight | No | TO-254AA | Solder Dip | - | No data reported, please contact our Distributors | - | ||||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors (**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices. |
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