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Rad-Hard N-Channel 100V - 6A MOSFET
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This N-channel Power MOSFET is developed with STMicroelectronics unique STripFETprocess. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified.

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Errata Sheet
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Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 70 krad TID
  • SEE radiation hardened

Design Resources


Technical Documentation

Product Specifications

Description Version Size
DS7120: Rad-Hard 100 V, 6 A N-channel Power MOSFET
6.0 798 KB

Technical Notes & Articles

Description Version Size
TN1181: Engineering Model quality level
1.1 142 KB
TN1188: Chip storage and handling for aerospace products with silver backside
2.0 332 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

Description Version Size
STRH8N10 beginning of life PSpice model (.lib)
2.0 1 KB

Sample & Buy

Part Number Marketing StatusSMD PIN/Detailed SpecQuality LevelEPPLHi-Rel PackageLead FinishPacking TypePackage: Product MarkingMass
STRH8N10S1Active-Engineering ModelSMD.5GoldCarrier Tape
STRH8N10SGActive5205/023/01ESCC FlightSMD.5GoldCarrier Tape

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
(**) The Material Declaration forms available on may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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