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STRH100N10

Rad-Hard N-Channel 100V - 48A MOSFET
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This N-channel Power MOSFET is developed with STMicroelectronics unique STripFETâ„¢ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified.

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Errata Sheet
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Datasheet

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 70 krad TID
  • SEE radiation hardened

Design Resources

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Technical Documentation

Product Specifications

Description Version Size
pdf
DS6829: Rad-Hard 100 V, 48 A N-channel Power MOSFET
8.0 629 KB

Technical Notes & Articles

Description Version Size
pdf
TN1181: Engineering Model quality level
1.1 142 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

Description Version Size
zip
STRH100N10 beginning of life PSpice model (.lib)
1.0 1 KB

Sample & Buy

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Part Number Marketing StatusSMD PIN/Detailed SpecQuality LevelEPPLHi-Rel PackageLead FinishPacking TypePackage: Product MarkingMass
STRH100N10HY1Active-Engineering ModelTO-254AAGoldCarrier TapeSTRH100N10HY1+ BeO10
STRH100N10HYGActive5205/021/01ESCC FlightYesTO-254AAGoldCarrier Tape520502101F + BeO10
STRH100N10HYTPreview5205/021/02ESCC FlightTO-254AASolder DipCarrier Tape520502102F + BeO10

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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